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International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz)

First observation of a THz photon echo

Stephen A. Lynch, P. Thornton Greenland, Alexander F. G. van der Meer, Benedict N Murdin, C. R. Pidgeon, Britta Redlich, N. Q. Vinh, G. Aeppli

Published Sep 1, 2010• 3 citations
Publisher

Abstract

We demonstrate THz photon echoes from silicon doped with phosphorus donors. We provide experimental evidence showing that the echo emerges at the predicted angle and that it arrives at our detector at the predicted time. We use this to demonstrate coherent control of the silicon donor states.
DOI
10.1109/icimw.2010.5612667

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It has long been known that shallow donors such as phosphorous and the other group-V elements, have a hydrogen-like optical spectrum. The main difference is that while the spectrum of atomic hydrogen lies in the visible band, the spectrum of shallow donors in silicon is downshifted to the THz frequency band. This is a direct consequence of the reduced Coulomb attraction seen by the loosely bound electron because the core electrons shield the positive donor atom nucleus, and because the electron is now moving in a dielectric material. While spectroscopy has already revealed much about the energy level structure, very little was known about the temporal dynamics of the system until now. We have used THz pulses from the FELIX free electron laser to probe these hydrogen-like levels. By exploiting the well-known pump-probe technique we have measured the characteristic lifetimes of the excited Rydberg states and found them to be of the order 200 ps. Then, by making subtle changes to the geometry of the pump-probe experimental setup we demonstrate the existence of a THz photon echo. The photon echo is a purely quantum phenomenon with no classical analogue, and it allows us to study the quantum state of the donor electron. We then show, using the photon echo, that it is possible to create a coherent superposition of the ground and excited state of the donor. Measuring the photon echo is important because it can also be used to measure a second important characteristic lifetime of the silicon-donor system, the phase decoherence time.
The electrical detection of spin echoes via echo tomography is used to observe coherent processes associated with the electrical readout of the spin state of phosphorus donor electrons in silicon near a SiO2 interface. Using the Carr-Purcell pulse sequence, an echo decay with a time constant of 1.7+/-0.2 micros is observed and discussed in terms of decoherence and recombination times. Electrical spin echo tomography thus can be used to study the dynamics of the spin-dependent transport processes, e.g., in realistic spin qubit devices for quantum information processing.
We present a theoretical analysis of a microwave spectroscopy experiment on a charge qubit defined by a P2+{\mathrm{P}}_{2}^{+}P2+​ donor pair in silicon, for which we calculate Hamiltonian parameters using the effective-mass theory of shallow donors. The master equation of the driven system in a dissipative system is solved to predict experimental outcomes. We describe how to calculate physical parameters of the system from such experimental results, including the dephasing time, T2{T}_{2}T2​, and the ratio of the resonant Rabi frequency to the relaxation rate. Finally we calculate probability distributions for experimentally relevant system parameters for a particular fabrication regime.