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International Journal of Modern Physics Conference Series

FINITE SIZE SCALING OF THE TYPICAL DENSITY OF STATES OF DISORDERED SYSTEMS WITHIN THE KERNEL POLYNOMIAL METHOD

DANIEL JUNG, G. Czycholl, Stefan Kettemann

Published Jan 1, 2012• 5 citations
Publisher

Abstract

We study the (Anderson) metal-insulator transition (MIT) in tight binding models (TBM) of disordered systems using the scaling behavior of the typical density of states (GDOS) as localization criterion. The GDOS is obtained as the geometrical mean value of the local density of states (LDOS) averaged over many different lattice sites and disorder realizations. The LDOS can efficiently be obtained within the kernel polynomial method (KPM). To check the validity and accuracy of the method, we apply it here to the standard Anderson model of disordered systems, for which the results (for instance for the critical disorder strength of the Anderson transition) are well known from other methods.

DOI
10.1142/s2010194512005983

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We study the (Anderson) metal-insulator transition (MIT) in tight binding models (TBM) of disordered systems using the scaling behavior of the typical density of states (GDOS) as localization criterion. The GDOS is obtained as the geometrical mean value of the local density of states (LDOS) averaged over many different lattice sites and disorder realizations. The LDOS can efficiently be obtained within the kernel polynomial method (KPM). To check the validity and accuracy of the method, we apply it here to the standard Anderson model of disordered systems, for which the results (for instance for the critical disorder strength of the Anderson transition) are well known from other methods.
The phase diagram of correlated, disordered electron systems is calculated within dynamical mean-field theory using the H\"older mean local density of states. A critical disorder strength is determined in the Anderson-Falicov-Kimball model, and the arithmetic and the geometric averages are found to be just particular means used, respectively, to detect or not the Anderson localization. Correlated metal, Mott insulator, and Anderson insulator phases, as well as coexistence and crossover regimes, are analyzed in this perspective.
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We study numerically the effects of classical magnetic impurities on the Anderson metal-insulator transition. We find that a small concentration of Heisenberg impurities enhances the critical disorder amplitude Wc{W}_{\mathrm{c}}Wc​ with increasing exchange coupling strength JJJ. The resulting scaling with JJJ is analyzed which supports an anomalous scaling prediction by Wegner due to the combined breaking of time-reversal and spin-rotational symmetry. Moreover, we find that the presence of magnetic impurities lowers the critical correlation length exponent $\ensuremath{\nu}$ and enhances the multifractality parameter ${\ensuremath{\alpha}}_{0}$. The new value of $\ensuremath{\nu}$ improves the agreement with the value measured in experiments on the metal-insulator transition (MIT) in doped semiconductors like phosphor-doped silicon, where a finite density of magnetic moments is known to exist in the vicinity of the MIT. The results are obtained by a finite-size scaling analysis of the geometric mean of the local density of states which is calculated by means of the kernel polynomial method. We establish this combination of numerical techniques as a method to obtain critical properties of disordered systems quantitatively.
The insulating state of matter can be probed by means of a ground state geometrical marker, which is closely related to the modern theory of polarization (based on a Berry phase). In the present work we show that this marker can be applied to determine the metal-insulator transition in disordered systems. In particular, for noninteracting systems the geometrical marker can be obtained from the configurational average of the norm-squared one-body density matrix, which can be calculated within open as well as periodic boundary conditions. This is in sharp contrast to a classification based on the static conductivity, which is only sensible within periodic boundary conditions. We exemplify the method by considering a simple lattice model, known to have a metal-insulator transition as a function of the disorder strength, and demonstrate that the transition point can be obtained accurately from the one-body density matrix. The approach has a general ab initio formulation and could in principle be applied to realistic disordered materials by standard electronic structure methods.