Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Log inSign up
Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Blog
Job Board
Q3AS

© 2026 Aqora Quantum S.A.S.

TermsPrivacyLegal Notice

arXiv:cond-mat/0512107 · Physical Review B

Theory of the microwave spectroscopy of a phosphorus-donor charge qubit in silicon: Coherent control in the Si:P quantum-computer architecture

Cameron J. Wellard, Lloyd C. L. Hollenberg, S. Das Sarma

Published Aug 3, 2006• 14 citations
arXivHTMLPDF

Abstract

We present a theoretical analysis of a microwave spectroscopy experiment on a charge qubit defined by a ${\mathrm{P}}_{2}^{+}$ donor pair in silicon, for which we calculate Hamiltonian parameters using the effective-mass theory of shallow donors. The master equation of the driven system in a dissipative system is solved to predict experimental outcomes. We describe how to calculate physical parameters of the system from such experimental results, including the dephasing time, ${T}_{2}$, and the ratio of the resonant Rabi frequency to the relaxation rate. Finally we calculate probability distributions for experimentally relevant system parameters for a particular fabrication regime.

DOI
10.1103/physrevb.74.075306

Related papers

Charge qubits in semiconductor quantum computer architecture: Tunnel coupling and decoherence

Xuedong Hu, Belita Koiller, S. Das Sarma

We consider charge qubits based on shallow donor electron states in silicon and coupled quantum dots in GaAs. Specifically, we study the feasibility of ${P}_{2}^{+}$ charge qubits in Si, focusing on single qubit properties in terms of tunnel coupling between the two phosphorus donors and qubit decoherence caused by electron-phonon interaction. By taking into consideration the multivalley structure of the Si conduction band, we show that intervalley quantum interference has important consequences for single-qubit operations of ${P}_{2}^{+}$ charge qubits. In particular, the valley interference leads to a tunnel-coupling strength distribution centered around zero. On the other hand, we find that the Si band structure does not dramatically affect the electron-phonon coupling and consequently, qubit coherence. We also critically compare charge qubit properties for $\mathrm{Si}:{P}_{2}^{+}$ and GaAs double quantum dot quantum computer architectures.

