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Bulletin of the American Physical Society

Josephson Phase Qubits with Hydrogenated Amorphous Silicon Dielectric

M. Neeley, M. Ansmann, Radoslaw C. Bialczak, Nadav Y. Katz, Erik A. Lucero, R. McDermott, A. D. O’Connell, Matthias Steffen, Ewa Weig, A.N. Cleland, John M. Martinis

Published Mar 6, 2007• 0 citations
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At sub-Kelvin temperatures, two-level systems (TLSs) present in amorphous dielectrics source a permittivity noise, degrading the performance of a wide range of devices using superconductive resonators such as qubits or kinetic inductance detectors. We report here on measurements of TLS noise in hydrogenated amorphous silicon (a-Si:H) films deposited by plasma-enhanced chemical vapor deposition in superconductive lumped element resonators using parallel-plate capacitors. The TLS noise results presented in this article for two recipes of a-Si:H improve on the best results achieved in the literature by a factor >5 for a-Si:H and other amorphous dielectrics and are comparable to those observed for resonators deposited on crystalline dielectrics.