Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Log inSign up
Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Blog
Job Board
Q3AS

© 2026 Aqora Quantum S.A.S.

TermsPrivacyLegal Notice

Conference on Lasers and Electro-Optics

Direct measurement of polarization resolved transition dipole moment in InGaAs/GaAs quantum dots

Kevin L. Silverman, Benjamin Sonnenberg-Klein, Richard P. Mirin, Steven T. Cundiff, K. Furbush

Published Jun 25, 2003• 1 citation
Publisher

Abstract

Summary from only given. We measure the dipole moment of InGaAs/GaAs self-assembled quantum dots by investigating the propagation of femtosecond light pulses interacting resonantly with the ground to excited state transition. The measurement involves coupling light into a waveguide containing quantum dots in the core and time resolving the output. The advantages are increased interaction length with the weakly absorbing quantum dots and observation of the decay of light pulses over successive cavity round trips. The large uncertainty in waveguide coupling efficiency that has hindered the determination of the absolute dipole moment in similar experiments' does not affect our results.

DOI
10.1109/cleo.2002.1034411

Related papers

Polarization-dependent Rabi oscillations in single InGaAs quantum dots

Lucien Besombes, Jeremy J. Baumberg, Junichi Motohisa

Measurements of optical Rabi oscillations in the excited states of individual InGaAs are presented. Under pulsed resonant excitation we observe Rabi oscillations with increasing pulse area, which are damped after the first maximum and minimum. We show that the observed damping comes from an additional non-resonant generation of carriers in the quantum dot. The observation of Rabi oscillations provides an efficient way of directly measuring the excitonic transitions' dipole moments. A polarization anisotropy of the dipole moment is resolved in some of the quantum dots.

Semiconductor Science and Technology•Mar 3, 2004•7 citations

Coherent Light-Matter Interaction in InGaAs Quantum Dots: Dephasing Time and Optical Rabi Oscillations

Paola Borri, W. Langbein, Stephan Schneider +4 more

We present measurements of the dephasing time and of optical Rabi oscillations in the excitonic ground-state transition of an InGaAs quantum dot ensemble at low temperature, using an heterodyne pump–probe technique. Dephasing times of several hundred picoseconds are measured, enabling coherent light–matter interaction with picosecond optical pulses. Optical Rabi oscillations which are damped versus pulse area and change period when changing pulse duration are observed. Comparison with calculations indicates that the observed damping is not intrinsic to a single dot. Dephasing processes and the biexciton resonance change the amplitude and the period of the oscillations, respectively, while the damping versus pulse area is due to a distribution of transition dipole moments in the ensemble.

physica status solidi (b)•Oct 1, 2002•6 citations

Dephasing of intersublevel polarizations in InAs/GaAs self-assembled quantum dots

S. Sauvage, P. Boucaud, T. Brunhes +4 more

We have performed time-integrated degenerate four-wave mixing experiments in InAs/GaAs self-assembled quantum dots. The quantum dots are excited in resonance with an intersublevel transition between the valence states of the dots. The dephasing time ${T}_{2}$ is deduced from the time dependence of the photon echo amplitude as a function of the delay between the two incident pulses. At low temperature, a dephasing time ${T}_{2}$ of 15 ps is measured for a resonant excitation at 7.4 \ensuremath{\mu}m wavelength. This dephasing corresponds to an homogeneous broadening of the intersublevel transition of 87 \ensuremath{\mu}eV. The polarization decay time is much longer than the one observed for resonant intersubband excitations in quantum wells. The dephasing time of the intersublevel polarization exhibits only a weak temperature dependence, indicating that the dephasing is not dominated by phonon-assisted scattering mechanisms.

Physical review. B, Condensed matter•Oct 23, 2002•19 citations

Self-induced transparency in InGaAs quantum-dot waveguides

Stephan Schneider, Paola Borri, W. Langbein +6 more

We report the experimental observation and the theoretical modeling of self-induced-transparency signatures such as nonlinear transmission, pulse retardation and reshaping, for subpicosecond pulse propagation in a 2-mm-long InGaAs quantum-dot ridge waveguide in resonance with the excitonic ground-state transition at 10 K. The measurements were obtained by using a cross-correlation frequency-resolved optical gating technique which allows us to retrieve the field amplitude of the propagating pulses.

Applied Physics Letters•Oct 31, 2003•40 citations

Time-resolved four-wave mixing in InAs/InGaAs quantum-dot amplifiers under electrical injection

Paola Borri, W. Langbein, J. M. Hvam +3 more

Time-resolved four-wave mixing in an InAs/InGaAs/GaAs electrically pumped quantum-dot amplifier is measured at room temperature for different applied bias currents going from optical absorption to gain of the device. The four-wave mixing signal from 140 fs pulses shows a transition from a delayed photon-echo response in the absorption regime to a prompt free polarization decay in the gain regime. This corresponds to a pronounced reduction of the dephasing time from 250 fs at zero bias to less than 50 fs at the maximum applied current. The four-wave mixing response at transparency of the device shows a composite structure with both photon echo and free-polarization decay. This is a signature of the digital occupation number in quantum dots, resulting at transparency in a signal from dots occupied with either zero or two excitons corresponding to absorption or gain of the dot ground state.

