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Physica B Condensed Matter

Metal-insulator transition in correlated systems: A new numerical approach

Daniel J. García, E. Miranda, K. Hallberg, Marcelo J. Rozenberg

Published Apr 23, 2007• 8 citations
Publisher
DOI
10.1016/j.physb.2007.04.049

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In order to investigate photoinduced insulator-metal transitions observed in correlated electron systems, we propose a new theoretical method, where we combine a Floquet-matrix method for AC-driven systems with the dynamical mean-field theory. The method can treat nonequilibrium steady states exactly beyond the linear-response regime. We have applied the method to the Falicov-Kimball model coupled to AC electric fields, and numerically obtained the spectral function, the nonequilibrium distribution function and the current-voltage characteristic. The results show that intense AC fields indeed drive Mott-like insulating states into photoinduced metallic states in a nonlinear way.
We study numerically the effects of classical magnetic impurities on the Anderson metal-insulator transition. We find that a small concentration of Heisenberg impurities enhances the critical disorder amplitude Wc{W}_{\mathrm{c}}Wc​ with increasing exchange coupling strength JJJ. The resulting scaling with JJJ is analyzed which supports an anomalous scaling prediction by Wegner due to the combined breaking of time-reversal and spin-rotational symmetry. Moreover, we find that the presence of magnetic impurities lowers the critical correlation length exponent $\ensuremath{\nu}$ and enhances the multifractality parameter ${\ensuremath{\alpha}}_{0}$. The new value of $\ensuremath{\nu}$ improves the agreement with the value measured in experiments on the metal-insulator transition (MIT) in doped semiconductors like phosphor-doped silicon, where a finite density of magnetic moments is known to exist in the vicinity of the MIT. The results are obtained by a finite-size scaling analysis of the geometric mean of the local density of states which is calculated by means of the kernel polynomial method. We establish this combination of numerical techniques as a method to obtain critical properties of disordered systems quantitatively.
Quantum kkk-core percolation is the study of quantum transport on kkk-core percolation clusters where each occupied bond must have at least kkk occupied neighboring bonds. As the bond occupation probability ppp is increased from zero to unity, the system undergoes a transition from an insulating phase to a metallic phase. When the length scale for the disorder ld{l}_{d}ld​ is much greater than the coherence length lc{l}_{c}lc​, earlier analytical calculations of quantum conduction on the Bethe lattice demonstrated that for k=3k=3k=3 the metal-insulator transition (MIT) is discontinuous, suggesting a new type of disorder-driven quantum MITs. Here, we numerically compute the level spacing distribution as a function of bond occupation probability ppp and system size on a Bethe-like lattice. The level spacing analysis suggests that for k=0k=0k=0, pq{p}_{q}pq​, the quantum percolation critical probability, is greater than pc{p}_{c}pc​, the geometrical percolation critical probability, and the transition is continuous. In contrast, for k=3k=3k=3, pq=pc{p}_{q}={p}_{c}pq​=pc​, and the transition is discontinuous such that these numerical findings are consistent with our previous work to reiterate a new random first-order phase transition and therefore a new universality class of disorder-driven quantum MITs.