Two-color optical spectroscopy is used to directly manipulate shallow levels available in Si:Er samples of different parameters. It is observed that the excitation energy provided by a laser operating in the visible can be temporarily stored by trapping photogenerated carriers at shallow centers available in the material. Subsequently, this energy can be transferred to the $4f$ -electron core of the ${\mathrm{Er}}^{3+}$ ion in a trap ionization process induced by a mid-infrared pulse from a free-electron laser. In that way, Er-related luminescence at $1.5 \ensuremath{\mu}\mathrm{m}$ can be generated by an infrared pulse applied within several milliseconds after the band-to-band excitation pulse. By scanning the wavelength of the free-electron laser, ionization spectra of the shallow centers participating in the energy transfer are obtained, allowing for their identification. On that basis, the involvement of thermal donors is suggested. The results demonstrate that excitation of Er ions in Si is a multichannel energy transfer process where shallow centers play an important role.Two-color optical spectroscopy is used to directly manipulate shallow levels available in Si:Er samples of different parameters. It is observed that the excitation energy provided by a laser operating in the visible can be temporarily stored by trapping photogenerated carriers at shallow centers available in the material. Subsequently, this energy can be transferred to the $4f$-electron core of the ${\mathrm{Er}}^{3+}$ ion in a trap ionization process induced by a mid-infrared pulse from a free-electron laser. In that way, Er-related luminescence at $1.5 \ensuremath{\mu}\mathrm{m}$ can be generated by an infrared pulse applied within several milliseconds after the band-to-band excitation pulse. By scanning the wavelength of the free-electron laser, ionization spectra of the shallow centers participating in the energy transfer are obtained, allowing for their identification. On that basis, the involvement of thermal donors is suggested. The results demonstrate that excitation of Er ions in Si is a multichannel energy transfer process where shallow centers play an important role.

Physical review. B, Condensed matterFeb 15, 200040 citations

Absorption spectra of bulk aluminum nitride crystals doped with Er3+ ions

Yu. V. Zhilyaev, Viktor V. Zelenin, E. N. Mokhov +3 more

This Letter presents results of analysis of the absorption spectra of AlN:Er 3+ bulk crystals. In the spectral of 370–700 nm, absorption lines responsible for intraconfiguration electron transition from the ground state 4 I 15/2 to the excited states of Er 3+ ions are found. Transitions to the levels of the 4 F 9/2 , 2 H 11/2 , and 4 G 11/2 states at 2 K are studied in detail. The number of observed lines for these transitions fully agrees with that theoretically possible for f – f electron transitions in Er 3+ ions found in a noncubic crystal field. The small width of the observed lines and their number indicate that erbium ions displace mostly one regular crystal position. Most probably, Er 3+ occupies the position of Al. Energy positions of excited states for the considered transitions are determined.This Letter presents results of analysis of the absorption spectra of AlN:Er 3+ bulk crystals. In the spectral of 370–700 nm, absorption lines responsible for intraconfiguration electron transition from the ground state 4 I 15/2 to the excited states of Er 3+ ions are found. Transitions to the levels of the 4 F 9/2 , 2 H 11/2 , and 4 G 11/2 states at 2 K are studied in detail. The number of observed lines for these transitions fully agrees with that theoretically possible for f – f electron transitions in Er 3+ ions found in a noncubic crystal field. The small width of the observed lines and their number indicate that erbium ions displace mostly one regular crystal position. Most probably, Er 3+ occupies the position of Al. Energy positions of excited states for the considered transitions are determined.

Technical Physics LettersFeb 1, 20161 citation

ELECTRONIC EXCITATIONS OF RARE-EARTH IONS

B. P. Kirsanov, E. I. Datskevich

Jan 1, 19960 citations

4f

-electron core of the

{\mathrm{Er}}^{3+}

ion in a trap ionization process induced by a mid-infrared pulse from a free-electron laser. In that way, Er-related luminescence at $1.5 \ensuremath{\mu}\mathrm{m}$ can be generated by an infrared pulse applied within several milliseconds after the band-to-band excitation pulse. By scanning the wavelength of the free-electron laser, ionization spectra of the shallow centers participating in the energy transfer are obtained, allowing for their identification. On that basis, the involvement of thermal donors is suggested. The results demonstrate that excitation of Er ions in Si is a multichannel energy transfer process where shallow centers play an important role.