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Physical review. B, Condensed matter

Accumulated photon echo in semiconductor microcrystalline quantum dots

Takashi Kuroda, F. Minami, Kuon Inoue, Alexander V. Baranov

Published Jan 15, 1998• 13 citations
Publisher

Abstract

The nonlinear coherent emission of excitons in CuBr quantum dots was investigated using a phase-stabilized photon-echo technique. The echo signal was observed to be quite strong, with the emission efficiency being three orders of magnitude larger than that of II-VI semiconductor quantum wells. Time resolving of the echo signal confirmed that the strong nonlinear emission originates from the accumulation effect of the population grating due to the presence of the bottleneck state. Formation and decay kinetics of the population grating was analyzed by taking into account the light-induced deexcitation effect.

DOI
10.1103/physrevb.57.r2077

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The nonlinear coherent emission of excitons in CuBr quantum dots was investigated using a phase-stabilized photon-echo technique. The echo signal was observed to be quite strong, with the emission efficiency being three orders of magnitude larger than that of II-VI semiconductor quantum wells. Time resolving of the echo signal confirmed that the strong nonlinear emission originates from the accumulation effect of the population grating due to the presence of the bottleneck state. Formation and decay kinetics of the population grating was analyzed by taking into account the light-induced deexcitation effect.
We have investigated nonlinear coherent transients of confined excitons in CuBr quantum dots with use of a three-pulse photon-echo technique. The echo signal shows quantum beats between LO-phonon coupled exciton levels, reflecting a strong electron–phonon interaction in the present quantum dots. The emission efficiency is found to be three orders of magnitude larger than those of ordinary semiconductors, implying that the significant accumulation effect is responsible for the nonlinear emission.
Nonlinear optical response and optical coherence of excitons in semiconductor dense quantum dots in GaAs single quantum wells has been studied by using photon echo techniques. At low temperatures, the optical coherence is estimated to be 2 ns from the decay curve in the photon echo signal. Rabi oscillations are also observed. Unlike the results for a single quantum dot in the literature to date, the oscillation shows nonlinear behavior affected strongly by the pre-excited carrier density. The results can be explained by the theory of the local field correction originating from exciton-exciton interaction between the inter dots.
Optical coherence time and nonlinear optical response of excitons localized to quantum dots in a GaAs/AlGaAs single quantum well are investigated by the three-pulse photon echo technique. At low temperature, the optical coherence time is estimated to be 1.8 ns from the decay curve of the photon echo signal. The decay profile for short time delay shows the strong dependence on the input pulse area of the third pulse. Rabi oscillations are also observed. The oscillations exhibit nonlinear behavior, which is affected by the pre-excited polarization. Such behavior can be qualitatively explained by the local field effect due to the exciton-exciton interaction between the excitons.
We investigate the dephasing mechanism of optically-induced exciton coherence in an ensemble of InAs self-assembled quantum dots (QDs) using a two-pulse photon-echo (PE) technique. The sample was fabricated on an InP (311)B substrate using strain compensation to control the emission wavelength. This technique also enabled us to fabricate a 150-layer stacked QD structure for enhancing the PE signal intensity. We show the measured decay time of PE signal intensity for resonant excitation of ground-state transition is extremely long, which corresponds to ultralong coherence times of excitons in our QDs. We confirmed that non-radiative population relaxation and pure dephasing are considerably smaller than the radiative relaxation at low temperature. Furthermore, we demonstrate the ultrafast coherent control of QD exciton polarization by changing the pulse areas (Rabi oscillations) in the PE experiment. We also propose a new scheme for implementing QD quantum memory by using the PE technique.
Experimental results of observations of a femtosecond photon echo excited in an ensemble of quantum nanometer-sized objects in thin semiconductor (ZnO, SiB, SiP) films at room temperature are presented. The observed properties of the photon echo are discussed. Recorded relaxation times of exciton quantum transitions and beats at the photon echo decay as a function of the increasing interval between the exciting pulses reveal the role played by the defects of the thin film in the formation of its exciton structure of quantum transitions investigated using angular optical echo spectroscopy.