arXiv:cond-mat/0412340•Physical Review B•Jun 30, 2005•59 citations

Quantum Computation With Electron Spins of Phosphorous Donors in Silicon

Angbo Fang

The discovery of efficient quantum algorithms a decade ago has shown that a quantum computer encoding and processing information quantum mechanically, can solve important problems intractable with conventional computers. The invention of quantum error correction principle, makes quantum computation possibly fault-tolerant against the decoherence of information carriers. Thereafter, intensive research activities have been made toward the implementation of quantum computation with various realistic quantum systems. Among them, the most attractive implementation proposals are using silicon-based materials, which have the advantage of borrowing the existing ingenuity and resources accumulated during the development of modern microelectronics. In this dissertation we investigate several theoretical aspects of a silicon- based quantum computer in which qubits are represented by the spins of electrons bound to phosphorous donors in silicon. Encoding each qubit in terms of three neighboring donor electron spins, we can realize universal quantum gate operations with only the Heisenberg exchange coupling J S1 •S2 between neighboring donors. Therefore, studying the exchange coupling for a phosphorous donor pair in silicon is of central importance for providing the experimentalists with qualitative insights and quantitative guidance for building such a silicon quantum computer. After giving some general considerations on the quantum computer architecture, we develop the necessary theoretical tools. A multi-valley effective mass equation is derived and discussed, to handle impurities in a multi-valley semiconductor. Then we apply it to solve a single Si:P donor embedded in our quantum computer architecture. We show that the width of the silicon quantum well can significantly influence the energy splitting and charge distributions of the ground state. Oscillation of level splitting is observed as the quantum well width or donor position is varied at atomic scale. Elementary gate operations for 3-donor-spin qubits involve a neighboring pair of donors at each step. The exchange coupling in Heisenberg model hamiltonian, defined as the energy splitting of the lowest singlet and triplet states, has to be calculated from the realistic two-donor hamiltonian. We discuss several popular methods to solve the two-donor problem and develop an appropriate extended Hartree-Fock method that can give reliable results for a well-separated donor pair subject to tunable coupling. This method is first applied to a Si:P donor pair in the framework of hydrogenic effective mass theory, to study how to tune the exchange coupling with simple gate potentials. A followed study shows that under a parallel electric field the singlet and triplet states exhibit very different polarization behaviors. This difference can be exploited to measure the state of an electron spin. We also show that, a perpendicular electric field cannot tune the exchange coupling efficiently. Then we apply the realistic multi-valley effective mass equation, coupled with a realistic modeling of the potential generated by gate electrodes, to a pair of phosphorous donors in silicon quantum well. By varying the gate electrode voltages, the exchange coupling can be tuned with exponential efficiency in a wide range. We find that, for best performance, we need to set the quantum well width to be around 10 nm, and the donor separation to be around 10 a∗ b---- 24nm in the doping plane. We analyze in detail an adiabatic half-swap operation between neighboring donor spins. The gate operation time is estimated to be 0.2 ns, which satisfies the constraints put by the donor spin decoherence time and by the validity of adiabatic approximation. The interference between different valley components could lead to oscillations of exchange coupling as donor positions are shifted by occasion. We find the exchange oscillation persists even with only two relevant valleys for donors in a strongly-strained silicon quantum well. It is also shown that the oscillation induced by changing donor separation at atomic scale is strongly suppressed as donors approach each other. Finally, we study the entanglement issue in quantum computing context. We analyze the low-energy Hilbert space for a pair of qubits encoded by localized electron spins and suggest a suitable measure to describe the entanglement between qubits involving indistinguishable electrons and in the presence of leakage errors. The dynamics of inter-qubit entanglement during a gate operation is also studied.

•Oct 1, 2005•0 citations

Single Excitation Transfer in the Quantum Regime: A Spin-Based Solid-State Approach

Christoph W. Zollitsch

Realisation of strong coupling between a superconducting microwave resonator and an ensemble of phosphorus donor spins, contained in an isotopically purified silicon host crystal. Investigation of the dynamical properties of the coupled system at mK temperatures and ultra-low microwave powers. The relaxation and coherence times of the coupled system were extracted by pulsed microwave spectroscopy, with the result that the hybrid system's coherence time is enhanced compared to the uncoupled spin system.

•Jan 1, 2016•0 citations

Numerical method for determination of the NMR frequency of the single-qubit operation in a silicon-based solid-state quantum computer

Hon Tat Hui

A numerical method is introduced to determine the nuclear magnetic resonance frequency of a donor $(^{31}\mathrm{P})$ doped inside a silicon substrate under the influence of an applied electric field. This phosphorus donor has been suggested for operation as a qubit for the realization of a solid-state scalable quantum computer. The operation of the qubit is achieved by a combination of the rotation of the phosphorus nuclear spin through a globally applied magnetic field and the selection of the phosphorus nucleus through a locally applied electric field. To realize the selection function, it is required to know the relationship between the applied electric field and the change of the nuclear magnetic resonance frequency of phosphorus. In this study, based on the wave functions obtained by the effective-mass theory, we introduce an empirical correction factor to the wave functions at the donor nucleus. Using the corrected wave functions, we formulate a first-order perturbation theory for the perturbed system under the influence of an electric field. In order to calculate the potential distributions inside the silicon and the silicon dioxide layers due to the applied electric field, we use the multilayered Green's functions and solve an integral equation by the moment method. This enables us to consider more realistic, arbitrary shape, and three-dimensional qubit structures. With the calculation of the potential distributions, we have investigated the effects of the thicknesses of silicon and silicon dioxide layers, the relative position of the donor, and the applied electric field on the nuclear magnetic resonance frequency of the donor.

