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arXiv:1507.04360 · Physical Review B

Anderson localization effects near the Mott metal-insulator transition

Helena Bragança, Maria C. O. Aguiar, J. Vučičević, D. Tanasković, V. Dobrosavljević

Published Sep 24, 2015• 30 citations
arXivHTMLPDF

Abstract

The interplay between Mott and Anderson routes to localization in disordered interacting systems gives rise to different transitions and transport regimes. Here, we investigate the phase diagram at finite temperatures using dynamical mean-field theory combined with typical medium theory, which is an effective theory of the Mott-Anderson metal-insulator transition. We mainly focus on the properties of the coexistence region associated with the Mott phase transition. For weak disorder, the coexistence region is found to be similar to that in the clean case. However, as we increase disorder, Anderson localization effects are responsible for shrinking the coexistence region, and at sufficiently strong disorder (approximately equal to twice the bare bandwidth) it drastically narrows, the critical temperature ${T}_{c}$ abruptly goes to zero, and we observe a phase transition in the absence of a coexistence of the metallic and insulating phases. In this regime, the effects of interaction and disorder are found to be of comparable importance for charge localization.

DOI
10.1103/physrevb.92.125143

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The interplay between Mott and Anderson routes to localization in disordered interacting systems gives rise to different transitions and transport regimes. Here, we investigate the phase diagram at finite temperatures using dynamical mean-field theory combined with typical medium theory, which is an effective theory of the Mott-Anderson metal-insulator transition. We mainly focus on the properties of the coexistence region associated with the Mott phase transition. For weak disorder, the coexistence region is found to be similar to that in the clean case. However, as we increase disorder, Anderson localization effects are responsible for shrinking the coexistence region, and at sufficiently strong disorder (approximately equal to twice the bare bandwidth) it drastically narrows, the critical temperature Tc{T}_{c}Tc​ abruptly goes to zero, and we observe a phase transition in the absence of a coexistence of the metallic and insulating phases. In this regime, the effects of interaction and disorder are found to be of comparable importance for charge localization.
We derive the disorder vs doping phase diagram of the doped Hubbard model via dynamical mean-field theory combined with typical medium theory, which allows the description of both Mott (correlation driven) and Anderson (disorder driven) metal-insulator transitions. We observe a transition from a metal to an Anderson-Mott insulator for increasing disorder strength at all interactions. In the weak correlation regime and rather small doping, the Anderson-Mott insulator displays properties which are similar to the ones found at half filling. In particular, this phase is characterized by the presence of empty sites. If we further increase either the doping or the correlation, however, an Anderson-Mott phase of a different kind arises for sharply weaker disorder strength. This phase occupies the largest part of the phase diagram in the strong-correlation regime and is characterized by the absence of the empty sites.
Interacting fermions in the presence of disorder pose one of the most challenging problems in condensed matter physics, primarily due to the absence of accurate numerical tools. Our investigation delves into the intricate interplay between interaction-induced Mott insulation and disorder-driven Anderson localization in the Hubbard model subjected to a random potential. On the Cayley tree, the application of statistical dynamical mean-field theory proves adept at discerning among a metal and the two distinct insulators, Anderson or Mott. Our comprehensive analysis, accounting for subtle yet potent finite-size effects and fluctuations, yields a noteworthy finding: in the presence of disorder, we consistently observe an intervening Anderson-localized regime between the metallic and Mott insulator states. This observation intriguingly mirrors scenarios witnessed in dirty Bosons, where an insulating Bose glass phase consistently emerges between the superfluid and Mott phases.
A metal can be driven to an insulating phase through distinct mechanisms. A possible way is via the Coulomb interaction, which then defines the Mott metal-insulator transition (MIT). Another possibility is the MIT driven by disorder, the so-called Anderson MIT. Here we analyze interacting particles in disordered Hubbard chains---thus comprising the Mott-Anderson physics---by investigating the ground-state entanglement with density functional theory. The localization signature on entanglement is found to be a decreasing on the entanglement degree in comparison to the clean (without interaction and disorder) case, with local minima at certain critical densities. Individually, the Mott (Anderson) MIT has a single critical density whose minimum entanglement decreases as the interaction (disorder) enhances. While in the Mott MIT