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In-Vacuum Electronics for Microfabricated Ion Traps

Nicholas D. Guise, Spencer D. Fallek, Harley Hayden, C. S. Pai, Curtis Volin, Kenneth R. Brown, J. True Merrill, Jason Amini, Lisa M. Lust, Kelly Muldoon, Doug Carlson, Jerry Budach

Published Mar 14, 2014• 1 citation
OpenAlex

Abstract

The advent of microfabricated ion traps for the quantum information community has allowed research groups to build traps that incorporate an unprecedented number of trapping zones. However, as device complexity has grown, the number of digital-to-analog converter (DAC) channels needed to control these devices has grown as well, with some of the largest trap assemblies now requiring nearly one hundred DAC channels. Providing electrical connections for these channels into a vacuum chamber can be bulky and difficult to scale beyond the current numbers of trap electrodes. This paper reports on the development and testing of an in-vacuum DAC system that uses only 9 vacuum feedthrough connections to control a 78-electrode microfabricated ion trap. The system is characterized by trapping single and multiple 40Ca ions. The measured axial mode stability, ion heating rates, and transport fidelities for a trapped ion are comparable to systems with external (air-side) National Instruments PXI-6733 DACs.

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The advent of microfabricated ion traps for the quantum information community has allowed research groups to build traps that incorporate an unprecedented number of trapping zones. However, as device complexity has grown, the number of digital-to-analog converter (DAC) channels needed to control these devices has grown as well, with some of the largest trap assemblies now requiring nearly one hundred DAC channels. Providing electrical connections for these channels into a vacuum chamber can be bulky and difficult to scale beyond the current numbers of trap electrodes. This paper reports on the development and testing of an in-vacuum DAC system that uses only 9 vacuum feedthrough connections to control a 78-electrode microfabricated ion trap. The system is characterized by trapping single and multiple (40)Ca(+) ions. The measured axial mode stability, ion heating rates, and transport fidelities for a trapped ion are comparable to systems with external (air-side) commercial DACs.

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Development of microfabricated ion traps for scalable microwave quantum technology

