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Physica Scripta

Nonlinear ligth propagation in GaAs-GaAlAs MQW's

K. Henneberger, Günter Manzke

Published Oct 1, 1988• 2 citations
Publisher

Abstract

The propagation of a laser pulse through a GaAs-GaAlAs MQW is investigated in the frame of classical optics. Optical spectra are calculated in the vicinity of the 1 s -exciton resonance of GaAs taking into account interference effects and nonlinear absorption caused by many-exciton effects at high excitation. The density of excited e-h pairs and intensities of transmitted and reflected beam are determined in dependence on the intensity of stationary incident laser beam by simultaneous solution of the problem of exciton diffusion and propagation of the electromagnetic wave. The observed strong nonlinearities refer to an optical bistable behaviour.

DOI
10.1088/0031-8949/38/4/019

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The propagation of a laser pulse through a GaAs-GaAlAs MQW is investigated in the frame of classical optics. Optical spectra are calculated in the vicinity of the 1 s -exciton resonance of GaAs taking into account interference effects and nonlinear absorption caused by many-exciton effects at high excitation. The density of excited e-h pairs and intensities of transmitted and reflected beam are determined in dependence on the intensity of stationary incident laser beam by simultaneous solution of the problem of exciton diffusion and propagation of the electromagnetic wave. The observed strong nonlinearities refer to an optical bistable behaviour.
Abstract A theoretical approach is presented for the description of nonlinear optical properties of GaAs‐GaAlAs MQWS connected with the blue‐shift of the 1s‐exciton resonance at high excitation. An experimental situation is considered where the MQWS is resonantly excited by a pump pulse of narrow spectral width creating a high density of excitons, and where the optical spectra are recorded by an ultrafast broad‐band probe pulse at different time delays. The densities of excitons in the single GaAs wells are determined by the simultaneous solution of the exciton diffusion and the optical problem of wave propagation. With increasing pump intensity jumps of the exciton densities in certain layers appear when the maximum of absorption crosses the pump frequency due to the blue‐shift of the resonance. The mechanism of the corresponding bistabilities in the reflection and transmission spectra is similar to that observed in connection with the quantum‐confined Stark effect.
Abstract The dynamics of optical nonlinearities connected with the blue‐shift of the exciton line in resonantly excited GaAs–GaAlAs MQWS's is investigated theoretically simulating a two‐beam experiment. Jumps in the optical spectra of a weak test pulse (optical switching), which follows the intense pump pulse at different time delays, are observed, basing on a strong increase of the absorption. A similar mechanism of the bistability is observed in connection with the electro‐absorptive effect.
The optical spectra of laser-excited semiconductors change with varying laser intensity. Close to exciton or biexciton resonances these optical nonlinearities are, e.g., large enough to obtain optical bistability. The cause for these large nonlinearities are many-body effects in the system of the electron-hole pair excitation. The use of nonequilibrium Green’s functions, or if a quasi-equilibrium exists of thermal Green’s functions, makes it possible to take radiative and Coulomb interactions consistently into account.
We analyze laser pulse propagation in a semiconductor with nonlinear absorption depending on free electron concentration and a concentration of ionized donors. Under certain conditions this interaction is accompanied by a resonator-less optical bistability appearance. It is an attractive modern problem because of developing the all-optical methods for data treatment. In contrast to many investigations made early we take into account a longitudinal diffraction of the optical beam. It means that we consider optical beam diffraction along coordinate of its propagation. This results in the presence of the optical radiation reflection from spatio-temporal contrast structure induced by the laser pulse. As a result, we observe a propagation of the fast light corresponding to wave reflected from a semiconductor as well as unmoving part of the pulse placed near the semiconductor face. The reflection of laser pulse from the boundary of high absorption domain is demonstrated. This phenomenon takes place due to presence of high gradient of optical properties of a medium.