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IEEE Sensors Journal

A Low-Noise, Large-Dynamic-Range-Enhanced Amplifier Based on JFET Buffering Input and JFET Bootstrap Structure

Haijun J. Zhou, Wenzhe Wang, Chaoyong Chen, Yaohui Zheng

Published Nov 20, 2014• 35 citations
Publisher

Abstract

We design a low-noise, large-dynamic-range amplifier based on transimpedance amplifier (TIA) for detecting shot noise of 1064-nm laser in quantum optical experiments. Compared with a single-junction field-effect transistor (JFET) buffered TIA, the electronic noise is effectively 2.8 dB suppressed at the analysis of 2 MHz, and 4 dB suppressed at 4 MHz by means of a JFET bootstrap structure. Under the transimpedance gain of 200 kΩ and 0.5 pF, the measured shot noise at the injected laser power of 51 μW is 12.5 dB above the electronic noise at 2 MHz, and 9.8 dB at 4 MHz. With adjustment of bias condition of the bootstrap structure and application of a L-C (inductance and capacitance) structure, the dynamic range is largely boosted from the original 1.52 to 11.22 mW. The amplifier meets the requirement of SNR for Bell-state detection in quantum optical experiments.

DOI
10.1109/jsen.2014.2371893

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We design a low-noise, large-dynamic-range amplifier based on transimpedance amplifier (TIA) for detecting shot noise of 1064-nm laser in quantum optical experiments. Compared with a single-junction field-effect transistor (JFET) buffered TIA, the electronic noise is effectively 2.8 dB suppressed at the analysis of 2 MHz, and 4 dB suppressed at 4 MHz by means of a JFET bootstrap structure. Under the transimpedance gain of 200 kΩ and 0.5 pF, the measured shot noise at the injected laser power of 51 μW is 12.5 dB above the electronic noise at 2 MHz, and 9.8 dB at 4 MHz. With adjustment of bias condition of the bootstrap structure and application of a L-C (inductance and capacitance) structure, the dynamic range is largely boosted from the original 1.52 to 11.22 mW. The amplifier meets the requirement of SNR for Bell-state detection in quantum optical experiments.
We demonstrate a low-noise, high-gain, and large-dynamic-range photodetector (PD) based on a junction field-effect transistor (JFET) and a charge amplifier for the measurement of quantum noise in Bell-state detection (BSD). Particular photodiode junction capacitance allows the silicon N-channel JFET 2sk152 to be matched to the noise requirement for charge amplifier A250. The electronic noise of the PD is effectively suppressed and the signal-to-noise ratio (SNR) is up to 15 dB at the analysis frequency of 2.75 MHz for a coherent laser power of 50.08 µW. By combining of the inductor and capacitance, the alternating current (AC) and direct current (DC) branches of the PD can operate linearly in a dynamic range from 25.06 µW to 17.50 mW. The PD can completely meet the requirements of SNR and dynamic range for BSD in quantum optics experiments.
High-precision cavity locking is crucial for squeezing optical fields. Here, a bootstrapped low-noise photodetector is utilized in the generation process of the squeezed state of light. This process is based on a combination of a modified trans-impedance amplifier (TIA) circuit and a two-stage bootstrap amplifier circuit. This not only achieves high-precision and long-term stable locking of the optical cavity, but it also improves the degree to which the light field is squeezed. The experiment results show that the detector has a high signal-to-noise ratio (SNR) of 26.7 dB at the analysis frequency of 3 MHz when measuring the shot noise with an injection optical power of 800 µW, and the equivalent optical power noise level is lower than 2.4 pW/Hz in the frequency range of 1-30 MHz. Moreover, the squeezing degree of the quadrature amplitude squeezed state light field can be improved by more than 34.9% when the detector is used for optical cavity locking. The photodetector is useful in continuous variable (CV) quantum information research.
A well-balanced detector with high sensitivity and low noise is presented in this paper. The two-stage amplification structure is used to increase electronic gain while keeping an effective bandwidth of about 70 MHz. In order to further reduce electronic noise, a junction field-effect transistor(JFET) is connected between photodiodes and transimpedance amplifier to reduce the impact of amplifier leakage current. Benefit from these designs, the root-mean-square(RMS) of noise voltage is about 6 mV with a gain of 3.2E5 V/W, and it means an ultra-low noise equivalent power density of 2.2E-12 W/rtHz, only half of common low-noise commercial detectors. In addition, two photodiodes in similar frequency response are selected for detector and make the common mode rejection ratio(CMRR) of detector reached 53 dB, about 13 dB higher than commercial detectors. Further tests indicate that 16.8 dB shot-noise to electronic-noise ratio is measured in our detector, which is better than most high speed balanced detectors.
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A low-noise photodetector is a basic tool for the research of quantum information processing.We present a specially designed low-noise photoelectric detector with a bandwidth of 130 MHz, using a transimpedance amplification circuit.Based on the detailed calculation of the dependence on each parameter of the detector, a useful method of how to design a low-noise and broadband photodetector is provided.When the optical power is between 1.0 and 16 mW, the photodetector has a good linear response to the injected light.Its electronics noise power is below -77 dBm, which is within the whole bandwidth.When the incident light power is 2 mW, the output noise powers are 10.0, 8.0, and 6.0 dB higher than the corresponding electronics noise within the bandwidth of 1-50, 50-90, and 90-130 MHz, respectively, which is in good agreement with the theoretical prediction.Thus, this photoelectric detector could have good application prospects in quantum communication and an optical cavity locking system.
We report a low-noise, high-signal-to-noise-ratio (SNR) balanced homodyne detector based on the standard transimpedance amplifier circuit and the inductance and capacitance combination for the measurement of the bright squeezed state in the range from 1 kHz to 100 kHz. A capacitance is mounted at the input end of the AC branch to prevent the DC photocurrent from entering the AC branch and avoid AC branch saturation. By adding a switch at the DC branch, the DC branch can be flexibly turned on and off on different occasions. When the switch is on, the DC output provides a monitor signal for laser beam alignment. When the switch is off, the electronic noise of the AC branch is greatly reduced at audio-frequency band due to immunity to the impedance of the DC branch, hence the SNR of the AC branch is significantly improved. As a result, the electronic noise of the AC branch is close to −125 dBm, and the maximum SNR of the AC branch is 48 dB with the incident power of 8 mW in the range from 1 kHz to 100 kHz. The developed photodetector paves a path for measuring the bright squeezed state at audio-frequency band.