In this thesis the design and analysis of SIS-mixers (SIS: superconductor-isolator-superconductor) for the use as low-noise and broad-band detectors in the submm-region for astronomical observations is described. The SIS-mixers have been developed for the frequency band 2 (636-802 GHz) of the Heterodyne Instrument for the Far Infrared (HIFI) on ESA’s space-observatory Herschel. The required performance baseline has been defined by the HIFI-consortium in terms of the estimated noise temperature contribution of the mixer to be 110 K at 636 GHz and 150 K at 802 GHz. In the frequency region between 80 GHz and 900 GHz Heterodyne SIS mixers are established as the best devices for low noise mixing with a high spectral resolution (mixing of the signal radiation with local oscillator, LO). For the HIFI band 2 mixers, the technology of Nb/Al-Al2O3/Nb-junctions has been used with junction areas of 0.5-1.0 um2, a target value for the current density jc of 15 kA/cm2 and a gap-voltage of 2.75-2.77 mV. For the compensation of the SIS-junction’s intrinsic capacitance and the optimized power coupling to the tunnel junction, two types of matching circuits have been theoretically modelled and experimentally studied: (1) three-step transformer single junction devices and (2) double-junction devices. This has been done for two material combinations: for an all-superconductive micro strip NbTiN/SiO2/Nb, and for the superconductor/normal-conductor combination NbTiN/SiO2/Al...
In this thesis the design and analysis of SIS-mixers (SIS: superconductor-isolator-superconductor) for the use as low-noise and broad-band detectors in the submm-region for astronomical observations is described. The SIS-mixers have been developed for the frequency band 2 (636-802 GHz) of the Heterodyne Instrument for the Far Infrared (HIFI) on ESA’s space-observatory Herschel. The required performance baseline has been defined by the HIFI-consortium in terms of the estimated noise temperature contribution of the mixer to be 110 K at 636 GHz and 150 K at 802 GHz. In the frequency region between 80 GHz and 900 GHz Heterodyne SIS mixers are established as the best devices for low noise mixing with a high spectral resolution (mixing of the signal radiation with local oscillator, LO). For the HIFI band 2 mixers, the technology of Nb/Al-Al2O3/Nb-junctions has been used with junction areas of 0.5-1.0 um2, a target value for the current density jc of 15 kA/cm2 and a gap-voltage of 2.75-2.77 mV. For the compensation of the SIS-junction’s intrinsic capacitance and the optimized power coupling to the tunnel junction, two types of matching circuits have been theoretically modelled and experimentally studied: (1) three-step transformer single junction devices and (2) double-junction devices. This has been done for two material combinations: for an all-superconductive micro strip NbTiN/SiO2/Nb, and for the superconductor/normal-conductor combination NbTiN/SiO2/Al...
We present a low noise SIS mixer developed for the 1.2 THz band of the heterodyne spectrometer of the Herschel Space Observatory. With the launch of the Herschel SO in 2007, this device will be among the first SIS mixers flown in space. This SIS mixer has a quasi-optical design, with a double slot planar antenna and an extended spherical lens made of pure Si. The SIS junctions are Nb/AlN/NbTiN with a critical current density of about 30 KA/cm2 and with the junction area of a quarter of a micron square. Our mixer circuit uses two SIS junctions biased in parallel. To improve the simultaneous suppression of the Josephson current in each of them, we use diamond-shaped junctions. A low loss Nb/Au micro-strip transmission line is used for the first time in the mixer circuit well above the gap frequency of Nb. The minimum uncorrected Double Sideband receiver noise is 550 K (Y=1.34). The minimum receiver noise corrected for the local oscillator beam splitter and for the cryostat window is 340 K, about 6 hv/k, the lowest value achieved thus far in the THz frequencies range.
We have developed a wideband SIS mixer for the heterodyne instrument (HIFI Band 1) of ESA’s Herschel Space Observatory. This double-sideband mixer uses twin Nb/AlOx/Nb junctions and, without any mechanical tuner, covers a relative bandwidth greater than 30%, optimized in the Band 1 frequency range from 480 to 640 GHz . Two identical mixers will be used in orthogonal polarizations to make up the HIFI Band 1 receiver, which, with Bands 2 to 5, will be the first SIS receivers to ever fly in space. Therefore our mixers design and fabrication process include several innovations to meet the specifications requested by a space environment, such as high operation reliability, robustness to vibration, thermal variation and cosmic irradiation. This paper presents the characteristics of the flight model and the space qualification tests performed on the qualification model. The mixer’s performance analysis confirms that it has a very low noise (less than 3 times the quantum limit) over the entire bandwidth, as expected from early simulations.
We present a low noise SIS mixer developed for the 1.2 THz band of the heterodyne spectrometer of the Herschel Space Observatory. With the launch of the Herschel SO in 2007, this device will be among the first SIS mixers flown in space. This SIS mixer has a quasi optical design, with a double slot planar antenna and an extended spherical lens made of pure Si. The SIS junctions are Nb/A1N/NbTiN with a critical current density of about 30 KA/cm2 and with the junction area of a quarter of a micron square. Our mixer circuit uses two SIS junctions biased in parallel. To improve the simultaneous suppression of the Josephson current in each of them, we use diamond-shaped junctions. A low loss Nb/Au micro-strip transmission line is used for the first time in the mixer circuit well above the gap frequency of Nb. The minimum uncorrected Double Sideband receiver noise is 550 K (Y=1.34). The minimum receiver noise corrected for the local oscillator beam splitter and for the cryostat window is 340 K, about 6 hv/k, the lowest value achieved thus far in the THz frequencies range.
