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Acta Physica Sinica (Overseas Edition)

Radiation of dressed excitons in the semiconductor microcavity

Liu Shi-an, Lin Shi-ming, Qiming Wang

Published Jul 1, 1999• 1 citation
Publisher

Abstract

In this paper, we introduced the dressed exciton model of the semiconductor micro-cavity device. In the semiconductor micro cavity of vertical-cavity surface-emission device, the excitons first coupled with the cavity through an intra-electromagnetic field and formed the dressed excitons. Then these dressed excitons decayed into the vacuum cavity optical mode, as a multiparticle process. Through the quantum electrodynamics method, the dipole emission density and system energy decayed equation were obtained. And it was predicted that the excitons decay into a very narrow mode when the exciton-cavity coupling becomes strong enough.

DOI
10.1088/1004-423x/8/7/006

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In this paper, we introduced the dressed exciton model of the semiconductor micro-cavity device. In the semiconductor micro cavity of vertical-cavity surface-emission device, the excitons first coupled with the cavity through an intra-electromagnetic field and formed the dressed excitons. Then these dressed excitons decayed into the vacuum cavity optical mode, as a multiparticle process. Through the quantum electrodynamics method, the dipole emission density and system energy decayed equation were obtained. And it was predicted that the excitons decay into a very narrow mode when the exciton-cavity coupling becomes strong enough.
:In this paper,we introduced the dressed exciton model of the semiconductor micro cavity device.In the semiconductor quantum well(QW) of vertical cavity surface emission (VCSE) device,the excitons first coupled to the cavity through the intra electromagnetic field and formed the dressed excitons.Then these dressed excitons decayed into the vacuum cavity optical mode,as a multi particles process.Through the QED method,the dipole emission density and system energy decay equation were obtained.From the discussion of the solutions in three regimes,the superradiation and anisotropic decay rate were well understood.
Recently, cavity quantum electrodynamic (QED) effects in semiconductor microcavities have been of considerable interest since, in the weak-coupling regime they play an important role in selectively increasing spontaneous emission into the lasing mode of vertical-cavity surface-emitting lasers (VCSEL’s) [1,2], enabling low-threshold, high speed, and high efficiency. In a strong-coupling regime, the normal modes of the coupled system are superpositions of the exciton and cavity modes. Hence the impulsively excited system will evolve in time with the energy oscillating between the exciton and cavity modes. This is known as a vacuum-Rabi oscillation (VRO), with a frequency of Ω=d¯⋅E¯/@@h, where d¯ is the transition dipole moment of atoms and E¯ the vacuum-field strength. Of course, VRO are observable only when the cavity lifetime and exciton dephasing time are long enough compared to VRO period. Recently, Weisbuch et al. [3] have reported an observation of the normal-mode vacuum Rabi splitting in 2-D-exciton/planar-DBR microcavities. The observed splittings were as large as 6 meV in reflection and transmission spectra, implying 690-fs vacuum Rabi oscillations.
Semiconductor quantum microcavities are interesting physical systems in which fundamental interactions between light and excitons can be explored. For example, in the weak - coupling limit, modified excitonic spontaneous emission can be observed. In the strong-coupling limit, the cavity field modes and the quantum well exciton modes become coupled; the normal modes of the system are "cavity-polaritons" [1,2]. For in-plane wavevectors k// near zero, the normal modes are split by the dipole coupling between the excitons and the cavity vacuum field. This splitting is often referred to as a vacuum-Rabi splitting (VRS), as it has the same physical origin as the VRS observed in the interactions of atoms with single-mode cavities. The physical system in this work consists of a λ planar microcavity formed by two distributed-Bragg reflectors, with five GaAs quantum wells situated in the center of the cavity. In all the experiments described here, the exciton and cavity modes are on resonance (the low-field VRS is 6 meV for this sample).
After reviewing the important roles of excitons in nonlinear optical responses, we demonstrate mutual and quantum-mechanical control of radiation field and excitons on the same footing in a microcavity. First we introduce dressed excitons as bosons interacting coherently and reversibly with a radiation mode in the microcavity. Although the vacuum Rabi splitting of the dressed exciton is the same as that of dressed atom, the emission spectrum under strong pumping shows quartet structure different from the triplet of dressed atom. Secondly, the population dynamics of dressed excitons, i.e., one-dimensional polaritons in the mesoscopic system is solved and the dominant distribution on a single mode is demonstrated above the critical pumping.
Recent progress in vertical surface-emitting-laser-diode technology has raised considerable interest in cavity-QED effects in high-quality vertical semiconductor microcavities. When an excitonic transition and a single cavity mode are strongly coupled, the normal modes of the system are coupled modes split by the vacuum-Rabi frequency, corresponding in the time domain to an oscillation of the excitation between modes of exciton and photon character. Recently, the vacuum-Rabi splitting and preliminary observations of time-domain oscillation in semiconductor quantum microcavities have been reported.1,2 In this paper we investigate rigorously the time-domain vacuum-Rabi oscillation by femtosecond upconversion and pump-probe techniques.
The spectral response of a monolithic semiconductor quantum microcavity with quantum wells as the active medium displays mode splitting when the quantum wells and the optical cavity are in resonance. This effect can be seen as the Rabi vacuum-field splitting of the quantum-well excitons, or more classically as the normal-mode splitting of coupled oscillators, the excitons, and the electromagnetic field of the microcavity. An exciton oscillator strength of 4\ifmmode\times\else\texttimes\fi{}1012{10}^{12}1012 ${\mathrm{cm}}^{\mathrm{\ensuremath{-}}2}$ is deduced for 76-\AA{} quantum wells.