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Bulletin of the American Physical Society

Wide-range control of ion temperature in a linear rf ion trap

Mitsutoshi Aramaki, Akihiro Kono

Published Nov 1, 2006• 0 citations
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Molecular dynamics simulations of the ion clouds stored in a linear quadrupole rf ion trap are performed at low temperatures (0.1 mK--15 K). The introduction of periodic boundary conditions allowed us to study the translationally uniform ion cloud geometry. The time evolution of the kinetic energy of the ion cloud is monitored during the simulation and the increase in the kinetic energy of the cloud (rf heating) is determined; its dependence on temperature, trapping voltage, and the number of ions is studied. The dependence of rf heating rate on temperature shows that rf heating is undetectable until the temperature reaches approximately 0.5 K; it then increases rapidly until it reaches a maximum at around 2 K. It starts to decrease slowly at higher temperatures. The rf heating rate is shown to increase very sharply with the amplitude of the trapping voltage. The dependence of the rf heating rate on the number of ions shows the influence of the ion crystal shell structure at low temperatures, and has a simple linear dependence at higher temperatures.

Physical Review A•Mar 23, 2005•50 citations
State readout of trapped-ion qubits with trap-integrated detectors can address important challenges for scalable quantum computing, but the strong radio frequency (rf) electric fields used for trapping can impact detector performance. Here, we report on NbTiN superconducting nanowire single-photon detectors (SNSPDs) employing grounded aluminum mirrors as electrical shielding that are integrated into linear surface-electrode rf ion traps. The shielded SNSPDs can be operated at applied rf trapping potentials of up to 54 Vpeak at 70 MHz and temperatures of up to 6 K, with a maximum system detection efficiency of 68%. This performance should be sufficient to enable parallel high-fidelity state readout of a wide range of trapped ion species in a typical cryogenic apparatus.
The uncertainty of the ac Stark shift due to thermal radiation represents a major contribution to the systematic uncertainty budget of state-of-the-art optical atomic clocks. In the case of optical clocks based on trapped ions, the thermal behavior of the rf-driven ion trap must be precisely known. This determination is even more difficult when scalable linear ion traps are used. Such traps enable a more advanced control of multiple ions and have become a platform for new applications in quantum metrology, simulation, and computation. Nevertheless, their complex structure makes it more difficult to precisely determine its temperature in operation and thus the related systematic uncertainty. We present here scalable linear ion traps for optical clocks, which exhibit very low temperature rise under operation. We use a finite-element model refined with experimental measurements to determine the thermal distribution in the ion trap and the temperature at the position of the ions. The trap temperature is investigated at different rf-drive frequencies and amplitudes with an infrared camera and integrated temperature sensors. We show that for typical trapping parameters for In+, Al+, Lu+, Ca+, Sr+, or Yb+ ions, the temperature rise at the position of the ions resulting from rf heating of the trap stays below 700 mK and can be controlled with an uncertainty on the order of a few 100 mK maximum. The corresponding uncertainty of the trap-related blackbody radiation shift is in the low 10−19 and even 10−20 regime for 171Yb+(E3) and 115In+, respectively.
Molecular dynamics simulations of the ion clouds stored in a linear quadrupole rf ion trap are performed at low temperatures (0.1 mK--15 K). The introduction of periodic boundary conditions allowed us to study the translationally uniform ion cloud geometry. The time evolution of the kinetic energy of the ion cloud is monitored during the simulation and the increase in the kinetic energy of the cloud (rf heating) is determined; its dependence on temperature, trapping voltage, and the number of ions is studied. The dependence of rf heating rate on temperature shows that rf heating is undetectable until the temperature reaches approximately 0.5 K; it then increases rapidly until it reaches a maximum at around 2 K. It starts to decrease slowly at higher temperatures. The rf heating rate is shown to increase very sharply with the amplitude of the trapping voltage. The dependence of the rf heating rate on the number of ions shows the influence of the ion crystal shell structure at low temperatures, and has a simple linear dependence at higher temperatures.