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Materials science forum

Optical Properties of Dielectric Microcavities Implanted with Rare Earth Atoms

Hervé Rigneault, B. Jacquier, P. Moretti, A.-M. Jurdyc, Ali Belarouci, A. Auffret, S. Robert

Published Jan 1, 1997• 8 citations
Publisher
DOI
10.4028/www.scientific.net/msf.239-241.717

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We investigate theoretically and experimentally the optical properties of planar Ta2O5/SiO2 multilayer structures implanted with rare earth ions such as erbium and praseodymium. We demonstrate that the spontaneous emission can be strongly enhanced in a direction normal to the layers if the luminescent ions are located in the spacer of a resonant Fabry-Perot type microcavity. Nevertheless, we show that a large amount of light is emitted into the guided modes of the planar stack reducing the optical confinement which is likely to be reached within this type of dielectric microcavities.
Spontaneous emission control for luminescent species located inside multilayer dielectric thin films is investigated theoretically in the framework of classical and quantum electrodynamics. Theory is compared to experimental results concerning rare earth ions implanted inside Ta2O5/SiO2 microcavities. We show that although the planar cavities can control the radiation pattern of sources, these structures are unable to affect significantly the atomic lifetime. The first attempts to etch 3D microcavities are presented.
Rare-earth ions in bulk crystals are excellent solid-state quantum systems in quantum information science owing to their exceptional optical and spin coherence properties. However, the weak fluorescence of single rare-earth ions presents a significant challenge for scalability, necessitating the integration into microcavities. Thin films serve as a promising material platform for the integration, yet fabrication without compromising the properties of the materials and rare-earth ions remains challenging. In this work, we fabricate micrometer-thin yttrium aluminum garnet (YAG) films from bulk crystals using ion implantation techniques. The resulting films preserve the single-crystalline structure of the original bulk crystal. Notably, the embedded rare-earth ions are photostable and exhibit bulk-like spin coherence properties. Our results demonstrate the compatibility of bulk-like spin properties with the thin-film fabrication technique, facilitating the efficient integration of rare-earth ions into on-chip photonic devices and advancing the applications of rare-earth ions in quantum technologies.