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physica status solidi (b)

Resonatorless Dissipative Optical Bistability. Influence of External Fields and Sample Thickness

V. A. Kochelap, V. N. Sokolov

Published Mar 1, 1988• 5 citations
Publisher

Abstract

Abstract The influence of sample thickness and carrier surface recombination on the characteristics of resonatorless dissipative optical bistability (RDOB) is investigated. The RDOB under consideration is caused by the excitation density nonlinearities of band‐edge absorption of laser radiation in semiconductors. The diversity of multivalued spatial carrier distributions in the sample of thickness d with arbitrary velocity of surface recombination S are considered. It is established that strong recombination can considerably affect the structure and properties of possible carrier distributions and hysteresis of the transmission.

DOI
10.1002/pssb.2221460133

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Abstract The influence of sample thickness and carrier surface recombination on the characteristics of resonatorless dissipative optical bistability (RDOB) is investigated. The RDOB under consideration is caused by the excitation density nonlinearities of band‐edge absorption of laser radiation in semiconductors. The diversity of multivalued spatial carrier distributions in the sample of thickness d with arbitrary velocity of surface recombination S are considered. It is established that strong recombination can considerably affect the structure and properties of possible carrier distributions and hysteresis of the transmission.
Abstract A new type of optical bistability is presented. Instead of a resonator the intrinsic feedback between the optical excitation of carriers and their recombination is used. Optical bistability appears, if the absorption coefficient increases with growing carrier density. Both propagation effects and carrier diffusion are considered. Analytical model calculations are carried out for an abrupt behaviour of the absorption coefficient. The results explain the hysteresis in the transmittivity of CdS, recently observed.
Abstract The results of numerical calculations of the band edge absorption dependence on photoexcitation density for hexagonal CdS, CdSe, and cubic ZnSe are presented. The calculations are based on the recent plasma screening theory of Banyai and Koch modified to take into account the band structure and anisotropy of these materials. At low temperatures the resonatorless optical bistability is predicted for all three materials provided their quality is high enough. It is shown that the proper material and parameter choice apparently may lower the corresponding intensities down to kW/cm2 range.
The conditions for the realization of absorption optical bistability under the simultaneous action of two (radiative and nonradiative) mechanisms of recombination of free charge carriers are investigated. It is shown that, in the diffusion mechanism of stream of free electrons from the beam axis, the temperature dependence of radiative recombination does not expand the temperature range of the thermostat in which the optical bistability occurs. A scheme is proposed with application of an external transverse electric field, which makes it possible to realize absorption optical bistability at any ambient temperature. An important advantage of this scheme is the conservation of the state of a bistable system after the action of a light pulse and a significant decrease in the energy spent on cooling of the medium.
Within the framework of a simple numerical model, we investigate the optical properties of a laser-excited direct-band-gap semiconductor (CdS) in the case when both free and bound electron-hole pairs are present. At low temperatures the ionization of excitons proceeds via a first-order phase transition, which is closely related to the Mott transition, and we argue that in direct-band-gap semiconductors it is not suppressed by the electron-hole liquid condensation, as it is in indirect-band-gap materials. The existence of the two corresponding ionization phases with different optical properties is shown to result in optical bistability (OB), which is quite similar to the increasing-absorption (resonatorless) OB but has some peculiarities of its own. Our model also predicts another optical manifestation of this ionization phase transition---the possibility of absorption oscillations at resonant excitation of excitons.