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IEEE Transactions on Magnetics

Experimental results of a vortex flow transistor amplifier

David P. McGinnis, Gert K. G. Hohenwarter, M.A. Ketkar, James B. Beyer, J.E. Nordman

Published Mar 1, 1989• 11 citations
Publisher

Abstract

A niobium-based superconducting amplifier consisting of a series array of 60 vortex flow transistors (VFT) was fabricated and tested. Each VFT consisted of a long Josephson junction biased in the flux flow state, magnetically coupled to a current based on a distributed amplifier configuration. The transresistance of the amplifier in a 50- Omega environment for frequencies up to 1 MHz was measured. The transresistance of the array was less than the expected value calculated from measurements obtained on a single VFT. The difference was probably due to nonuniformities in the fabrication process, which caused some of the junctions not to be biased in the flux flow state or receive the same amount of magnetic field from the control line. However, measurements of the array showed that a large number of VFTs could be connected in series and simultaneously be biased into the flux flow state.>

DOI
10.1109/20.92524

Related papers

Review of microwave distributed superconducting vortex-flow transistor amplifiers

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The dynamics of fluxons in the vortex flow transistor (VFT) has been much studied. The fluxon transit time determines the fundamental speed limit of operation. Since fluxons can travel at the velocity of electromagnetic waves in the junction, the VFT has the potential for operating in high frequency systems ( ≈ 100 GHz). However, owing to the low input and output impedance of the VFT, use of the device in a conventional circuit would be quite limited. A distributed amplifier configuration consisting of many VFTs has been proposed to remedy the problems of low impedance levels. However, the realization of such an amplifier circuit at microwave or millimetre wave frequencies depends on obtaining a circuit model. In this paper, microwave superconducting VFT distributed amplifiers using the balanced control technique is reviewed. This kind of amplifier has the advantage that the capacitive feedthrough effect is decreased to a negligible extent. This is the major limiting factor for high frequency applications. The self-field effect which makes the current step inclined is reduced by injecting bias current only around the region of one end of the junction thus obtaining steeper I- V characteristics. With the asymmetric geometry, the slope of the current step is about one hundred times steeper than those obtained with the conventional overlap geometry. Owing to the diamagnetic behaviour of the Josephson junction, a little of the magnetic field induced by the current in the control line is allowed to penetrate the junction. Thus, the transresistance rm of a VFT is very small. Some methods for maximizing rm and minimizing the output impedance r0 also appear in this review. The feasibility of fabricating VFT distributed amplifiers using low-Tc superconducting material has been demonstrated. The power gain of the amplifier can be as high as 15 dB with a flat frequency response.

International Journal of Electronics•Sep 1, 1992•3 citations

DC and AC Responses of Josephson Vortex Flow Transistors with High Tc Superconducting Thin Films

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We fabricated Josephson vortex flow transistors (JVFTs) with a parallel array of Josephson junctions that were prepared using c-axis-oriented 100-nm-thick YBa 2 Cu 3 O 7-δ (YBCO) thin films grown on 24° bicrystal MgO (100) substrates. We observed clear modulations of the critical current and the flow voltage with DC current input to the control line that was inductively coupled to the array of junctions. From the results, we estimated the parameters of the device, e.g., the mutual inductance and the self-inductance, and calculated the operation frequency at which the device potentially exhibited these parameters. Moreover, the current gain and the transresistance were evaluated and found to be 0.5 and 0.15 Ω, respectively. In addition, we observed the high-frequency responses of the JVFT to the input AC current of the sine wave or the square pulse wave. A clear oscillation of the output voltage could be observed with a 1 MHz sine wave and 250 kHz square pulse wave. We also discussed the feasibility of higher frequency operation by using it as an input interface for a single flux quantum (SFQ) logic circuit.

