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International Conference on Ultrafast Phenomena

Dynamical Coupling of Rabi Oscillation to Coherent Phonon in Semiconductor Microcavities

K. Mizoguchi, S. Yoshino, Goro Oohata

Published Jan 1, 2014• 0 citations
Publisher

Abstract

We report on the dynamical coupling between Rabi oscillation and coherent phonon in CuCl semiconductor microcavities, which induces the time-dependent frequency-shift of the coherent phonon mode driven by Rabi oscillation.
DOI
10.1364/up.2014.07.mon.c.4

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International Conference on Ultrafast Phenomena•Jan 1, 1994•0 citations
We report on dynamical interference between short-lived Rabi oscillations and long-lived coherent phonons in CuCl semiconductor microcavities resulting from the coupling between the two oscillations. The Fourier-transformed spectra of the time-domain signals obtained from semiconductor microcavities by using a pump-probe technique show that the intensity of the coherent longitudinal optical phonon of CuCl is enhanced by increasing that of the Rabi oscillation, which indicates that the coherent phonon is driven by the Rabi oscillation through the Fröhlich interaction. Moreover, as the Rabi oscillation frequency decreases upon crossing the phonon frequency, the spectral profile of the coherent phonon changes from a peak to a dip with an asymmetric structure. The continuous wavelet transformation reveals that these peak and dip structures originate from constructive and destructive interference between Rabi oscillations and coherent phonons, respectively. We demonstrate that the asymmetric spectral structures in relation to the frequency detuning are well reproduced by using a classical coupled oscillator model on the basis of dynamical Fano-like interference.
Recent progress in vertical surface-emitting-laser-diode technology has raised considerable interest in cavity-QED effects in high-quality vertical semiconductor microcavities. When an excitonic transition and a single cavity mode are strongly coupled, the normal modes of the system are coupled modes split by the vacuum-Rabi frequency, corresponding in the time domain to an oscillation of the excitation between modes of exciton and photon character. Recently, the vacuum-Rabi splitting and preliminary observations of time-domain oscillation in semiconductor quantum microcavities have been reported.1,2 In this paper we investigate rigorously the time-domain vacuum-Rabi oscillation by femtosecond upconversion and pump-probe techniques.
Recently, cavity quantum electrodynamic (QED) effects in semiconductor microcavities have been of considerable interest since, in the weak-coupling regime they play an important role in selectively increasing spontaneous emission into the lasing mode of vertical-cavity surface-emitting lasers (VCSEL’s) [1,2], enabling low-threshold, high speed, and high efficiency. In a strong-coupling regime, the normal modes of the coupled system are superpositions of the exciton and cavity modes. Hence the impulsively excited system will evolve in time with the energy oscillating between the exciton and cavity modes. This is known as a vacuum-Rabi oscillation (VRO), with a frequency of Ω=d¯⋅E¯/@@h, where d¯ is the transition dipole moment of atoms and E¯ the vacuum-field strength. Of course, VRO are observable only when the cavity lifetime and exciton dephasing time are long enough compared to VRO period. Recently, Weisbuch et al. [3] have reported an observation of the normal-mode vacuum Rabi splitting in 2-D-exciton/planar-DBR microcavities. The observed splittings were as large as 6 meV in reflection and transmission spectra, implying 690-fs vacuum Rabi oscillations.