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Quantum Electronics and Laser Science Conference

Demonstration of THz all-optical modulation based on quantum coherent controls

S. H. Kim, Ki-Myung Hong, Byoung Seung HAM

Published Jun 1, 2003• 0 citations
OpenAlex

Abstract

Using quantum coherent controls we demonstrate THz all-optical modulation in GaAs/AlGaAs quantum wells. This demonstration overcomes population decay-time limited optical switching methods and opens a door to THz all-optical quantum information communications.

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arXiv:cond-mat/0312549•Applied Physics Letters•May 6, 2004•57 citations
This paper demonstrates the effects of applying magnetic and electric fields and physical dimensions alterations on AlGaAs/GaAs multiple quantum well (QW) slow light devices. Physical parameters include quantum well sizes and number of quantum wells. To the best of our knowledge, this is the first analysis of the effects of both applying magnetic/electric fields and physical parameters alterations and the first suggestion for matching the prefabrication and post fabrication tuning of the slow light devices based on excitonic population oscillations. The aim of our theoretical analysis is controlling the optical properties such as central frequency, bandwidth, and slow down factor (SDF) in slow light devices based on excitonic population oscillation to achieve better tuning. To reach these purposes, first we investigate the quantum well size and number of quantum wells alteration effects. Next, we analyze the effects of applying magnetic and electric fields to the multiple quantum well structure, separately. Finally, physical parameters and applied external fields are changed for measuring frequency shift and SDF for coherent population oscillation slow light devices. The results show the available central frequency shifts in about 1.6 THz at best. Also the SDF value improvement is about one order of magnitude. These results will be applicable for optical nonlinearity enhancements, all-optical signal processing, optical communications, all-optical switches, optical modulators, and variable true delays.
Summary form only given. Analysis of the physics of current optical switching techniques shows that the possible switching speed is less than THz even if one may use intersubband transitions of semiconductor quantum wells. The author demonstrates that the switching speed can be faster than the population relaxation time T/sub 1/ when quantum coherence is utilized. The observation of optical switching time is ten times faster than the population decay time. A spectral hole-burning crystal of Pr/sup 3+/ doped Y/sub 2/SiO/sub 5/ (Pr:YSO) is used for an initial experimental demonstration.