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Optics Letters

Amplitude squeezing of a semiconductor laser with light injection

Akira Furusawa

Published Dec 15, 1996• 16 citations
Publisher

Abstract

2.3 dB of amplitude squeezing has been observed in a semiconductor laser with light injection from a singlemode semiconductor laser to one of the longitudinal modes of the slave laser. The slave laser operates as a semiconductor laser amplifier and oscillates at the injected mode, which differs from the free-running oscillation modes.
DOI
10.1364/ol.21.002014

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This dissertation describes a series of measurements that confirmed the existence of amplitude squeezing in a commercially available type of laser diode and makes the critical observation that the primary requirement to obtain squeezing, in addition to sub-Poissonian pumping, is the suppression of longitudinal side modes. Side-mode suppression was achieved using optical feedback from a grating in an external cavity configuration or by injection locking to a single-wavelength master laser. The external cavity setup allowed as much as 1.8 dB of amplitude squeezing to be generated with the laser diode operating at room temperature, and provided a means for tuning the output wavelength over a range in excess of 20 nm. The injection locking approach achieved more than 3.0 dB of squeezing at cryogenic temperatures and made it possible to maintain squeezing in the presence of drive-current modulation signals, facilitating potential applications in precision measurement systems and communications. By identifying some of the noise mechanisms which prevent the observation of amplitude squeezing and establishing that squeezing is a much more robust phenomenon than previous work had indicated, this research has shown that there may be important practical uses for these sources as diode laser technology evolves.
The intensity-noise properties of an injection-locked semiconductor laser were studied experimentally. The constant-current-driven semiconductor laser producing the amplitude-squeezed state whose intensity noise was reduced below the standard quantum limit (SQL) by 0.72 dB was injection-locked by an external master laser. The measured intensity-noise level of the injection-locked semiconductor laser was 0.91 dB below the SQL. This experimental result indicates that a phase-coherent amplitude-squeezed state or squeezed vacuum state together with a reference local oscillator wave can be generated directly by semiconductor laser systems.
Amplitude-squeezed light has been generated by semiconductor quantum well lasers in numerous optical configurations, at both room and cryogenic temperatures. Various intensity noise sources associated with nonideal laser operation, in particular mode partition and polarization-dependent noise, can introduce intensity fluctuations that limit or remove amplitude squeezing. We discuss amplitude noise reduction in low-temperature free-running and injection-locking laser configurations and room-temperature injection locking and external-cavity laser configurations. Drive-current modulation with a nonclassical SNR improvement is achieved with an injection-locked laser.
The generation of light with amplitude-noise levels below the standard quantum limit (SQL) by constant-current operation of light-emitting and semiconductor laser diodes has been well established.1 Nearly all of this work, however, has been conducted with the light source cooled to cryogenic temperatures. At room temperature, the highest observed squeezing levels were 0.6 dB for light-emitting diodes and 0.2 dB for laser diodes.2 We presently report up to 1.8 dB of squeezing from a commercially available index-guided quantum-well laser (SDL-5410-C) operated at room temperature. Although cross-gain saturation can lead to amplitude squeezing of the total number of photons emitted by a multimode semiconductor laser in the limit of fast intraband scattering and the absence of wavelength-dependent loss,3 we found that it was necessary to suppress the >100 near-threshold longitudinal side modes of the laser to obtain squeezing at room temperature. This was accomplished either by using optical feedback from a grating in an external cavity configuration or by injection-locking the laser to a single-frequency laser. Both of these techniques allow the output wavelength of the laser to be named and thus the squeezing level as a function of wavelength to be studied.