Single-photon (SP) sources are important for a number of optical quantum information processing applications. We study the possibility to integrate triggered solid-state SP emitters directly on a photonic chip. A major challenge consists in efficiently extracting their emission into a single guided mode. Using 3D finite-difference time-domain simulations, we investigate the SP emission from dipole-like nanometer-sized inclusions embedded into different silicon nitride (SiNx) photonic nanowire waveguide designs. We elucidate the effect of the geometry on the emission lifetime and the polarization of the emitted SP. The results show that highly efficient and polarized SP sources can be realized using suspended SiNx slot-waveguides. Combining this with the well-established CMOS-compatible processing technology, fully integrated and complex optical circuits for quantum optics experiments can be developed.
Single-photon (SP) sources are important for a number of optical quantum information processing applications. We study the possibility to integrate triggered solid-state SP emitters directly on a photonic chip. A major challenge consists in efficiently extracting their emission into a single guided mode. Using 3D finite-difference time-domain simulations, we investigate the SP emission from dipole-like nanometer-sized inclusions embedded into different silicon nitride (SiNx) photonic nanowire waveguide designs. We elucidate the effect of the geometry on the emission lifetime and the polarization of the emitted SP. The results show that highly efficient and polarized SP sources can be realized using suspended SiNx slot-waveguides. Combining this with the well-established CMOS-compatible processing technology, fully integrated and complex optical circuits for quantum optics experiments can be developed.
In the past decades quantum optics has been at the forefront of quantum innovative technologies. For practical applications, scalable platforms for implementation of quantum optical circuits are vital. This thesis presents two new platforms for scalable implementation of quantum optical circuits, namely, modular approach and monolithic integration. Here, we take the first steps towards the integration of three main elements of every quantum optics circuits: Single-photon emitters, single-photon detectors, and quantum logics. Until now, most quantum optical circuits used separate platforms for single-photon generation and detection. The main challenge in the integration of these technologies, which have different requirements, has slowed down the research in the field. Here, we integrate sources and detectors by first fabricating the devices on their own platform and then transferring and combining them together. Plasma enhanced chemical vapor deposition of silicon nitride followed by etching optical waveguides connect these elements. Removing the Poissonian optical excitation field from the quantum circuit is necessary for integration. Classical optical excitation can be avoided if the sources are electrically pumped. However, fabrication of high-quality electrically pumped sources, suitable for integration, has been limited. The experiments described in chapter 4 are our first step towards addressing the mentioned problem. Defect-free nanowires are grown on <100> direction and their optoelectronic performance are characterized. Nanowire quantum dots, thanks to their waveguiding, purity, coherence and their potentials for deterministic integration with other optical circuits, are promising single-photon sources for on-chip quantum optics. However, precise control of the emission energy of the quantum dots by growth has not become possible yet. Chapter 5 describes a method for on-chip tuning of emission energy of nanowire quantum dots using strain fields. We show the emission energy of independent nanowire quantum dots can be brought into degeneracy without affecting their single-photon emission properties. The quantum optical components have to be routed and connected together to form functional circuits. On a chip, this is usually carried out using optical waveguides. Moreover, manipulation of single photons has to be done in a scalable fashion. Again optical waveguides and ring resonators are very good candidates for this task. Therefore, understanding the behavior of these circuits such as their losses, polarization dependence, and temperature behavior is important. The experiment described in chapter 6 studies the behavior of plasma enhanced silicon nitride waveguides in cryogenic temperatures. We concluded in this chapter that due to weak thermo-optic sensitivity of silicon nitride at cryogenic temperatures, the available thermal budget on the system should be carefully considered. An important step in achieving a scalable platform for quantum optical circuits is deterministic and efficient integration of single-photon sources. In chapter 7, we demonstrate successful integration of III-V nanowire quantum dots with silicon nitride waveguides. The nanowires are deterministically selected and transferred from the original growth chip to the new substrate where they are integrated with low-loss silicon nitride waveguides. Our measurements show that the integrated sources preserve their high quality emission properties. In chapter 8, we describe an alternative approach: amodular method for scalable quantum optics. The proposed technique is based on coupling the single-photon from sources into optical fibers where the photons can be processed and then fed into the single-photon detectors. This approach has high flexibility and is easier to implement but as described in the chapter, at the moment, losses in the interfaces between optical fibers and single-photon sources are a major limiting factor. We conclude the thesis with some possible future directions and exciting new results on integration of single-photon detectors with sources and waveguides. Finally, primary results on on-chip single-photon filtering and removal of the optical excitation field are demonstrated.