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Vector S-parameter measurements of the superconducting vortex flow transistor

David P. McGinnis, James B. Beyer, J.E. Nordman

Vector S-parameter measurements of the superconducting vortex flow transistor (VFT) are presented. The measurements were obtained for frequencies up to 100 MHz on VFTs that had a calculated transmit-time cutoff frequency of 5 GHz. An equivalent circuit model that includes calculations of the VFT transresistance, input inductance, and feedthrough capacitance is derived from these measurements. The measurements are limited to an upper frequency of 100 MHz due to crosstalk in the low-impedance system.>

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Eck peak in underdamped discrete superconducting vortex flow devices

Herre S. J. van der Zant, Terry P. Orlando

We have measured vortex motion in a long one-dimensional array of small underdamped niobium tunnel junctions which are coupled in parallel by superconducting wires. In the current-voltage characteristic, a resonant step occurs similar to the Eck peak in long continuous junctions. Due to the discrete nature of our samples, the voltage of this resonant step follows a sinusoidal dependence on the magnetic field rather than the linear dependence found in long continuous junctions. With a control current applied parallel to the array of junctions, the device can be operated as a vortex-flow transistor or as a tunable vortex-flow oscillator. Compared to long continuous junctions, the performance of discrete transistors is better with regard to the threshold current and transresistance, but worse with regard to the output resistance. Discrete oscillators have the advantage over their continuous counterparts in that the output impedance is of the order of 10 Ω. Numerical simulations indicate power levels around 0.5 μW and frequencies above 500 GHz.

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J. Martens, T. E. Zipperian, VINCENT M. HIETALA +4 more

Superconducting flux flow transistors (SFFTs) have recently been used in a W-band amplifier operating from 91 to 98 GHz and in an invertor configured as an oscillator operating at 86 GHz. These SFFTs consist of three weakened YBaCuO links in parallel. The links are about 1- mu m wide, 3- mu m long, and 20-nm thick (relative to an electrode thickness of about 200 nm). The links are biased above their local critical field so that vortices flow through the links in accordance with the Lorentz-type force supplied by the bias. The 'gate' is a control line located proximate to the link system and supplies a local magnetic field. Above a critical current, flux flow begins and the device enters the active region characterized by a transresistive response to control current and a finite output resistance. A flux flow invertor circuit can consist of 2 SFFTs: both devices are in parallel with the current bias and the input is a control current to one device.

IEEE Transactions on Electron Devices•Jan 1, 1992•0 citations

Vortices in long Josephson junctions

J.E. Nordman, James B. Beyer

Research during the initial year of this grant concentrated on fabrication and modelling of long Josephson junction structures. A particular effort was made to understand the basic operating mechanisms of a type of superconducting transistor, the vortex flow transistor, and to optimize its circuit performance. Fabrication techniques were developed using niobium and lead superconductors. These techniques allow rapid production of a variety of device shapes. An optimization of geometric configuration was made to produce the most desirable device characteristics. Amplification was observed at low frequencies and initial coupling circuit designs were made to enable high frequency measurement. Development of potentially more versatile fabrication techniques using niobium and niobium nitride was also begun, as was a simulation study aimed primarily at understanding spatially nonuniform long junction structures.