Physical Review B•Nov 8, 2006•11 citations

Coherent Microwave Control of Optically Addressable Donor Qubits in ZnO

Ethan R. Hansen, Dong-Rong Wu, Yixuan Li +6 more

Optically addressable shallow donors in ZnO combine efficient spin-selective optical transitions with the potential for long spin coherence in an isotopically purifiable host lattice, making them an attractive platform for spin-photon quantum technologies. A key missing capability, however, has been coherent control beyond the small-angle rotations accessible with ultrafast optical pulses. Here we demonstrate coherent microwave control of implanted $^{115}\mathrm{In}$ donors in ZnO. Resonant optical pumping initializes and reads out the donor electron spin. Pulsed optically-detected magnetic resonance resolves the ten hyperfine transitions associated with the coupled $^{115}\mathrm{In}$ nuclear spin (I = 9/2) and reveals optical-pumping-induced nuclear spin polarization. We observe coherent Rabi oscillations with a maximum Rabi frequency of $Ω/2π= 36.2 \pm 0.7$\;MHz, corresponding to a $π$-pulse time of 13.8$\pm$0.3\;ns, and characterize the spin coherence using Ramsey, Hahn echo and dynamical-decoupling measurements. Unexpectedly, the measured coherence is substantially shorter than reported in previous optical studies of donor spins in ZnO at high magnetic field. Control experiments rule out several simple explanations including microwave heating and instantaneous diffusion from the driven donor ensemble, leaving an open question regarding the origin of decoherence at low magnetic field in microwave-controlled ZnO donors. These results establish microwave control of ZnO donor qubits with resonant optical access to specific donor species. More broadly, they demonstrate that coherent microwave control can be achieved in optically addressable spin systems with nanosecond-scale inhomogeneous dephasing, enabling field-, temperature-, and materials-dependent studies of coherence-limiting mechanisms and the development of optically interfaced electron-nuclear spin registers.

quant-pharXiv:2606.19016•Jun 18, 2026

Resonant pulse operations on the buried donor charge qubits in semiconductors

L. А. Openov

A scheme is proposed for rotations of a double-donor charge qubit whose logical states are defined by the two lowest energy states of a single electron localized around one or another donor. It is shown that making use of the microwave pulses tuned to the resonance with an auxiliary excited molecular level allows for implementation of various one-qubit operations in very short times. Decoherence effects are analyzed by the example of the ${\mathrm{P}}_{2}^{+}:\mathrm{Si}$ system and shown to be weak enough for experimental realization of this scheme being possible.

