Lasing processes involving local levels of impurity atoms and ions are considered and the properties of stimulated emissions near a crystal-matrix phase transition is considered. (AIP)
The possibility of stimulated emission of coherent phonons by impurities (ions) embedded in a crystal is considered. It is shown that when the ions with homogeneously broadened levels are subjected to an electromagnetic field, the frequency Ω of which is larger than an eigenfrequency of the ion ω21, at the Raman frequency ωq=Ω−ω21, a coherent stimulated emission of phonons may emerge. The absorption rate of the pumping electromagnetic field has a singularity near the threshold of the phonon self-excitation.