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arXiv:cond-mat/0403765 · Physical Review Letters

Mott-Hubbard Transition versus Anderson Localization in Correlated Electron Systems with Disorder

Krzysztof Byczuk, Walter Hofstetter, D. Vollhardt

Published Feb 10, 2005• 246 citations
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Abstract

The phase diagram of correlated, disordered electron systems is calculated within dynamical mean-field theory using the geometrically averaged ("typical") local density of states. Correlated metal, Mott insulator, and Anderson insulator phases, as well as coexistence and crossover regimes, are identified. The Mott and Anderson insulators are found to be continuously connected.

DOI
10.1103/physrevlett.94.056404

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The phase diagram of correlated, disordered electron systems is calculated within dynamical mean-field theory using the geometrically averaged ("typical") local density of states. Correlated metal, Mott insulator, and Anderson insulator phases, as well as coexistence and crossover regimes, are identified. The Mott and Anderson insulators are found to be continuously connected.
The phase diagram of correlated, disordered electron systems is calculated within dynamical mean-field theory using the H\"older mean local density of states. A critical disorder strength is determined in the Anderson-Falicov-Kimball model, and the arithmetic and the geometric averages are found to be just particular means used, respectively, to detect or not the Anderson localization. Correlated metal, Mott insulator, and Anderson insulator phases, as well as coexistence and crossover regimes, are analyzed in this perspective.
The ground-state phase diagrams of the Falicov-Kimball model with local disorder are derived within the dynamical mean-field theory and using the geometrically averaged (``typical'') local density of states. Correlated metal, Mott insulator, and Anderson insulator phases are identified. The metal-insulator transitions are found to be continuous. The interaction and disorder compete with each other stabilizing the metallic phase against the occurring one of the insulators. The Mott and Anderson insulators are found to be continuously connected.
The DOS, the dynamic (optical) conductivity, and the phase diagram of a strongly correlated and strongly disordered paramagnetic Anderson-Hubbard model are analyzed within the generalized dynamical mean field theory (DMFT + Σ approximation). Strong correlations are taken into account by the DMFT, and disorder is taken into account via an appropriate generalization of the self-consistent theory of localization. The DMFT effective single-impurity problem is solved by a numerical renormalization group (NRG); we consider the three-dimensional system with a semielliptic DOS. The correlated metal, Mott insulator, and correlated Anderson insulator phases are identified via the evolution of the DOS and dynamic conductivity, demonstrating both the Mott-Hubbard and Anderson metal-insulator transition and allowing the construction of the complete zero-temperature phase diagram of the Anderson-Hubbard model. Rather unusual is the possibility of a disorder-induced Mott insulator-to-metal transition.
The interplay between Mott and Anderson routes to localization in disordered interacting systems gives rise to different transitions and transport regimes. Here, we investigate the phase diagram at finite temperatures using dynamical mean-field theory combined with typical medium theory, which is an effective theory of the Mott-Anderson metal-insulator transition. We mainly focus on the properties of the coexistence region associated with the Mott phase transition. For weak disorder, the coexistence region is found to be similar to that in the clean case. However, as we increase disorder, Anderson localization effects are responsible for shrinking the coexistence region, and at sufficiently strong disorder (approximately equal to twice the bare bandwidth) it drastically narrows, the critical temperature Tc{T}_{c}Tc​ abruptly goes to zero, and we observe a phase transition in the absence of a coexistence of the metallic and insulating phases. In this regime, the effects of interaction and disorder are found to be of comparable importance for charge localization.
Strongly correlated fermions in a crystal or in an optical lattice in the presence of binary-alloy disorder are investigated. We employ the statistical dynamical mean-field theory, which incorporates both fluctuations due to disorder and local correlations due to interaction, to solve the Anderson-Hubbard model. Localization due to disorder is studied by means of the probability distribution function of the local density of states. We obtain a complete paramagnetic ground state phase diagram consisting of disordered correlated metal, Anderson-Mott insulator, and band insulator.
We derive the disorder vs doping phase diagram of the doped Hubbard model via dynamical mean-field theory combined with typical medium theory, which allows the description of both Mott (correlation driven) and Anderson (disorder driven) metal-insulator transitions. We observe a transition from a metal to an Anderson-Mott insulator for increasing disorder strength at all interactions. In the weak correlation regime and rather small doping, the Anderson-Mott insulator displays properties which are similar to the ones found at half filling. In particular, this phase is characterized by the presence of empty sites. If we further increase either the doping or the correlation, however, an Anderson-Mott phase of a different kind arises for sharply weaker disorder strength. This phase occupies the largest part of the phase diagram in the strong-correlation regime and is characterized by the absence of the empty sites.