Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Log inSign up
Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Blog
Job Board
Q3AS

© 2026 Aqora Quantum S.A.S.

TermsPrivacyLegal Notice

Physica E Low-dimensional Systems and Nanostructures

Electronic state and g-factor of Er3+ ion doped in InP

Masafumi Oohigashi, Kazuko Motizuki

Published May 1, 2001• 2 citations
Publisher
DOI
10.1016/s1386-9477(01)00126-6

Related papers

Coherent control of orbital angular momentum transfer by Er3+ion concentration in an Er3+-doped YAG crystal

Tong Zhang, KaiKai Zhang, Xu Deng +2 more

•Jan 1, 2025•0 citations

Intracenter transitions in triply ionized erbium ions diffused into III-V compound semiconductors

Xinwei Zhao, Kazuhiko Hirakawa, Toshiaki Ikoma

The rare-earth element, erbium (Er), was successfully diffused into GaAs and InP for the first time. Two intense and three weak sharp photoluminescence (PL) lines related with Er were observed at a wavelength of ∼1.55 μm both in GaAs and InP. It was found, for the first time, that the emission energy and the linewidth of the two intense Er-related PL lines do not depend on temperatures up to 220 K. This clearly indicates that these sharp emission lines are due to 4f-intracenter transitions in triply ionized erbium (Er3+) ions, and that the 4f orbitals are well shielded from a crystal field by the outer closed orbitals. Furthermore, it was found that the intensity ratio of the five emission lines from Er3+ is independent of the excitation power density. The results reveal that the Er3+ ion substitutes a cation site both in GaAs and InP, and that the five PL lines correspond to the transitions from the first excited state to the five crystal-field-split ground states of Er3+ ion with a tetrahedral (Td) symmetry.

Applied Physics Letters•Feb 20, 1989•27 citations

An Infrared Electronic Transition in the Er 3+ Ion

G. S. Krinchik, Mikhail V. Chetkin

OptSp•Aug 1, 1961•1 citation

Reverse saturable absorption in Er+3 doped systems

C. M. Nascimento, Maria José Valenzuela Bell

Journal of Non-Crystalline Solids•Nov 1, 2004•5 citations

Optical amplification in Er3+-doped transparent Ba2NaNb5O15 single crystal at 850 nm

Patricia Haro‐González, Inocencio Rafael Martin, F.J. Lahoz +3 more

Positive optical gain around 5 cm−1 (∼21 dB/cm) has been observed in Er3+-doped Ba2NaNb5O15 single crystal using a pump and probe experimental setup. High power laser pulses at 532 nm have been used as the pump source in order to strongly populate the S43/2(H211/2) levels of the Er3+ ions due to ground state absorption. Low signal beam cw laser radiation at 850 nm has been used as the probe beam to stimulate the emission associated with the S43/2(H211/2)→I413/2 electronic transition of the Er3+ ions. The process has been modelized as a four level system, and its population has been analyzed and simulated in order to study the gain dynamics. Optical amplification of the probe signal has been observed during the first 60 μs, which represents a good agreement between the measured lifetime of the S43/2(H211/2) levels and the reported simulation.

Journal of Applied Physics•Dec 1, 2009•8 citations

Excited-State Absorption of Er/sup 3+/-Doped LiNbO/sub 3/

R. Burlot-Loison, J.L. Doualan, P. Le Boulanger +1 more

Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC)•Aug 25, 2005•5 citations
The rare-earth element, erbium (Er), was successfully diffused into GaAs and InP for the first time. Two intense and three weak sharp photoluminescence (PL) lines related with Er were observed at a wavelength of ∼1.55 μm both in GaAs and InP. It was found, for the first time, that the emission energy and the linewidth of the two intense Er-related PL lines do not depend on temperatures up to 220 K. This clearly indicates that these sharp emission lines are due to 4f-intracenter transitions in triply ionized erbium (Er3+) ions, and that the 4f orbitals are well shielded from a crystal field by the outer closed orbitals. Furthermore, it was found that the intensity ratio of the five emission lines from Er3+ is independent of the excitation power density. The results reveal that the Er3+ ion substitutes a cation site both in GaAs and InP, and that the five PL lines correspond to the transitions from the first excited state to the five crystal-field-split ground states of Er3+ ion with a tetrahedral (Td) symmetry.
Positive optical gain around 5 cm−1 (∼21 dB/cm) has been observed in Er3+-doped Ba2NaNb5O15 single crystal using a pump and probe experimental setup. High power laser pulses at 532 nm have been used as the pump source in order to strongly populate the S43/2(H211/2) levels of the Er3+ ions due to ground state absorption. Low signal beam cw laser radiation at 850 nm has been used as the probe beam to stimulate the emission associated with the S43/2(H211/2)→I413/2 electronic transition of the Er3+ ions. The process has been modelized as a four level system, and its population has been analyzed and simulated in order to study the gain dynamics. Optical amplification of the probe signal has been observed during the first 60 μs, which represents a good agreement between the measured lifetime of the S43/2(H211/2) levels and the reported simulation.