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Applied Physics Letters

The subgap current in Nb∕AlOx∕Nb tunnel junctions

F. P. Milliken, R. H. Koch, John R. Kirtley, John Rozen

Published Dec 9, 2004• 8 citations
Publisher

Abstract

We have measured the subgap current at 0.8 K in several hysteretic 1.5×1.6 and 2.6×2.6μm2 Nb∕AlOx∕Nb tunnel junctions. In zero magnetic field, the critical current Ic∼8μA and the subgap resistance R∼0.3MΩ. When we apply a magnetic field, Ic can be as low as 1 nA, and R is larger than 1 GΩ. This means that in a superconducting qubit made using Nb tunnel junctions, the decoherence rate from the quasiparticle conductance may be as low as 1∕(100μs).

DOI
10.1063/1.1836016

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We have measured the subgap current at 0.8 K in several hysteretic 1.5×1.6 and 2.6×2.6μm2 Nb∕AlOx∕Nb tunnel junctions. In zero magnetic field, the critical current Ic∼8μA and the subgap resistance R∼0.3MΩ. When we apply a magnetic field, Ic can be as low as 1 nA, and R is larger than 1 GΩ. This means that in a superconducting qubit made using Nb tunnel junctions, the decoherence rate from the quasiparticle conductance may be as low as 1∕(100μs).
We have studied the current-voltage characteristics of small area tunnel junctions at temperatures below 1 K. The junctions were made in an edge geometry with a Nb base electrode and had areas less than .05 μm2and critical currents in the nA range. Although the measured I-V characteristics resemble those of ordinary hysteretic junctions, the supposed zero-voltage portion of the curve proved to have a finite slope and to deviate from zero voltage. For these junctions it is apparently possible for occasional 2π phase slips to occur without switching to the usual voltage state. This behavior can be explained either by macroscopic quantum tunneling or by a model in which the effective shunt conductance of the junction is frequency dependent.
Measurements of temperature dependence of the return current in high quality Nb/AlOx/Nb Josephson junctions are presented. From the experimental data, we obtain the effective resistance, i.e., the effective dissipation, for the retrapping process, according to the generalized resistively shunted junction model proposed by Chen, Fisher, and Leggett. We present a careful analysis, based on a comparison between the measured temperature dependencies of both the return and the quasiparticle tunneling current. We find that the junction subgap conductance, which includes the quasiparticle and the quasiparticle-pair interference terms, is responsible for the return process. The measurements have been performed on various samples, in a wide range of critical current densities from 50 to 2250 A/cm2, covering different damping regimes and spanning over the high and low temperature limits. Junctions with low critical current density show ideal dissipation which makes the return current scale with temperature according to the BCS exponential behavior without flattening out effects. This result may be relevant for the possible use of Nb/AlOx/Nb junctions in macroscopic quantum coherence experiments, which strongly require a very low dissipation.
Superconducting tunnel junctions (STJs) have been successfully used as single-photon detectors but require the use of a magnetic field to operate. A recent paper has proposed the idea to use a circuit of three junctions in place of a single junction in order to achieve the necessary biasing without applying a magnetic field. The nonlinear interaction between the different junctions in the circuit causes the existence of a stable subgap state for one of the junctions, which acts as the detector junction. In this paper, we present the first measurements demonstrating the existence of such a biasing state feasible for STJ detectors. Single junction measurements with an applied magnetic field help determine the functional form of the subgap current versus voltage; then the operating point of a three-junction circuit is measured and fit to theory. The excellent match between theory and experiment demonstrates the existence of the subgap biasing state. The outlook for possible use in detector applications is discussed.
All-aluminum Josephson junctions with high-transparency barriers were fabricated using the shadow-evaporation technique and measured at low temperatures, T≈25mK. Due to the high junction transparency, the IV characteristics showed only small hysteresis with a retrapping-to-switching current ratio of up to 80%. The observed critical currents were as large as 80%-100% of the Ambegaokar-Baratoff values. High barrier quality was confirmed by the low subgap leakage currents in the quasiparticle branches, which makes the low hysteretic Al junctions promising for application in integrated rapid single-flux quantum - qubit circuitry.
Low βc tunnel junctions have current-voltage characteristics which deviate from the intrinsic quasiparticle characteristic because of the ac Josephson effect. This effect has previously been analyzed for the special case of a pointlike junction in zero applied field. We demonstrate that deviations still occur when the critical current is suppressed by an applied field to a small fraction of its zero field value. The effects are significant for junctions whose length l is comparable to the Josephson penetration length λJ. These are often the junctions of practical interest. We present a simple model to explain the physical origin of these deviations, and also present detailed computer simulations using up to nine segments to model the distributed junction. For l = λJ, and an applied magnetic field which corresponds to the first minimum of the junction threshold characteristic, we find time-averaged voltages which deviate from the quasiparticle characteristic by up to 5%. Their magnitude is proportional to (l/λJ)2 and inversely proportional to the square of the applied field. This dependence can be used experimentally to confirm the observation of the effect.