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Third-order nonlinear absorption spectra of an impurity in a spherical quantum dot with different confining potential

S. Yılmaz, Mehmet Şahin

Published Dec 10, 2009• 66 citations
Publisher

Abstract

In this study, the linear and third-order nonlinear optical absorption coefficients of intersublevel transitions have been calculated for a spherical CdS/SiO2 quantum dot (QD) with infinite and different finite confining potential by using the density matrix formalism. The electron eigenenergies and the corresponding wavefunctions have been determined by the variational method under the effective mass approximation. We have investigated the effects of the incident optical intensity, QD radius, and confinement potential on the intersublevel optical absorption coefficients. It is found that the size of the dot and depth of the confinement have a great effect on the linear, the nonlinear, and the total absorption coefficients. Also, the total optical absorption saturation intensity is controlled by the strength of the confinement or the incident optical intensity.

DOI
10.1002/pssb.200945491

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Linear and nonlinear optical absorptions in one-dimensional semi-parabolic quantum dot is investigated. The analytical expression of linear and third-order nonlinear optical absorption coefficients are obtained by using compact density-matrix approach and iterative method. Numerical results are presented for an GaAs/AlGaAs quantum dot and the dependence on the quantum confinement of the semi-parabolic quantum dot, the incident optical intensity, and on the relaxation rate are also investigated. The results indicate that the optical absorption coefficients are strongly influenced by the confining frequency, relaxation time, and the incident optical intensity, respectively. However, their influences for the linear optical absorption, third-order nonlinear optical absorption, and the total optical absorption are different. We think our theoretical study may make a great contribution to experimental studies and may open up new opportunities for practical exploitation of the quantum-size effect in optical devices.
Abstract This paper systematically explores the third-order nonlinear optical properties and modulation mechanisms of a spherical quantum dot system confined by a Mie-type potential. We analytically solve the Schrödinger equation with Nikiforov–Uvarov method based on effective mass approximation to obtain the eigenenergies and wave function of the system. Subsequently, key third-order nonlinear optical parameters, including the third-harmonic generation (THG) coefficient, total optical absorption coefficients, and refractive index changes, are derived via the density matrix formalism. The results indicate that the nonlinear optical responses strongly depend on the geometric dimensions and the microscopic confinement parameters. By adjusting these parameters, effective control over the THG coefficient can be achieved. Furthermore, this study reveals the significant modulation effects of environmental factors. The synergistic influence of quantum dot size, confinement potential, and environmental interactions is systematically analyzed, providing a theoretical basis for designing high-performance nonlinear optical devices based on quantum dots.
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Simultaneous effects of an on-center hydrogenic impurity and band edge non-parabolicity on intersubband optical absorption coefficients and refractive index changes of a typical GaAs/Al x Ga 1−x As spherical quantum dot are theoretically investigated, using the Luttinger—Kohn effective mass equation. So, electronic structure and optical properties of the system are studied by means of the matrix diagonalization technique and compact density matrix approach, respectively. Finally, effects of an impurity, band edge non-parabolicity, incident light intensity and the dot size on the linear, the third-order nonlinear and the total optical absorption coefficients and refractive index changes are investigated. Our results indicate that, the magnitudes of these optical quantities increase and their peaks shift to higher energies as the influences of the impurity and the band edge non-parabolicity are considered. Moreover, incident light intensity and the dot size have considerable effects on the optical absorption coefficients and refractive index changes.
Under the effective mass approximation,the electron state is considered to be confined within a nc-Si/SiO2 spherical quantum dot with infinite barrier,and by using the compact density matrix method,the analytic expression for the resonant third-order susceptibilities was derived.According to numerical simulation,the relation of the third-order susceptibilities with quantum dot dimension,incident photo energy and various relaxation rate was discussed.The result shows that the third-order susceptibilities strongly depends on quantum dot dimensions,incident photon energy and various relaxation rate.The third-order susceptibilities increases with an increase in quantum dot dimension and incident photo energy and a decrease in various relaxation rate.