Applied Physics Letters•Mar 13, 2000•46 citations

Resonantly excited emissions from a GaAs quantum dot and an exciton dipole moment

K. Kuroda, Takashi Kuroda, Kazuaki Sakoda +2 more

We report on observation of spontaneous emissions from a single quantum dot after resonant excitation. To capture weak emissions from a single quantum dot, reflection of an excitation laser was reduced by applying obliquely incident geometry and crossed polarization configuration. In addition, collected emissions were temporally resolved to be separated from residual reflection. These allowed us to realize a simple manipulation and read out of an exciton qubit. We observed an exciton Rabi oscillation in excitation amplitude dependence of the emission intensity. We determined an exciton dipole moment from the Rabi oscillation and from the emission decay time, independently. Comparison between the two values shows reasonable agreement.

Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE•Jan 30, 2008•0 citations
Summary from only given. We measure the dipole moment of InGaAs/GaAs self-assembled quantum dots by investigating the propagation of femtosecond light pulses interacting resonantly with the ground to excited state transition. The measurement involves coupling light into a waveguide containing quantum dots in the core and time resolving the output. The advantages are increased interaction length with the weakly absorbing quantum dots and observation of the decay of light pulses over successive cavity round trips. The large uncertainty in waveguide coupling efficiency that has hindered the determination of the absolute dipole moment in similar experiments' does not affect our results.
Measurements of optical Rabi oscillations in the excited states of individual InGaAs are presented. Under pulsed resonant excitation we observe Rabi oscillations with increasing pulse area, which are damped after the first maximum and minimum. We show that the observed damping comes from an additional non-resonant generation of carriers in the quantum dot. The observation of Rabi oscillations provides an efficient way of directly measuring the excitonic transitions' dipole moments. A polarization anisotropy of the dipole moment is resolved in some of the quantum dots.
We present measurements of the dephasing time and of optical Rabi oscillations in the excitonic ground-state transition of an InGaAs quantum dot ensemble at low temperature, using an heterodyne pump–probe technique. Dephasing times of several hundred picoseconds are measured, enabling coherent light–matter interaction with picosecond optical pulses. Optical Rabi oscillations which are damped versus pulse area and change period when changing pulse duration are observed. Comparison with calculations indicates that the observed damping is not intrinsic to a single dot. Dephasing processes and the biexciton resonance change the amplitude and the period of the oscillations, respectively, while the damping versus pulse area is due to a distribution of transition dipole moments in the ensemble.
We have performed time-integrated degenerate four-wave mixing experiments in InAs/GaAs self-assembled quantum dots. The quantum dots are excited in resonance with an intersublevel transition between the valence states of the dots. The dephasing time T2{T}_{2}T2​ is deduced from the time dependence of the photon echo amplitude as a function of the delay between the two incident pulses. At low temperature, a dephasing time T2{T}_{2}T2​ of 15 ps is measured for a resonant excitation at 7.4 \ensuremath{\mu}m wavelength. This dephasing corresponds to an homogeneous broadening of the intersublevel transition of 87 \ensuremath{\mu}eV. The polarization decay time is much longer than the one observed for resonant intersubband excitations in quantum wells. The dephasing time of the intersublevel polarization exhibits only a weak temperature dependence, indicating that the dephasing is not dominated by phonon-assisted scattering mechanisms.
We report the experimental observation and the theoretical modeling of self-induced-transparency signatures such as nonlinear transmission, pulse retardation and reshaping, for subpicosecond pulse propagation in a 2-mm-long InGaAs quantum-dot ridge waveguide in resonance with the excitonic ground-state transition at 10 K. The measurements were obtained by using a cross-correlation frequency-resolved optical gating technique which allows us to retrieve the field amplitude of the propagating pulses.
Time-resolved four-wave mixing in an InAs/InGaAs/GaAs electrically pumped quantum-dot amplifier is measured at room temperature for different applied bias currents going from optical absorption to gain of the device. The four-wave mixing signal from 140 fs pulses shows a transition from a delayed photon-echo response in the absorption regime to a prompt free polarization decay in the gain regime. This corresponds to a pronounced reduction of the dephasing time from 250 fs at zero bias to less than 50 fs at the maximum applied current. The four-wave mixing response at transparency of the device shows a composite structure with both photon echo and free-polarization decay. This is a signature of the digital occupation number in quantum dots, resulting at transparency in a signal from dots occupied with either zero or two excitons corresponding to absorption or gain of the dot ground state.
We report on observation of spontaneous emissions from a single quantum dot after resonant excitation. To capture weak emissions from a single quantum dot, reflection of an excitation laser was reduced by applying obliquely incident geometry and crossed polarization configuration. In addition, collected emissions were temporally resolved to be separated from residual reflection. These allowed us to realize a simple manipulation and read out of an exciton qubit. We observed an exciton Rabi oscillation in excitation amplitude dependence of the emission intensity. We determined an exciton dipole moment from the Rabi oscillation and from the emission decay time, independently. Comparison between the two values shows reasonable agreement.