entanglement saturates at finite values, characterizing partial localization, in the Anderson MIT the system reaches full localization, with zero entanglement, for sufficiently strong disorder. In the combined Mott-Anderson MIT, we find three critical densities referring to local minima on entanglement. One of them is the same as for the Anderson MIT, but now the presence of interaction requires a stronger disorder potential to induce full localization. A second critical density is related to the Mott MIT, but due to disorder it is displaced by a factor proportional to the concentration of impurities. The third local minimum on entanglement is unique to the concomitant presence of disorder and interaction, found to be related to an effective density phenomenon, thus referred to as a Mott-like MIT. Since entanglement has been intrinsically connected to the magnetic susceptibility---a quantity promptly available in cold-atom experiments---our detailed numerical description might be useful for the experimental investigation of the Mott-Anderson MIT.
We studied several aspects of the Mott metal-insulator transition in the disordered case. The model on which we based our analysis is the disordered Hubbard model, which is the simplest model capable of capturing the Mott metal-insulator transition. We investigated this model through statistical dynamical mean-field theory (statDMFT). This theory is a natural extension of dynamical mean-field theory (DMFT), which has been used with relative success in the past several years with the purpose of describing the Mott transition in the clean case. As is the case for the latter theory, statDMFT incorporates the electronic correlation effects only in their local manifestations. Disorder, on the other hand, is treated in such a way as to incorporate Anderson localization effects. With this technique, we analyzed the disordered two-dimensional Mott transition, using the quantum Monte Carlo algorithm to solve the associated single-impurity problems. We found spinodal lines at which the metal and insulator ceased to be metastable. We also studied spatial fluctuations of local quantities, such as self-energy and local Green's function, and showed the appearance of metallic regions within the insulator and vice versa. We carried out an analysis of finite-size effects and showed that, in agreement with the theorems of Imry and Ma [Y. Imry and S. K. Ma, Phys. Rev. Lett. 35, 1399 (1975).], the first-order transition is smeared in the thermodynamic limit. We analyzed transport properties by means of a mapping to a random classical resistor network and calculated both the average current and its distribution across the metal-insulator transition.
The influence of disorder and pseudogap fluctuations on the Mott insulator-metal transition in strongly correlated systems has been studied in the framework of the generalized dynamic mean field theory (DMFT + Σ approach). Using the results of investigations of the density of states (DOS) and optical conductivity, a phase diagram (disorder-Hubbard interaction-temperature) is constructed for the paramagnetic Anderson-Hubbard model, which allows both the effects of strong electron correlations and the influence of strong disorder to be considered. Strong correlations are described using the DMFT, while a strong disorder is described using a generalized self-consistent theory of localization. The DOS and optical conductivity of the paramagnetic Hubbard model have been studied in a pseudogap state caused by antiferromagnetic spin (or charge) short-range order fluctuations with a finite correlation length, which have been modeled by a static Gaussian random field. The effect of a pseudogap on the Mott insulator-metal transition has been studied. It is established that, in both cases, the static Gaussian random field (related to the disorder or pseudogap fluctuations) leads to suppression of the Mott transition, broadening of the coexistence region of the insulator and metal phases, and an increase in the critical temperature at which the coexistence region disappears.
Quantum materials exhibit a rich dynamic of physical parameters, which, when combined, can lead to entirely different behaviors. These parameters constantly compete with each other, with the most influential parameters determining the state of the system. For example, in the case of metal–insulator transitions, electron–electron interactions compete with the kinetic energy of the electrons and disorder. Understanding these complex dynamics is crucial for both fundamental physics and the development of novel technological applications, particularly given the role of disorder in tuning critical temperatures, a property with significant potential benefit in the fabrication of new devices where temperature requirements are still the bottleneck. In this article, properties of the Mott metal–insulator transition within disordered electron systems are explored using the disordered Hubbard model, the simplest Hamiltonian for capturing the metal–insulator transition. The model solutions are obtained using the self-consistent statistical dynamical mean-field theory (statDMFT). statDMFT incorporates local electronic correlation effects while allowing for Anderson localization due to disorder.