physica status solidi (b)

Resonatorless Dissipative Optical Bistability of Electronic Origin in Direct‐Gap Semiconductors

V. A. Kochelap, A. V. Kuznetsov, V. N. Sokolov

Published Dec 1, 1988• 5 citations

Abstract

Abstract The results of numerical calculations of the band edge absorption dependence on photoexcitation density for hexagonal CdS, CdSe, and cubic ZnSe are presented. The calculations are based on the recent plasma screening theory of Banyai and Koch modified to take into account the band structure and anisotropy of these materials. At low temperatures the resonatorless optical bistability is predicted for all three materials provided their quality is high enough. It is shown that the proper material and parameter choice apparently may lower the corresponding intensities down to kW/cm2 range.

DOI: 10.1002/pssb.2221500222

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