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Optics Letters

Spin-lattice relaxation in the excited ^4S_3/2 state of Er^3+ in LaF_3

Matthijs M. Broer, John Hegarty, G. F. Imbusch, William M. Yen

Published Nov 1, 1978• 14 citations
Publisher

Abstract

We have employed a purely optical method to measure spin-lattice relaxation in the lower excited (4)S(3/2) state of Er(3+) in LaF(3) at helium temperatures. Above 3 K the relaxation is dominated by an Orbach process through the upper (4)S(3/2) state. Below 3 K the relaxation is caused by some residual mechanism that obscures the Kramers-Van Vleck direct process. By relating the Orbach relaxation measurements to the homogeneous broadening of the upper (4)S(3/2) level, we determine values of the transition rates between the upper and lower (4)S(3/2) states.

DOI
10.1364/ol.3.000175

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Spin-lattice relaxation by the direct process in optically excited Er^3+ in LaF_3

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Mechanism of a population inversion between the4I11/2and4I13/2levels of the Er3+ion in Y3AI5O12crystals

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Studies of the spectra of stimulated emission from Y 3 AI 5 O 12 :Er 3+ crystals ( 4 I 11/2 – 4 I 13/2 ) containing 20 wt. % activator ions, showed that, as the temperature decreased from 300 to 77°K, a change was observed in the emission wavelength (at T = 300°K it was found that λ 1 = 2.9364 μ λ 2 = 2.8310 μ and at T = 77°K it was found that λ 1 = 2.6930 μ , λ 2 = 2.8970 μ ). This could not be attributed to a thermal redistribution of the populations of the Stark components of the 4 I 11/2 and 4 I 13/2 upper and lower active levels. An analysis of the results showed that the temperature shift of the stimulated emission spectrum was due to changes in the processes of relaxation of excitation from the upper levels of the Er 3+ ion which caused substantial changes in the populations of the 4 I 11/2 and 4 I 13/2 multiplets.

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A Pathway to Er Sites in Si with Long Spin and Optical Coherence Times

Alexey Lyasota, Ian R. Berkman, Gabriele G. de Boo +9 more

Rare-earth ions in solid-state hosts exhibit low homogeneous broadening and long spin coherence at cryogenic temperatures thus making them a promising candidate for optical quantum memories [1], optical-microwave transducers [2] and single dopant-based devices such as single photon emitters operating at the telecommunication wavelengths [3]. Here, we present an overview of the spin and optical properties of Er ensembles in Si accessed via resonant photoluminescence excitation (PLE) spectroscopy [4]. Samples were positioned directly on top of tailor-fabricated superconducting single photon detectors, placed in a dilution refrigerator unit and resonantly excited using fiber optics. Our method provided high collection efficiency and allowed spectral measurements of low Er density samples. The observed Er PLE spectra were strongly affected by the presence of co-dopants such as O, B or P reflecting their influence on the formation of optically active Er sites and corresponding Er optical transition energies. Higher O densities resulted in especially rich PLE spectra suggesting that a variety of Er-O complexes formed due to O doping. Lowering the O concentration, we achieved PLE spectra dominated by a single Er site in P doped samples. Interestingly, the Er spin relaxation and optical coherence properties were barely affected by the employed co-dopants and mainly depended on the Er concentration. By lowering the Er concentration from relatively high (1018cm-3) to low densities (1016cm-3), we were able to increase Er spin lifetimes from ~0.1 s to ~30 s. Long spin relaxation times allowed us to identify PLE spectra of new Er sites in Si. In both concentration regimes, we observed sub-MHz transient spectral holes suggesting long optical coherence times. Furthermore, we observed sub-MHz spin transitions in both natural and isotopically purified Si and achieved spin coherence times above 1 ms in isotopically purified Si. Narrow optical linewidths and long transverse and longitudinal spin relaxation times show that Er in Si is an excellent candidate for future quantum information and communication applications.

Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC)•Jun 26, 2023•0 citations
We have employed a purely optical method to measure spin-lattice relaxation in the lower excited (4)S(3/2) state of Er(3+) in LaF(3) at helium temperatures. Above 3 K the relaxation is dominated by an Orbach process through the upper (4)S(3/2) state. Below 3 K the relaxation is caused by some residual mechanism that obscures the Kramers-Van Vleck direct process. By relating the Orbach relaxation measurements to the homogeneous broadening of the upper (4)S(3/2) level, we determine values of the transition rates between the upper and lower (4)S(3/2) states.
The paper describes experimental investigations of two-color optical super-radiance (SR) in LaF3:Pr3+ crystal. Optical excitation was made on the transition 3P0- 3H4(0) at liquid helium temperature. When the power of the pumping 10ns-pulse was higher than a certain threshold, the resonant medium emitted an optical SR pulse on 3P0-3H4(0) transition with a duration of 8-10 ns in the direction of the pumping pulse delayed in time by 12-15 ns with respect to the pumping pulse. When the peak power of the pumping pulse increases up to 40 kW, an SR pulse was also observed for the 3P0-3H6(1) transition. The delay time of this pulse was about 30 ns. Thus, the two-color SR in the employed crystal was observed.
The relaxation of ortho states of a helium-like Mg donor in silicon is investigated by measuring the modulation of background radiation transmission through impurity centers under pulsed photoexcitation. Long-lived states of the spin-triplet 1s(3T2) group with a lifetime of about 20 ms are observed. The temperature dependence indicates that the relaxation is governed by the Orbach mechanism with an activation energy ~13 meV, which is close to the exchange splitting energy of the excited 1s states of the Mg donor.
Studies of the spectra of stimulated emission from Y 3 AI 5 O 12 :Er 3+ crystals ( 4 I 11/2 – 4 I 13/2 ) containing 20 wt. % activator ions, showed that, as the temperature decreased from 300 to 77°K, a change was observed in the emission wavelength (at T = 300°K it was found that λ 1 = 2.9364 μ λ 2 = 2.8310 μ and at T = 77°K it was found that λ 1 = 2.6930 μ , λ 2 = 2.8970 μ ). This could not be attributed to a thermal redistribution of the populations of the Stark components of the 4 I 11/2 and 4 I 13/2 upper and lower active levels. An analysis of the results showed that the temperature shift of the stimulated emission spectrum was due to changes in the processes of relaxation of excitation from the upper levels of the Er 3+ ion which caused substantial changes in the populations of the 4 I 11/2 and 4 I 13/2 multiplets.
Rare-earth ions in solid-state hosts exhibit low homogeneous broadening and long spin coherence at cryogenic temperatures thus making them a promising candidate for optical quantum memories [1], optical-microwave transducers [2] and single dopant-based devices such as single photon emitters operating at the telecommunication wavelengths [3]. Here, we present an overview of the spin and optical properties of Er ensembles in Si accessed via resonant photoluminescence excitation (PLE) spectroscopy [4]. Samples were positioned directly on top of tailor-fabricated superconducting single photon detectors, placed in a dilution refrigerator unit and resonantly excited using fiber optics. Our method provided high collection efficiency and allowed spectral measurements of low Er density samples. The observed Er PLE spectra were strongly affected by the presence of co-dopants such as O, B or P reflecting their influence on the formation of optically active Er sites and corresponding Er optical transition energies. Higher O densities resulted in especially rich PLE spectra suggesting that a variety of Er-O complexes formed due to O doping. Lowering the O concentration, we achieved PLE spectra dominated by a single Er site in P doped samples. Interestingly, the Er spin relaxation and optical coherence properties were barely affected by the employed co-dopants and mainly depended on the Er concentration. By lowering the Er concentration from relatively high (1018cm-3) to low densities (1016cm-3), we were able to increase Er spin lifetimes from ~0.1 s to ~30 s. Long spin relaxation times allowed us to identify PLE spectra of new Er sites in Si. In both concentration regimes, we observed sub-MHz transient spectral holes suggesting long optical coherence times. Furthermore, we observed sub-MHz spin transitions in both natural and isotopically purified Si and achieved spin coherence times above 1 ms in isotopically purified Si. Narrow optical linewidths and long transverse and longitudinal spin relaxation times show that Er in Si is an excellent candidate for future quantum information and communication applications.