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Japanese Journal of Applied Physics

Properties of Step-Edge Microbridge Josephson Junction Mixer Fabricated by YBaCuO Thin Film

Yoshito Fukumoto, Hiroshi Kajikawa, Rikuo Ogawa, Yoshio Kawate

Published Sep 1, 1992• 9 citations
Publisher

Abstract

The conversion efficiency and minimum detection power of a step-edge microbridge Josephson junction mixer (SEJJ mixer) were evaluated for both fundamental mixing and harmonic mixing. The SEJJ was fabricated by a YBaCuO thin film and all of the circuits inside the mixer were made from microstrip line circuits in order to reduce the microwave propagation losses. The conversion efficiencies (η) were -31 dB, -46 dB and -53 dB for fundamental mixing, second harmonic mixing and third harmonic mixing, respectively. The dependence of η on the harmonic number (N) was expressed as η\proptN -4.6 for N≦3. The minimum detection power (MDP) of -60 dBm (1.0 nW) was obtained in fundamental mixing, with a linear dynamic range of more than 40 dB.

DOI
10.1143/jjap.31.l1239

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Japanese Journal of Applied Physics•Aug 1, 1996•1 citation
The conversion efficiency and minimum detection power of a step-edge microbridge Josephson junction mixer (SEJJ mixer) were evaluated for both fundamental mixing and harmonic mixing. The SEJJ was fabricated by a YBaCuO thin film and all of the circuits inside the mixer were made from microstrip line circuits in order to reduce the microwave propagation losses. The conversion efficiencies (η) were -31 dB, -46 dB and -53 dB for fundamental mixing, second harmonic mixing and third harmonic mixing, respectively. The dependence of η on the harmonic number (N) was expressed as η\proptN -4.6 for N≦3. The minimum detection power (MDP) of -60 dBm (1.0 nW) was obtained in fundamental mixing, with a linear dynamic range of more than 40 dB.
Current-voltage characteristics and microwave mixing properties of step-edge microbridge Josephson junctions (SEJJs) made of YBaCuO thin films were systematically investigated. The step-edge was formed on the surface of a MgO(100) substrate employing the common photolithograph and wet-etching techniques. YBaCuO thin film was deposited by the off-axis sputtering method, and the microbridge junctions were fabricated so as to cross the step-edge. The SEJJs showed typical DC and AC characteristics which were explained by the resistively shunted junction (RSJ) model. Mixing experiments were carried out in the K-band microwave region. An intermediate frequency (IF) output with the frequency range of 20 MHz∼2.0 GHz was successfully obtained.
Millimeter-wave detection was investigated using a step-edge microbridge Josephson junction fabricated by a YBaCuO thin film for both the video detection and harmonic mixing detection. Current–voltage (I–V) characteristics, which could be described by the resistively shunted junction (RSJ) model, were obtained up to 70 K with the IcR product of 150 μV at 70 K. The responsivity and noise equivalent input power were calculated as 2400 W/V and 4.4×10−14 W/√Hz, respectively, in the video detection assuming the RSJ model approximation. Clear dependence of the intermediate frequency output on the applied dc bias voltage was observed in the harmonic mixing detection with the harmonic numbers of 5–16, reflecting the change of dynamic resistance at the constant voltage steps induced by the local oscillation signal on the I–V curve. A minimum detection power of −59.4 dB m and a conversion efficiency (η) of −49.6 dB were obtained for the harmonic number (N) of 5 at 60 K. The relationship between the η and N was expressed as η∝N−2.2.
Current-voltage characteristics and microwave mixing properties of step-edge microbridge Josephson junctions (SEJJs) made of YBaCuO thin films were systematically investigated. The step-edge was formed on the surface of a MgO(100) substrate employing the common photolithograph and wet-etching techniques. YBaCuO thin film was deposited by the off-axis sputtering method, and the microbridge junctions were fabricated so as to cross the step-edge. The SEJJs showed typical DC and AC characteristics which were explained by the resistively shunted junction (RSJ) model. Mixing experiments were carried out in the K-band microwave region. An intermediate frequency (IF) output with the frequency range of 20 MHz~2.0 GHz was successfully obtained.
Millimeter-wave detection was investigated using a step-edge microbridge Josephson junction (SEJJ) fabricated by a sputter-deposited DyBaCuO thin film. The SEJJ exhibited a clear response to 110-GHz millimeter-wave irradiation, and Shapiro steps could be observed up to the seventh step. Harmonic mixing detection was successfully achieved using microwaves of 6 approximately 22 GHz as a local oscillation signal. The dependence of conversion efficiency ( eta ) on the harmonic number was expressed as eta varies as N/sup -3.3/. The detector was operative at temperatures up to 65 K, although the efficiency rapidly decreased above 50 K.>
Characteristics of the K-band microwave mixing using a YBaCuO step-edge microbridge Josephson junction were systematically investigated, and the optimum bias conditions were experimentally determined. A large intermediate frequency (IF) output signal was observed at every midway between the Shapiro steps, and the maximum IF output was obtained between the 0th and 1st steps (0-1) for the local oscillation (LO) power level of I 0/I c=0.2-0.3 (absolute LO power of -49.9 dBm). The maximum conversion efficiency was estimated to be -26.6 dB. Although the IF output (0-1) was observed for a wide range of LO power, it vanished or decreased radically under some peculiar conditions (I 0/I c?0 and ?(I 0/I c)/?I LO?0). These characteristics were qualitatively accounted for by the basic Josephson-mixing theory.
Effects on microwave detection of a series-connected Josephson junction array are examined. The series-connected 10 step-edge Josephson junctions (10-SEJJs) are fabricated by Y1Ba2Cu3O7- x thin films on MgO substrates. Their responsivities as microwave broad-band detectors are evaluated by constructing microstrip circuits for measuring transmission and return power. 948 V/W is obtained at 17 K. This value is several times greater than 139 V/W of a single SEJJ at 17 K. Additionally, the return power from 10-SEJJs is less than that from the single SEJJ, as the bias current or the temperature increases. The small return power is attributed to the increase in the normal resistance of the SEJJ.