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Soviet physics. Technical physics

Change in lasing parameters near a crystal-matrix phase transition

N. V. Shchedrina

Published Jul 1, 1983• 0 citations
OpenAlex

Abstract

Lasing processes involving local levels of impurity atoms and ions are considered and the properties of stimulated emissions near a crystal-matrix phase transition is considered. (AIP)

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The possibility of stimulated emission of coherent phonons by impurities (ions) embedded in a crystal is considered. It is shown that when the ions with homogeneously broadened levels are subjected to an electromagnetic field, the frequency Ω of which is larger than an eigenfrequency of the ion ω21, at the Raman frequency ωq=Ω−ω21, a coherent stimulated emission of phonons may emerge. The absorption rate of the pumping electromagnetic field has a singularity near the threshold of the phonon self-excitation.