The recent discovery of room-temperature intrinsic single-photon emitters in silicon nitride (SiN) 1 provides a unique opportunity for seamless monolithic integration of quantum light sources with the well-established SiN photonic platform. In this work, we successfully demonstrate the integration of intrinsic quantum emitters with planar waveguides composed of low-autofluorescence SiN and demonstrate single-photon emission coupling into the waveguide mode. The coupling of single-photon emission to the waveguide mode is confirmed by second-order autocorrelation measurements of light outcoupled off the photonic chip by grating couplers. Fitting the second-order autocorrelation histogram yields g (2) (0) = 0.15 ± 0.09 without spectral filtering or background correction, the outcoupled photon rate derived from saturation measurements is found to be 6 × 10 3 counts per second. This demonstrates the first successful coupling of photons from monolithically integrated SiN intrinsic single-photon emitters with waveguides composed of the same material. The results of our work pave the way toward the realization of scalable, technology-ready quantum photonic integrated circuitry efficiently interfaced with solid-state quantum emitters.
Single-photon sources are essential for quantum technologies, supporting secure communication, quantum computing, and integrated photonic systems. Nitrogen-vacancy (NV) centers in nanodiamonds are robust emitters that operate at room temperature and can be positioned on-chip, but efficient coupling to photonic modes remains challenging. We present the design, fabrication, and experimental characterization of a silicon nitride photonic structure engineered to enhance and extract emission from NV centers. The device features a subwavelength gap between waveguides, a Bragg reflector for emission redirection, and an output waveguide for collection. Simulations guided the optimization of the geometry to increase the spontaneous emission rate through photonic confinement. Nanodiamonds were deposited into the gap using lithographic patterning and drop-casting. Fluorescence lifetime measurements confirm that the structure modifies the emission dynamics of the NV centers. The approach is compatible with scalable fabrication techniques and offers a practical route toward integrated, chip-based single-photon sources.
Photonic integrated quantum circuits could fully unlock quantum systems' potential. However,monololithic platforms face several challenges. We explore hybrid quantum photonic integration, combining different photonic materials to mitigate monolithic approaches disadvantages . Our work introduces hybrid circuits integrating different quantum sources and materials. We present a technique integrating nanowire single photon sources with silicon nitride waveguides, enabling circuit reconfiguration and emission wavelength control using heat, and strain tuning which is compatible with superconducting single photon detectors . We realize a full quantum transceiver on chip using on demand single photon sources and SNSPDS, in additio to dispersion engineering of superconducting transmission lines for SNSPDs multi-pixel integration. We discuss progress towards room-temperature quantum integrated photonics using hexagonal boron nitride quantum emitters. Finally, we delve into scalable generation and quantum state reconstruction of W-states and construction using phase retrieval algorithms, and ongoing research on topological photonics, and photonic lattices.
Abstract The scaling of many photonic quantum information processing systems is ultimately limited by the flux of quantum light throughout an integrated photonic circuit. Source brightness and waveguide loss set basic limits on the on-chip photon flux. While substantial progress has been made, separately, towards ultra-low loss chip-scale photonic circuits and high brightness single-photon sources, integration of these technologies has remained elusive. Here, we report the integration of a quantum emitter single-photon source with a wafer-scale, ultra-low loss silicon nitride photonic circuit. We demonstrate triggered and pure single-photon emission into a Si3N4 photonic circuit with ≈ 1 dB/m propagation loss at a wavelength of ≈ 930 nm. We also observe resonance fluorescence in the strong drive regime, showing promise towards coherent control of quantum emitters. These results are a step forward towards scaled chip-integrated photonic quantum information systems in which storing, time-demultiplexing or buffering of deterministically generated single-photons is critical.
The capability of realizing quantum photonics implementations on-chip will have a strong impact on several aspects of quantum computation and information processing. The implementation of large scale integrated quantum photonic technologies requires on-chip reconfigurable waveguide circuits as well as single-photon sources and detectors. Many successes have been made in recent years to demonstrate complex quantum circuits in many material platforms. Among all these platforms, the Silicon-on-Insulator (SOI) platform is outstanding as it is well developed for classical applications and therefore deploys a high component density, mature fabrication techniques and compatibility with the telecom regime and the complementary metal-oxide-semiconductor (CMOS) technology. However, the lack of on-demand non-classical light sources, directly incorporated in silicon chips, forces the use of nonlinear processes to generate non-classical light states: the probabilistic nature of the emission process sets a limit in the maximally achievable experimental complexity. The use of on-demand sources will have a strong impact on the device’s scalability.