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Japanese Journal of Applied Physics

A Method of Discarding After-Pulses in Single-Photon Detection for Quantum Key Distribution

Akio Yoshizawa, R. Kaji, Hidemi Tsuchida

Published Oct 15, 2002• 12 citations
Publisher

Abstract

We evaluate the after-pulse probability of a gated-mode single-photon detector operating at 1550 nm. The experimental results are applied to the simulation of quantum key distribution to estimate the obtainable key rate, which decreases at higher gate frequencies because of a large number of after-pulse-related errors. In this paper, we present a postselection method of discarding after-pulses to improve the key rate.

DOI
10.1143/jjap.41.6016

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Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE•Nov 19, 2012•14 citations
We evaluate the after-pulse probability of a gated-mode single-photon detector operating at 1550 nm. The experimental results are applied to the simulation of quantum key distribution to estimate the obtainable key rate, which decreases at higher gate frequencies because of a large number of after-pulse-related errors. In this paper, we present a postselection method of discarding after-pulses to improve the key rate.
High-speed single-photon detectors are crucial for efficiently performing quantum key distribution. We demonstrate fiber-optic quantum key distribution at 1550 nm using single-photon detectors operating at 10 MHz. Discharge pulse counting is adopted for single-photon detection in order to suppress after-pulse generation. Furthermore, by setting a dead time in single-photon detection, we discard after-pulses to reduce the number of bit errors in the quantum key distribution. Using discharge pulse counting and after-pulse discarding in the quantum key distribution, we can achieve a key rate of 45 kHz with a bit-error rate of 2%. The fiber length is 10.5 km.
In our recent experiment, we have designed a novel single-photon detecting module for quantum key distribution using an InGaAs/InP avalanche photodiode with gate-mode quenched photo-detection. At a repetition rate of 100 kHz and the working temperature of -60°C, we obtained the detection efficiency η higher than 10% and 20% at the dark probability Pd about 1.3×10-5 and 1.6×10-5 per nanosecond, respectively. Also at 100 kHz, we got the best ratio of Pd/η as 1.7×10-3 per pulse (20 ns). And at a lower repetition such as 10 kHz, we obtained Pd/η as 8.9×10-4 per pulse.
Abstract In order to clarify how the generation of afterpulses in single‐photon detectors based on InGaAs avalanche photodiodes affects quantum key distribution based on the BB84 protocol, we have evaluated the dependence of the final keyrate on the detector clock frequency synchronized between the sender and the receiver, the mean photon number of the incident light pulse from the sender, and the propagation distance between the sender and the receiver. In calculating the quantum bit error rate (QBER), we used measured values for the dark‐count probability and the afterpulse probability. In calculating the keyrate per pulse, we used the conditions described by Lütkenhaus for unconditionally secure quantum key distribution. The results of our analysis reveal that the maximum value of the keyrate when considering the effect of the afterpulses was decreased by about a factor of 1/2 from its value when neglecting the effect of afterpulses. It is also found that there exist optimal operating conditions (mean photon number and clock frequency) for maximizing the keyrate, and that in order to determine these conditions it is essential to take into account the effect of afterpulses. © 2004 Wiley Periodicals, Inc. Electron Comm Jpn Pt 2, 87(9): 38–45, 2004; Published online in Wiley InterScience ( www.interscience.wiley.com ). DOI 10.1002/ecjb.20059
According to the requirements and the characteristics of the InGaAsP/InP avalanche photodiode for single photon detection at infrared wavelengths,the relation between the various gate-mode parameters had been analyzed by the mathematics model and simulation,which provided a reference for the selection of the gate-mode parameters.The result proved that the choice of the bias voltage,the width and the period of the gated pulse was very important to improve the performance of the detector.Based on the simulation,a relatively complete single-photon detector circuit was presented,which can produce the TTL signal for each detected photon.
The implementation and commercialization of quantum cryptography technologies have to face some challenges related to the development of single-photon detectors operating at 1550 nm. The main requirements are: i) high detection efficiency; ii) low noise; iii) high count rate; iv) low timing jitter. Different technologies are currently available for single-photon detection at 1550 nm, but semiconductor devices (like Single-Photon Avalanche Diode, SPAD) offer a photon detection efficiency that is inherently higher than any photocathode employed in vacuum tube detectors. Additionally InGaAs/InP SPADs can detect single photons at 1550 nm with low noise when moderately cooled by means of thermo-electric coolers. Consequently, InGaAs/InP SPAD can be the enabling technology of practical quantum key distribution (QKD) systems, provided that the maximum count rate is increased above 1 Mcps. The main limit is the afterpulsing effect that usually sets too long (< 10 μs) a hold-off time after each avalanche ignition. We present the developments achieved in InGaAs/InP SPAD device design, fabrication technology and front-end electronics, aimed at decreasing the afterpulsing effect, while not impairing photon detection efficiency and timing jitter. The new InGaAs/InP SPADs provide count rates higher than 1 Mcps and temporal response with 60 ps Full-Width at Half Maximum and very short (30 ps time constant) tail. The front-end electronics includes a wide-band pulse generator able to gate the SPAD up to 133 MHz repetition rate. Eventually, a fast avalanche-quenching scheme minimizes quenching time to less than 1 ns, thus effectively reducing afterpulsing by decreasing the total charge flowing through the junction.