We summarize the development and the delivery of two SIS mixers for the 1.1-1.25 THz band of the heterodyne spectrometer of Herschel Observatory (HSO). The quasi-optical SIS mixer has two Nb/AlN/NbTiN junctions with the area of 0.25 um2. The Josephson critical current density in the junction is 30-50 kA/cm2. The tuning circuit integrated with SIS junction has the base electrode of Nb and a gold wire layer. With the new SIS mixers the test receiver maximum Y factor is 1.41. The minimum receiver uncorrected DSB noise temperature is 450 K. The SIS receiver noise corrected for the loss in the optics is 350-450 K across the 1100-1250 GHz band. The receiver has a uniform sensitivity in the full IF range of 4-8 GHz. The sub-micron sized SIS junction shape is optimized to ease the suppression of the Josephson current, and the receiver operation is stable. The measured mixer beam pattern is symmetrical and, in a good agreement with the requirements, has the f/d =4.25 at the central frequency of the operation band. The minimum DSB SIS receiver noise is close to 6 hv/k, the lowest value achieved thus far in the THz frequencies range.
This thesis describes the development of low-noise heterodyne receivers at THz frequencies for submillimeter astronomy using Nb-based superconductor-insulator-superconductor (SIS) tunneling junctions. The mixers utilize a quasi-optical configuration which consists of a planar twin-slot antenna and antisymmetrically-fed two-junctions on an antireflection-coated silicon hyperhemispherical lens. On-chip integrated tuning circuits, in the form of microstrip lines, are used to obtain maximum coupling efficiency in the designed frequency band. To reduce the rf losses in the integrated tuning circuits above the superconducting Nb gap frequency (~ 700 GHz), normal-metal Al is used to replace Nb as the tuning circuits. To account the rf losses in the micros trip lines, we calculated the surface impedance of the AI films using the nonlocal anomalous skin effect for finite thickness films. Nb films were calculated using the Mattis-Bardeen theory in the extreme anomalous limit. Our calculations show that the losses of the Al and Nb microstrip lines are about equal at 830 GHz. For Al-wiring and Nb-wiring mixers both optimized at 1050 GHz, the RF coupling efficiency of Al-wiring mixer is higher than that of Nb-wiring one by almost 50%. We have designed both Nb-wiring and Al-wiring mixers below and above the gap frequency. A Fourier transform spectrometer (FTS) has been constructed especially for the study of the frequency response of SIS receivers. This FTS features large aperture size (10 inch) and high frequency resolution (114 MHz). The FTS spectra, obtained using the SIS receivers as direct detectors on the FTS, agree quite well with our theoretical simulations. We have also, for the first time, measured the FTS heterodyne response of an SIS mixer at sufficiently high resolution to resolve the LO and the sidebands. Heterodyne measurements of our SIS receivers with Nb-wiring or Al-wiring have yielded results which arc among the best reported to date for broadband heterodyne receivers. The Nb-wiring mixers, covering 400 - 850 GHz band with four separate fixed-tuned mixers, have uncorrected DSB receiver noise temperature around 5hv/kb to 700 GHz, and better than 540 K at 808 GHz. An Al-wiring mixer designed for 1050 GHz band has an uncorrected DSB receiver noise temperature 840 K at 1042 GHz and 2.5 K bath temperature. Mixer performance analysis shows that Nb junctions can work well up to twice the gap frequency and the major cause of loss above the gap frequency is the rf losses in the microstrip tuning structures. Further advances in THz SIS mixers may be possible using circuits fabricated with higher-gap superconductors such as NbN. However, this will require high-quality films with low RF surface resistance at THz frequencies.
Heterodyne mixers based on superconducting SIS (superconductor-insulator-superconductor) tunnel junctions have been demonstrated to be the most sensitive coherent detectors at millimeter and submillimeter wavelengths. In fact, conventional superconducting SIS mixers with Nb/AlOx/Nb junction and Nb/SiO2/Nb tuning circuit have shown good performances with the noise temperature reaching as low as three times the quantum limit below 0.7THz, which is the gap frequency of Nb-based SIS junctions. However, due to the large loss in Nb thin-film superconducting microstrip lines, the noise performance of Nb SIS mixers deteriorates significantly above 0.7THz. With a gap frequency double that of Nb-based SIS junctions, NbN-based SIS junctions are of particular interest for the development of heterodyne mixers in the terahertz region. Considering the bandwidth and output power of local-oscillator (LO) signal sources are quite limited around 1THz, we firstly develop a waveguide NbN-based SIS mixer at 0.5THz. Three types of SIS junctions, i.e., long junction, parallel-connected tunnel junction (PCTJ) and distributed junction array (DJ) are investigated. They are all comprised of NbN-AlN-NbN tri-layer fabricated on an MgO substrate and have the same current density (Jc) of 10kA/cm2. In this paper, we describe their design, fabrication and preliminary experimental results.