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Journal of Applied Physics

A study of nonlinear reflection and optical switching in indium antimonide

Shiyong Feng, EUGENE A. IRENE

Published Mar 1, 1992• 0 citations
Publisher

Abstract

Bistability in the reflected light from an InSb surface has been observed without the use of a resonance cavity, and is explained by an increasing absorption positive feedback mechanism. Relying on this mechanism, a novel InSb optical switch is demonstrated that uses only the surface reflection and operates at room temperature using a pulsed CO2 laser as the pump beam. The polarity of the switched-out signal, the probe beam, was found to depend on the wavelength of the probe beam in the visible and near-infrared range. This novel spectral dependence was used to demonstrate several optical logic elements.

DOI
10.1063/1.351134

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Bistability in the reflected light from an InSb surface has been observed without the use of a resonance cavity, and is explained by an increasing absorption positive feedback mechanism. Relying on this mechanism, a novel InSb optical switch is demonstrated that uses only the surface reflection and operates at room temperature using a pulsed CO2 laser as the pump beam. The polarity of the switched-out signal, the probe beam, was found to depend on the wavelength of the probe beam in the visible and near-infrared range. This novel spectral dependence was used to demonstrate several optical logic elements.
We report the realisation of optically bistable switching and memory elements, and the transphasor Can all-optical transistor) in simple one element nonlinear Fabry-Perot interferometers made from the semiconductor InSb. These devices, which operate at 5 K and 77 K with mW powers from a cw CO laser between 5 and 6 μm rely on a strongly intensity-dependent refractive index discovered near the bandgap region of InSb and explained by bandgap resonant saturation. Switching speeds are shown to be < 500 ns in these first devices and operation to much shorter timescales is predicted. Operation at room temperature and in other semiconductors at other wavelengths remains a possibility and such devices offer considerable potential for all-optical switching in integrated optics and laser pulse control.
We report the observation of optical bistability in an InSb resonator at room temperature. This effect and fringe shifts were caused by nonlinear refraction induced by two-photon absorption of radiation from a single longitudinal mode injection-locked pulsed CO2 laser operating at 9.6–10.6 μm. Intensities as low as 100 kW/cm2 were found to be sufficient to tune the 250-μm-thick cavity through a fringe maximum. From our results we deduce a value of χ(3) of the order of 10−4 esu over the range of intensities investigated.
We report the first observation of quasi-steady-state optical bistability in an InSb etalon at room temperature as a result of the generation of free carriers through two photon absorption of 10 μm radiation. Nonlinear tuning of the etalon through two free spectral ranges has been achieved, with bistability observed around the two cavity resonances. Switching from a low to high transmission state has been achieved in times less than 10 ns while switching in the opposite direction occurs within 50-100 ns. The experimental results have been successfully fitted to a numerical model of the device.
We report the observation of optical bistability in an InSb resonator at room temperature.This effect and fringe shifts were caused by nonlinear refraction induced by two-photon absorption of radiation from a single longitudinal mode injection-locked pulsed CO 2 laser operating at 9.6-10.6flm.Intensities as low as 100 kW /cm 2 were found to be sufficient to tune the 250-flm-thick cavity through a fringe maximum.From our results we deduce a value of X (3) of the order of 10-4 esu over the range of intensities investigated.
Abstract InSb etalons operated at 77 K and illuminated by CO lasers (5.5 pm) exhibit continuous wave (c.w.) optical bistability. A wide range of experiments have been performed to further the basic characterization of these devices and to demonstrate their various potential applications. The latter include signal amplification, modulation and, with external switching, the construction of logic gates. Two devices on a single etalon have now been coupled to form a simple all-optical circuit. New results have also been obtained with InSb at room temperature with pulsed CO2 lasers (10.6 pm).