arXiv:cond-mat/0411605•Physical Review B•Dec 23, 2004•19 citations
We present a theoretical analysis of a microwave spectroscopy experiment on a charge qubit defined by a P2+{\mathrm{P}}_{2}^{+}P2+​ donor pair in silicon, for which we calculate Hamiltonian parameters using the effective-mass theory of shallow donors. The master equation of the driven system in a dissipative system is solved to predict experimental outcomes. We describe how to calculate physical parameters of the system from such experimental results, including the dephasing time, T2{T}_{2}T2​, and the ratio of the resonant Rabi frequency to the relaxation rate. Finally we calculate probability distributions for experimentally relevant system parameters for a particular fabrication regime.
We consider charge qubits based on shallow donor electron states in silicon and coupled quantum dots in GaAs. Specifically, we study the feasibility of P2+{P}_{2}^{+}P2+​ charge qubits in Si, focusing on single qubit properties in terms of tunnel coupling between the two phosphorus donors and qubit decoherence caused by electron-phonon interaction. By taking into consideration the multivalley structure of the Si conduction band, we show that intervalley quantum interference has important consequences for single-qubit operations of P2+{P}_{2}^{+}P2+​ charge qubits. In particular, the valley interference leads to a tunnel-coupling strength distribution centered around zero. On the other hand, we find that the Si band structure does not dramatically affect the electron-phonon coupling and consequently, qubit coherence. We also critically compare charge qubit properties for Si:P2+\mathrm{Si}:{P}_{2}^{+}Si:P2+​ and GaAs double quantum dot quantum computer architectures.
The discovery of efficient quantum algorithms a decade ago has shown that a quantum computer encoding and processing information quantum mechanically, can solve important problems intractable with conventional computers. The invention of quantum error correction principle, makes quantum computation possibly fault-tolerant against the decoherence of information carriers. Thereafter, intensive research activities have been made toward the implementation of quantum computation with various realistic quantum systems. Among them, the most attractive implementation proposals are using silicon-based materials, which have the advantage of borrowing the existing ingenuity and resources accumulated during the development of modern microelectronics. In this dissertation we investigate several theoretical aspects of a silicon- based quantum computer in which qubits are represented by the spins of electrons bound to phosphorous donors in silicon. Encoding each qubit in terms of three neighboring donor electron spins, we can realize universal quantum gate operations with only the Heisenberg exchange coupling J S1 •S2 between neighboring donors. Therefore, studying the exchange coupling for a phosphorous donor pair in silicon is of central importance for providing the experimentalists with qualitative insights and quantitative guidance for building such a silicon quantum computer. After giving some general considerations on the quantum computer architecture, we develop the necessary theoretical tools. A multi-valley effective mass equation is derived and discussed, to handle impurities in a multi-valley semiconductor. Then we apply it to solve a single Si:P donor embedded in our quantum computer architecture. We show that the width of the silicon quantum well can significantly influence the energy splitting and charge distributions of the ground state. Oscillation of level splitting is observed as the quantum well width or donor position is varied at atomic scale. Elementary gate operations for 3-donor-spin qubits involve a neighboring pair of donors at each step. The exchange coupling in Heisenberg model hamiltonian, defined as the energy splitting of the lowest singlet and triplet states, has to be calculated from the realistic two-donor hamiltonian. We discuss several popular methods to solve the two-donor problem and develop an appropriate extended Hartree-Fock method that can give reliable results for a well-separated donor pair subject to tunable coupling. This method is first applied to a Si:P donor pair in the framework of hydrogenic effective mass theory, to study how to tune the exchange coupling with simple gate potentials. A followed study shows that under a parallel electric field the singlet and triplet states exhibit very different polarization behaviors. This difference can be exploited to measure the state of an electron spin. We also show that, a perpendicular electric field cannot tune the exchange coupling efficiently. Then we apply the realistic multi-valley effective mass equation, coupled with a realistic modeling of the potential generated by gate electrodes, to a pair of phosphorous donors in silicon quantum well. By varying the gate electrode voltages, the exchange coupling can be tuned with exponential efficiency in a wide range. We find that, for best performance, we need to set the quantum well width to be around 10 nm, and the donor separation to be around 10 a∗ b---- 24nm in the doping plane. We analyze in detail an adiabatic half-swap operation between neighboring donor spins. The gate operation time is estimated to be 0.2 ns, which satisfies the constraints put by the donor spin decoherence time and by the validity of adiabatic approximation. The interference between different valley components could lead to oscillations of exchange coupling as donor positions are shifted by occasion. We find the exchange oscillation persists even with only two relevant valleys for donors in a strongly-strained silicon quantum well. It is also shown that the oscillation induced by changing donor separation at atomic scale is strongly suppressed as donors approach each other. Finally, we study the entanglement issue in quantum computing context. We analyze the low-energy Hilbert space for a pair of qubits encoded by localized electron spins and suggest a suitable measure to describe the entanglement between qubits involving indistinguishable electrons and in the presence of leakage errors. The dynamics of inter-qubit entanglement during a gate operation is also studied.
