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Journal of the Optical Society of America B

Praseodymium-doped planar multidielectric microcavities: induced lifetime changes over the emission spectrum

Ali Belarouci, B. Jacquier, P. Moretti, S. Robert, Hervé Rigneault

Published Jun 1, 2001• 6 citations
Publisher

Abstract

We study lifetime modifications induced by luminescent microcavities in the case of praseodymium-doped planar Ta2O5–SiO2 multidielectric structures. From the experimental point of view we measure different decay times of the 1D2 excited level for different wavelengths in the inhomogeneous praseodymium emission spectrum. Decay times depend on the spectral detuning between considered ions and the cavity, and we observe significant changes around the resonance wavelength of the microcavity. The decay times are explained with an electromagnetic modal analysis of spontaneous emission developed in the case of less-loss microcavities.

DOI
10.1364/josab.18.000832

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We study lifetime modifications induced by luminescent microcavities in the case of praseodymium-doped planar Ta2O5–SiO2 multidielectric structures. From the experimental point of view we measure different decay times of the 1D2 excited level for different wavelengths in the inhomogeneous praseodymium emission spectrum. Decay times depend on the spectral detuning between considered ions and the cavity, and we observe significant changes around the resonance wavelength of the microcavity. The decay times are explained with an electromagnetic modal analysis of spontaneous emission developed in the case of less-loss microcavities.
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Spontaneous emission control for luminescent species located inside multilayer dielectric thin films is investigated theoretically in the framework of classical and quantum electrodynamics. Theory is compared to experimental results concerning rare earth ions implanted inside Ta2O5/SiO2 microcavities. We show that although the planar cavities can control the radiation pattern of sources, these structures are unable to affect significantly the atomic lifetime. The first attempts to etch 3D microcavities are presented.
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Since the advent of vertical cavity surface-emitting lasers, a renewed interest has also emerged for the spontaneous emission from Fabry-Pérot microcavities. Changes in spontaneous emission characteristics in a 1D microcavity were predicted long ago,1 but have been demonstrated only recently in the optical domain for solid-state, e.g. semiconductor, structures where changes in spectral purity, lifetime, and emission intensity were observed.2 However, the interpretation of these effects is somewhat obscure, because these structures are highly absorbing and often involve band-to-band, rather than atomic, transitions. In the present study, we use optically transparent Si/SiO2 cavities, consisting of two coplanar Si/SiO2 distributed Bragg reflectors (DBR) around a (λ/2) SiO2 active region, which was doped with ~0.2 at.% Er3+ ions through MeV ion implantation. The Er3+ ions in SiO2 exhibit a sharp, atomic-like, intra-4f transition around λem=1.54 μm, which is effectively shielded by the outerlying filled 5s2 and 5p6 shells. Recently, we reported on the considerable enhancement of the spontaneous emission intensity out of such an Er-doped microcavity.3 In this paper, we present a more detailed study of the modified spontaneous emission, including fluorescence decay measurements to study the effect of the cavity on the spontaneous emission rate.
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