Final Report•Feb 1, 1989•0 citations
A niobium-based superconducting amplifier consisting of a series array of 60 vortex flow transistors (VFT) was fabricated and tested. Each VFT consisted of a long Josephson junction biased in the flux flow state, magnetically coupled to a current based on a distributed amplifier configuration. The transresistance of the amplifier in a 50- Omega environment for frequencies up to 1 MHz was measured. The transresistance of the array was less than the expected value calculated from measurements obtained on a single VFT. The difference was probably due to nonuniformities in the fabrication process, which caused some of the junctions not to be biased in the flux flow state or receive the same amount of magnetic field from the control line. However, measurements of the array showed that a large number of VFTs could be connected in series and simultaneously be biased into the flux flow state.>
The dynamics of fluxons in the vortex flow transistor (VFT) has been much studied. The fluxon transit time determines the fundamental speed limit of operation. Since fluxons can travel at the velocity of electromagnetic waves in the junction, the VFT has the potential for operating in high frequency systems ( ≈ 100 GHz). However, owing to the low input and output impedance of the VFT, use of the device in a conventional circuit would be quite limited. A distributed amplifier configuration consisting of many VFTs has been proposed to remedy the problems of low impedance levels. However, the realization of such an amplifier circuit at microwave or millimetre wave frequencies depends on obtaining a circuit model. In this paper, microwave superconducting VFT distributed amplifiers using the balanced control technique is reviewed. This kind of amplifier has the advantage that the capacitive feedthrough effect is decreased to a negligible extent. This is the major limiting factor for high frequency applications. The self-field effect which makes the current step inclined is reduced by injecting bias current only around the region of one end of the junction thus obtaining steeper I- V characteristics. With the asymmetric geometry, the slope of the current step is about one hundred times steeper than those obtained with the conventional overlap geometry. Owing to the diamagnetic behaviour of the Josephson junction, a little of the magnetic field induced by the current in the control line is allowed to penetrate the junction. Thus, the transresistance rm of a VFT is very small. Some methods for maximizing rm and minimizing the output impedance r0 also appear in this review. The feasibility of fabricating VFT distributed amplifiers using low-Tc superconducting material has been demonstrated. The power gain of the amplifier can be as high as 15 dB with a flat frequency response.
We fabricated Josephson vortex flow transistors (JVFTs) with a parallel array of Josephson junctions that were prepared using c-axis-oriented 100-nm-thick YBa 2 Cu 3 O 7-δ (YBCO) thin films grown on 24° bicrystal MgO (100) substrates. We observed clear modulations of the critical current and the flow voltage with DC current input to the control line that was inductively coupled to the array of junctions. From the results, we estimated the parameters of the device, e.g., the mutual inductance and the self-inductance, and calculated the operation frequency at which the device potentially exhibited these parameters. Moreover, the current gain and the transresistance were evaluated and found to be 0.5 and 0.15 Ω, respectively. In addition, we observed the high-frequency responses of the JVFT to the input AC current of the sine wave or the square pulse wave. A clear oscillation of the output voltage could be observed with a 1 MHz sine wave and 250 kHz square pulse wave. We also discussed the feasibility of higher frequency operation by using it as an input interface for a single flux quantum (SFQ) logic circuit.
Vector S-parameter measurements of the superconducting vortex flow transistor (VFT) are presented. The measurements were obtained for frequencies up to 100 MHz on VFTs that had a calculated transmit-time cutoff frequency of 5 GHz. An equivalent circuit model that includes calculations of the VFT transresistance, input inductance, and feedthrough capacitance is derived from these measurements. The measurements are limited to an upper frequency of 100 MHz due to crosstalk in the low-impedance system.>
We have measured vortex motion in a long one-dimensional array of small underdamped niobium tunnel junctions which are coupled in parallel by superconducting wires. In the current-voltage characteristic, a resonant step occurs similar to the Eck peak in long continuous junctions. Due to the discrete nature of our samples, the voltage of this resonant step follows a sinusoidal dependence on the magnetic field rather than the linear dependence found in long continuous junctions. With a control current applied parallel to the array of junctions, the device can be operated as a vortex-flow transistor or as a tunable vortex-flow oscillator. Compared to long continuous junctions, the performance of discrete transistors is better with regard to the threshold current and transresistance, but worse with regard to the output resistance. Discrete oscillators have the advantage over their continuous counterparts in that the output impedance is of the order of 10 Ω. Numerical simulations indicate power levels around 0.5 μW and frequencies above 500 GHz.
Superconducting flux flow transistors (SFFTs) have recently been used in a W-band amplifier operating from 91 to 98 GHz and in an invertor configured as an oscillator operating at 86 GHz. These SFFTs consist of three weakened YBaCuO links in parallel. The links are about 1- mu m wide, 3- mu m long, and 20-nm thick (relative to an electrode thickness of about 200 nm). The links are biased above their local critical field so that vortices flow through the links in accordance with the Lorentz-type force supplied by the bias. The 'gate' is a control line located proximate to the link system and supplies a local magnetic field. Above a critical current, flux flow begins and the device enters the active region characterized by a transresistive response to control current and a finite output resistance. A flux flow invertor circuit can consist of 2 SFFTs: both devices are in parallel with the current bias and the input is a control current to one device.
Research during the initial year of this grant concentrated on fabrication and modelling of long Josephson junction structures. A particular effort was made to understand the basic operating mechanisms of a type of superconducting transistor, the vortex flow transistor, and to optimize its circuit performance. Fabrication techniques were developed using niobium and lead superconductors. These techniques allow rapid production of a variety of device shapes. An optimization of geometric configuration was made to produce the most desirable device characteristics. Amplification was observed at low frequencies and initial coupling circuit designs were made to enable high frequency measurement. Development of potentially more versatile fabrication techniques using niobium and niobium nitride was also begun, as was a simulation study aimed primarily at understanding spatially nonuniform long junction structures.