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IEEE Transactions on Electron Devices

Flux flow amplifiers and logic operating at millimeter wave frequencies

J. Martens, T. E. Zipperian, VINCENT M. HIETALA, David S. Ginley, Chris P. Tigges, Julia M. Phillips, Michael P. Siegal

Published Jan 1, 1992• 0 citations
Publisher

Abstract

Superconducting flux flow transistors (SFFTs) have recently been used in a W-band amplifier operating from 91 to 98 GHz and in an invertor configured as an oscillator operating at 86 GHz. These SFFTs consist of three weakened YBaCuO links in parallel. The links are about 1- mu m wide, 3- mu m long, and 20-nm thick (relative to an electrode thickness of about 200 nm). The links are biased above their local critical field so that vortices flow through the links in accordance with the Lorentz-type force supplied by the bias. The 'gate' is a control line located proximate to the link system and supplies a local magnetic field. Above a critical current, flux flow begins and the device enters the active region characterized by a transresistive response to control current and a finite output resistance. A flux flow invertor circuit can consist of 2 SFFTs: both devices are in parallel with the current bias and the input is a control current to one device.

DOI
10.1109/16.163540

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Superconducting flux flow transistors (SFFTs) have recently been used in a W-band amplifier operating from 91 to 98 GHz and in an invertor configured as an oscillator operating at 86 GHz. These SFFTs consist of three weakened YBaCuO links in parallel. The links are about 1- mu m wide, 3- mu m long, and 20-nm thick (relative to an electrode thickness of about 200 nm). The links are biased above their local critical field so that vortices flow through the links in accordance with the Lorentz-type force supplied by the bias. The 'gate' is a control line located proximate to the link system and supplies a local magnetic field. Above a critical current, flux flow begins and the device enters the active region characterized by a transresistive response to control current and a finite output resistance. A flux flow invertor circuit can consist of 2 SFFTs: both devices are in parallel with the current bias and the input is a control current to one device.
The dynamics of fluxons in the vortex flow transistor (VFT) has been much studied. The fluxon transit time determines the fundamental speed limit of operation. Since fluxons can travel at the velocity of electromagnetic waves in the junction, the VFT has the potential for operating in high frequency systems ( ≈ 100 GHz). However, owing to the low input and output impedance of the VFT, use of the device in a conventional circuit would be quite limited. A distributed amplifier configuration consisting of many VFTs has been proposed to remedy the problems of low impedance levels. However, the realization of such an amplifier circuit at microwave or millimetre wave frequencies depends on obtaining a circuit model. In this paper, microwave superconducting VFT distributed amplifiers using the balanced control technique is reviewed. This kind of amplifier has the advantage that the capacitive feedthrough effect is decreased to a negligible extent. This is the major limiting factor for high frequency applications. The self-field effect which makes the current step inclined is reduced by injecting bias current only around the region of one end of the junction thus obtaining steeper I- V characteristics. With the asymmetric geometry, the slope of the current step is about one hundred times steeper than those obtained with the conventional overlap geometry. Owing to the diamagnetic behaviour of the Josephson junction, a little of the magnetic field induced by the current in the control line is allowed to penetrate the junction. Thus, the transresistance rm of a VFT is very small. Some methods for maximizing rm and minimizing the output impedance r0 also appear in this review. The feasibility of fabricating VFT distributed amplifiers using low-Tc superconducting material has been demonstrated. The power gain of the amplifier can be as high as 15 dB with a flat frequency response.
Microwave two-port S-parameter measurements and modeling were performed on superconducting flux flow transistors. These transistors, based on the magnetic control of flux flow in an array of high-temperature superconducting weak links, can exhibit significant available power gain at microwave frequencies (over 20 dB at 7-10 GHz in some devices). The input impedance is largely inductive, while the output impedance is resistive and inductive. These devices are potentially useful in numerous applications, including matched amplifiers.>
Microwave two-port S-parameter measurements and modeling of superconducting flux flow transistors are presented. The transistors, based on the magnetic control of flux flow in any array of high temperature superconducting weak links, exhibit significant available power gain at microwave frequencies (over 20 dB at 7-10 GHz in some devices). The input impedance is largely inductive while the output impedance is both resistive and inductive. It is shown that the characteristics of these devices are useful in numerous applications including matched amplifiers, phase shifters and active impedance convertors.>
A niobium-based superconducting amplifier consisting of a series array of 60 vortex flow transistors (VFT) was fabricated and tested. Each VFT consisted of a long Josephson junction biased in the flux flow state, magnetically coupled to a current based on a distributed amplifier configuration. The transresistance of the amplifier in a 50- Omega environment for frequencies up to 1 MHz was measured. The transresistance of the array was less than the expected value calculated from measurements obtained on a single VFT. The difference was probably due to nonuniformities in the fabrication process, which caused some of the junctions not to be biased in the flux flow state or receive the same amount of magnetic field from the control line. However, measurements of the array showed that a large number of VFTs could be connected in series and simultaneously be biased into the flux flow state.>
A theoretical study is made of a travelling-wave-type oscillator, which utilizes a flux flow in a long Josephson junction for use as a local oscillator in the integrated superconducting receiver system. An internal electromagnetic field of the oscillator junction in the flux-flow state is investigated both numerically and analytically. It is shown that the voltage amplitude of the internal oscillation increases gradually in the direction of the flux flow and reaches a maximum value at the junction end. An equivalent circuit of the oscillator is also obtained, which gives dependences of the emitted radiation on frequency, magnetic field, and load. It is shown that the output power attains the value of the order of 10−6 W in the frequency range between 100 and 500 GHz, and that the output power and the radiation frequency can be controlled by both the bias voltage and the applied magnetic field. These theoretical results explain quantitatively the experimental ones with a Pb-alloy long junction of length 24 λJ.