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Chinese Physics Letters

Study of Optical Nonlinearity in Hydrogenated Amorphous Silicon Carbide Films

Jun Xu, Kunji Chen, Xinfan Huang, Duan Feng, Dakui Zhang, Qun Li, Wenyao Wang, Peihua Qiu

Published Mar 1, 1993• 0 citations
Publisher

Abstract

Hydrogenated amorphous silicon carbide (a-SiC x :H) films were prepared by glow discharge technique with gas mixture of silane (SiH 4 ) and methane (CH 4 ). The room-temperature optical bistability was demonstrated in uncoated a-SiC x :H films at the excitation wavelength about 532 nm. The switch-on intensity of device is about 0.8 MW/cm 2 and the switching time is in the nanosecond scale. The physical origin of the optical nonlinearity in these materials is also discussed.

DOI
10.1088/0256-307x/10/3/007

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Hydrogenated amorphous silicon carbide (a-SiC x :H) films were prepared by glow discharge technique with gas mixture of silane (SiH 4 ) and methane (CH 4 ). The room-temperature optical bistability was demonstrated in uncoated a-SiC x :H films at the excitation wavelength about 532 nm. The switch-on intensity of device is about 0.8 MW/cm 2 and the switching time is in the nanosecond scale. The physical origin of the optical nonlinearity in these materials is also discussed.
We demonstrate high efficiency wavelength conversion via four wave mixing in amorphous silicon carbide ring resonators with a loaded quality factor of 70 000. Owing to the high quality factor and high nonlinearity of amorphous silicon carbide, −21 dB conversion efficiency is achieved with 15 mW pump power. Moreover, the thermo-optic coefficient (TOC) of amorphous silicon carbide is measured to be 1.4 × 10−4/°C at telecommunication wavelengths. Taking advantage of the high TOC, we demonstrate optical bistability in the silicon carbide ring resonator. This work presents amorphous silicon carbide as a promising platform for applications in optical signal processing.
All-optical bistability in luminescence of thin (⩽ 10 μm) CdS and CdS: Cu sprayed films on pyrex® was studied in the range of 700-1000 nm. The films were investigated between 80-210 K and excited by the 514.5 nm Ar + - laser line. The measurements were performed in transmission or reflection geometries using a monochromator or cut-off filters, respectively. The pronounced dependence of the luminescence intensity on temperature in the near infrared is found to be the origin of bistability in luminescence. Furthermore, we demonstrate that the loop contrasts depend on the wavelength investigated. By the application of this feature, we present, to the best of our knowledge for the first time, a possibility to measure doping concentrations of a semiconductor with a bistable device. Finally, new concepts are discussed to use luminescence bistability in all-optical or hybrid data links.
Saturating absorption and optical bistability (OB) with ns switching time in Langmuir-Blodgett (LB) films of phthalocyanines derivatives on reflection have been studied at room temperature (RT) in the near ultraviolet region for the first time. The saturating intensity (Is) and switching intensity for the OB at 337.1 nm are about 1 MW/cm2 and 5 MW/cm2, respectively. The experimental results show that the major nonlinear and positive feedback mechanisms for the OB are the change of refractive index caused by the saturating absorption and the simple F-P cavity due to the natural faces of the sample, respectively.