Realisation of strong coupling between a superconducting microwave resonator and an ensemble of phosphorus donor spins, contained in an isotopically purified silicon host crystal. Investigation of the dynamical properties of the coupled system at mK temperatures and ultra-low microwave powers. The relaxation and coherence times of the coupled system were extracted by pulsed microwave spectroscopy, with the result that the hybrid system's coherence time is enhanced compared to the uncoupled spin system.
A numerical method is introduced to determine the nuclear magnetic resonance frequency of a donor (31P)(^{31}\mathrm{P})(31P) doped inside a silicon substrate under the influence of an applied electric field. This phosphorus donor has been suggested for operation as a qubit for the realization of a solid-state scalable quantum computer. The operation of the qubit is achieved by a combination of the rotation of the phosphorus nuclear spin through a globally applied magnetic field and the selection of the phosphorus nucleus through a locally applied electric field. To realize the selection function, it is required to know the relationship between the applied electric field and the change of the nuclear magnetic resonance frequency of phosphorus. In this study, based on the wave functions obtained by the effective-mass theory, we introduce an empirical correction factor to the wave functions at the donor nucleus. Using the corrected wave functions, we formulate a first-order perturbation theory for the perturbed system under the influence of an electric field. In order to calculate the potential distributions inside the silicon and the silicon dioxide layers due to the applied electric field, we use the multilayered Green's functions and solve an integral equation by the moment method. This enables us to consider more realistic, arbitrary shape, and three-dimensional qubit structures. With the calculation of the potential distributions, we have investigated the effects of the thicknesses of silicon and silicon dioxide layers, the relative position of the donor, and the applied electric field on the nuclear magnetic resonance frequency of the donor.
Optically addressable shallow donors in ZnO combine efficient spin-selective optical transitions with the potential for long spin coherence in an isotopically purifiable host lattice, making them an attractive platform for spin-photon quantum technologies. A key missing capability, however, has been coherent control beyond the small-angle rotations accessible with ultrafast optical pulses. Here we demonstrate coherent microwave control of implanted 115In^{115}\mathrm{In}115In donors in ZnO. Resonant optical pumping initializes and reads out the donor electron spin. Pulsed optically-detected magnetic resonance resolves the ten hyperfine transitions associated with the coupled 115In^{115}\mathrm{In}115In nuclear spin (I = 9/2) and reveals optical-pumping-induced nuclear spin polarization. We observe coherent Rabi oscillations with a maximum Rabi frequency of Ω/2π=36.2±0.7Ω/2π= 36.2 \pm 0.7Ω/2π=36.2±0.7\;MHz, corresponding to a πππ-pulse time of 13.8$\pm$0.3\;ns, and characterize the spin coherence using Ramsey, Hahn echo and dynamical-decoupling measurements. Unexpectedly, the measured coherence is substantially shorter than reported in previous optical studies of donor spins in ZnO at high magnetic field. Control experiments rule out several simple explanations including microwave heating and instantaneous diffusion from the driven donor ensemble, leaving an open question regarding the origin of decoherence at low magnetic field in microwave-controlled ZnO donors. These results establish microwave control of ZnO donor qubits with resonant optical access to specific donor species. More broadly, they demonstrate that coherent microwave control can be achieved in optically addressable spin systems with nanosecond-scale inhomogeneous dephasing, enabling field-, temperature-, and materials-dependent studies of coherence-limiting mechanisms and the development of optically interfaced electron-nuclear spin registers.
A scheme is proposed for rotations of a double-donor charge qubit whose logical states are defined by the two lowest energy states of a single electron localized around one or another donor. It is shown that making use of the microwave pulses tuned to the resonance with an auxiliary excited molecular level allows for implementation of various one-qubit operations in very short times. Decoherence effects are analyzed by the example of the P2+:Si{\mathrm{P}}_{2}^{+}:\mathrm{Si}P2+​:Si system and shown to be weak enough for experimental realization of this scheme being possible.