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•Oct 31, 2014•0 citations
The advent of microfabricated ion traps for the quantum information community has allowed research groups to build traps that incorporate an unprecedented number of trapping zones. However, as device complexity has grown, the number of digital-to-analog converter (DAC) channels needed to control these devices has grown as well, with some of the largest trap assemblies now requiring nearly one hundred DAC channels. Providing electrical connections for these channels into a vacuum chamber can be bulky and difficult to scale beyond the current numbers of trap electrodes. This paper reports on the development and testing of an in-vacuum DAC system that uses only 9 vacuum feedthrough connections to control a 78-electrode microfabricated ion trap. The system is characterized by trapping single and multiple 40Ca ions. The measured axial mode stability, ion heating rates, and transport fidelities for a trapped ion are comparable to systems with external (air-side) National Instruments PXI-6733 DACs.
The advent of microfabricated ion traps for the quantum information community has allowed research groups to build traps that incorporate an unprecedented number of trapping zones. However, as device complexity has grown, the number of digital-to-analog converter (DAC) channels needed to control these devices has grown as well, with some of the largest trap assemblies now requiring nearly one hundred DAC channels. Providing electrical connections for these channels into a vacuum chamber can be bulky and difficult to scale beyond the current numbers of trap electrodes. This paper reports on the development and testing of an in-vacuum DAC system that uses only 9 vacuum feedthrough connections to control a 78-electrode microfabricated ion trap. The system is characterized by trapping single and multiple (40)Ca(+) ions. The measured axial mode stability, ion heating rates, and transport fidelities for a trapped ion are comparable to systems with external (air-side) commercial DACs.
Microfabricated ion traps are an important tool in the development of scalable quantum systems. Tremendous advancements towards an ion quantum computer were made in the past decade and most requirements for a quantum computer have been fulfilled in individual experiments. Incorporating all essential capabilities in a fully scalable system will require the further advancement of established quantum information technologies and development of new trap fabrication techniques. In my thesis I will discuss the theoretical background and experimental setup required for the operation of ion traps. Measurement of the important ion trap heating rate was performed in the setup and I will discuss the results in more detail. I will give a review of microfabrication processes used for the fabrication of traps, outlining advantages, disadvantages and issues inherent to the processes. Following the review I will present my work on a concept for a scalable ion trap quantum system based on microwave quantum gates and shuttling through X-junctions. Many of the required building blocks, including ion trap structures with current-carrying wires intended to create strong magnetic field gradients for microwave gates were investigated further. A novel fabrication process was developed to combine current-carrying wires with advanced multilayered ion trap structures. Several trap designs intended for proof of principle experiments of high fidelity microwave gates, advanced detection techniques and shuttling between electrically disconnected ion traps will be presented. Also the electrode geometry of an optimized X-junction design with strongly suppressed rf barrier height will be presented. Further, I developed several modifications for the experimental setup to extend the existing capabilities. A plasma source capable of performing in-situ cleans of the trap electrode surfaces, which has been demonstrated to dramatically reduce the heating rate in ion traps, was incorporated. I will also present a vacuum system modification designed to cool ion traps with current-carrying wires and transport the generated heat out of the vacuum system. In addition a novel low-noise, high-speed, multichannel voltage control system was developed by me. The device can be used in future experiments to precisely shuttle ions from one trapping zone to another and also to shuttle ions through ion trap junctions. Lastly I will outline the process optimization and microfabrication of my ion trap designs. A novel fabrication process which makes use of the extremely high thermal conductivity of diamond substrates and combines it with thick copper tracks embedded in the substrate was developed. Large currents will be passed through the wires creating a strong and controllable magnetic field gradient. Ion trap designs with isolated electrodes connected via buried wires can be placed on top of the current-carrying wires, allowing the most advanced electrode designs to be fabricated with current-carrying wires.
The scaling up of trapped-ion quantum processors based on the quantum charge-coupled device (QCCD) architecture is difficult owing to the extensive electronics and high-density wiring required to control numerous trap electrodes. In conventional QCCD architectures, each trap electrode is controlled via a dedicated digital-to-analog converter (DAC). The conventional approach places an overwhelming demand on electronic resources and wiring complexity. This is because the number of trap electrodes typically exceeds the number of trapped-ion qubits. This study proposes a method that leverages a high-speed DAC to generate time-division multiplexed signals to control a large-scale QCCD trapped-ion quantum processor. The proposed method replaces conventional DACs with a single high-speed DAC that generates the complete voltage waveforms required to control the trap electrodes, thereby significantly reducing the wiring complexity and overall resource requirements. Based on realistic parameters and commercially available electronics, our analysis demonstrates that a QCCD trapped-ion quantum computer with10,000\mathbf{1 0, 0 0 0}10,000trap electrodes can be controlled using only 13 field-programmable gate arrays and 104 high-speed DACs. This is in stark contrast to the10,000\mathbf{1 0, 0 0 0}10,000dedicated DACs required by conventional control methods. Consequently, employing this approach, we developed a proof-of-concept electronic system and evaluated its analog output performance.
Abstract Scaling trapped-ion quantum computing will require robust trapping of at least hundreds of ions over long periods, while increasing the complexity and functionality of the trap itself. Symmetric three-dimensional (3D) structures enable high trap depth, but microfabrication techniques are generally better suited to planar structures that produce less ideal conditions for trapping. We present an ion trap fabricated on stacked eight-inch wafers in a large-scale micro-electro-mechanical system microfabrication process that provides reproducible traps at a large volume. Electrodes are patterned on the surfaces of two opposing wafers bonded to a spacer, forming a 3D structure with 2.5 μm standard deviation in alignment across the stack. We implement a design achieving a trap depth of 1 eV for a 40Ca+ ion held at 200 μm from either electrode plane. We characterize traps, achieving measurement agreement with simulations to within ±5% for mode frequencies spanning 0.6–3.8 MHz, and evaluate stray electric field across multiple trapping sites. We measure motional heating rates over an extensive range of trap frequencies, and temperatures, observing 40 phonons/s at 1 MHz and 185 K. This fabrication method provides a highly scalable approach for producing a new generation of 3D ion traps.
State-of-the-art microfabricated ion traps for quantum information research are approaching nearly one hundred control electrodes. We report here on the development and testing of a new architecture for microfabricated ion traps, built around ball-grid array (BGA) connections, that is suitable for increasingly complex trap designs. In the BGA trap, through-substrate vias bring electrical signals from the back side of the trap die to the surface trap structure on the top side. Gold-ball bump bonds connect the back side of the trap die to an interposer for signal routing from the carrier. Trench capacitors fabricated into the trap die replace area-intensive surface or edge capacitors. Wirebonds in the BGA architecture are moved to the interposer. These last two features allow the trap die to be reduced to only the area required to produce trapping fields. The smaller trap dimensions allow tight focusing of an addressing laser beam for fast single-qubit rotations. Performance of the BGA trap as characterized with 40Ca+ ions is comparable to previous surface-electrode traps in terms of ion heating rate, mode frequency stability, and storage lifetime. We demonstrate two-qubit entanglement operations with 171Yb+ ions in a second BGA trap.
Abstract : State-of-the art micro-fabricated ion traps for quantum information research have grown to incorporate upwards of a hundred control electrodes. In the typical architecture, a surface-electrode ion trap is fabricated on a thin chip that sits atop an industry standard CPGA carrier. To supply DC potentials for each electrode, pads on the CPGA are wirebonded to pads on the trap chip, while on-chip surface capacitors suppress pickup from the RF trapping fields. For large numbers of electrodes, the physical area taken up by these wirebonds and filter capacitors present significant constraints for ion trap design and operation. We report here on the development and successful testing of a new architecture for microfabricated ion traps, built around ball-grid array (BGA) connections and trench capacitors. In the BGA trap, through-substrate vias (TSVs) are used to bring electrical signals from the back side of the trap die to the top side. Gold-ball bump bonds connect the back side of the trap die to a separate interposer for signal routing from the CPGA carrier. Trench capacitors fabricated into the trap die eliminate the need for surface capacitors, reducing the trap die area by 30x.