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Chinese Physics Letters

Controlling the Goos–Hänchen Shift via Incoherent Pumping Field and Electron Tunneling in the Triple Coupled InGaAs/GaAs Quantum Dots

Rajab Nasehi, Seyyed Hossein Asadpour, HAMID RAHIMPOUR SOLEIMANI, Mohammad Mahmoudi

Published Jan 1, 2016• 13 citations
Publisher

Abstract

We study the controlling of the Goos-Hänchen (GH) shifts in reflected and transmitted light beams in the triple coupled InGaAs/GaAs quantum dot (QD) nanostructures with electron tunneling and incoherent pumping field. It is shown that the lateral shift can become either large negative or large positive, which can be controlled by the electron tunneling and the rate of incoherent pump field in different incident angles. It is also demonstrated that the properties of the GH shifts are strongly dependent on the probe absorption beam of the intracavity medium due to the switching from superluminal light propagation to subluminal behavior or vice versa. Our suggested system can be considered as a new theoretical method for developing a new nano-optoelectronic sensor.

DOI
10.1088/0256-307x/33/1/014204

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Journal of Experimental and Theoretical Physics Letters•Apr 1, 2015•13 citations
We study the controlling of the Goos-Hänchen (GH) shifts in reflected and transmitted light beams in the triple coupled InGaAs/GaAs quantum dot (QD) nanostructures with electron tunneling and incoherent pumping field. It is shown that the lateral shift can become either large negative or large positive, which can be controlled by the electron tunneling and the rate of incoherent pump field in different incident angles. It is also demonstrated that the properties of the GH shifts are strongly dependent on the probe absorption beam of the intracavity medium due to the switching from superluminal light propagation to subluminal behavior or vice versa. Our suggested system can be considered as a new theoretical method for developing a new nano-optoelectronic sensor.
Abstract In this letter, we propose a novel model for adjusting the Goos–Hänchen shifts (GH) from a fixed cavity. A three-level double quantum dot (QD) molecule is doped in the cavity, which interacts with a probe laser field and an incoherent pumping rate. We initially investigate the refraction index of double QDs utilizing the quantum mechanical density matrix approach in order to achieve negative and positive refractive indexes. The GH shifts of reflected and transmitted light beams in positive and negative refraction indices of the intracavity medium were then studied. The improved negative or positive GH shifts in reflected and transmitted light beams may be accomplished by changing the incoherent pumping rate and tunneling effect. Our findings reveal that the magnitude of the GH shifts is greatly influenced by the absorption of incoming probing light in double QDs. The enormous GH shifts for the perfect tuning cavity have been seen at a given incidence angle.
Abstract The Goos–Hänchen (GH) shifts due to a negative refractive index in double quantum-dot nanostructures are discussed in reflected and transmitted light beams. It is realized that positive and negative GH shifts can be attained in the negative-refraction medium due to the presence of the indirect incoherent pumping field and electron tunneling. We found that the lateral shift at the fixed incident angle can be enhanced (positive or negative) under suitable conditions on the control field, without changing the structure of the cavity. We hope that our proposed configuration may be helpful for future all-optical sensor devices based on quantum-dot nanostructures.
Abstract In this paper, we propose a new configuration for manipulating Goos–Hänchen (GH) shifts in reflected and transmitted probe beams in a fixed geometrical scheme with a confined four-level InGaN/GaN quantum dot nanostructure. Here, the four-level quantum dot nanostructure is driven by a weak probe light, a coherent coupling field, and two broadband polarized fields that serve as the incoherent pumping fields. We theoretically show that by modulation of the external coupling field, incoherent pumping rates, and detuning of the probe light, the GH shifts in the reflected and transmitted probe light can be controlled. Our results show that enhanced GH shifts of reflected and transmitted probe beams can be obtained by simultaneous use of incoherent pumping rates and detuning of the probe light. Moreover, we find that the GH shifts in both reflected and transmitted probe beams can be negative or positive at certain angles of the incident probe field. Thus, these results may provide some new possibilities for technological applications in all-optical systems based on nanostructure devices.
Abstract We proposed a model for adjusting Goos–Hänchen (GH) shifts in a cavity with quantum dot (QD) nanostructure in this letter. The actual component of the susceptibility was studied by analytical solution of the coherence term of the density matrix elements, and the refractive index of the QD nanostructure was explored. We discovered that the intracavity medium became phase sensitive because of the electron tunneling action. As a result, the relative phase of applied lights may be used to manipulate the medium’s refraction index. The GH shifts in reflected and transmitted light beams in high refractive index QD nanostructures with diminishing probe absorption were next examined. We discovered that the GH shifts of reflected and transmitted lights are greatly influenced by the applied lights’ relative phase. We established that greater negative or positive GH shifts in reflected and transmitted photons are conceivable in the presence of electron tunneling.
The role of a chiral quantum-dot molecule (QDM) system in controlling and enhancing the Goos-H\"anchen (GH) shift is revealed here. The proposed setup is a four-level atomic system excited by incoherent pump and probe fields where the electron tunneling is prominent in affecting the GH shift upon the reflection and transmission of probe beams. The GH shifts in the chiral QDM system are calculated analytically by using stationary phase theory, whereas the dynamics of the quantum-dot system are derived by the density-matrix method. It is demonstrated that the GH shifts through transmission and reflection light beams are strongly influenced due to right-circularly polarized (RCP) and left-circularly polarized light. The GH shifts through RCP light are enhanced in the presence of chiral QDM systems, and these shifts could become either highly negative or highly positive, sensitively depending on the electron tunneling and chiral coefficients. This proposal can be viewed as a theoretical approach to the potential application of GH shifts in nano-optoelectronic sensors.
Controlling of the Goos-Hänchen (GH) shifts of the reflected and transmitted probe pulses through a cavity containing four-level GaAs/AlGaAs quantum dot with 15 periods of 17.5 nm GaAs wells and 25-nm Al 0.3 Ga 0.7 As barriers is investigated. Under appropriate conditions, the probe absorption can be converted to the probe gain, therefore, the controlling of negative and positive GH shift in the both reflected and transmitted probe beams can be occurred simultaneously. Our obtained results show that the group index of the probe beams could be negative or positive in both reflected and transmitted pulses. Therefore, simultaneous subluminal or superluminal light propagation in reflected and transmitted pulses can be achieved.