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Applied Physics Letters

Low two-level-system noise in hydrogenated amorphous silicon

Fabien Defrance, Andrew D. Beyer, Jordan Wheeler, Jack Sayers, S. R. Golwala

Published Mar 1, 2025• 2 citations
Publisher

Abstract

At sub-Kelvin temperatures, two-level systems (TLSs) present in amorphous dielectrics source a permittivity noise, degrading the performance of a wide range of devices using superconductive resonators such as qubits or kinetic inductance detectors. We report here on measurements of TLS noise in hydrogenated amorphous silicon (a-Si:H) films deposited by plasma-enhanced chemical vapor deposition in superconductive lumped element resonators using parallel-plate capacitors. The TLS noise results presented in this article for two recipes of a-Si:H improve on the best results achieved in the literature by a factor >5 for a-Si:H and other amorphous dielectrics and are comparable to those observed for resonators deposited on crystalline dielectrics.

DOI
10.1063/5.0255172

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TLS noise reduction in microwave kinetic inductance detectors using a parallel plate capacitor with a three-layer dielectric

Fatemeh Zahra Ehsani

Over the past two decades, microwave kinetic inductance detectors (MKIDs) have gained exceptional importance in millimeter and sub-millimeter astronomy. MKIDs consist of thin strip resonators capable of detecting changes in the surface impedance of superconductor strips, which result from variations in resonance circuit properties. The principal noise in MKIDs comprises excess frequency noise and two-level system noise. In this paper, we propose a technique to mitigate the effect of two-level system (TLS) noise in MKIDs using a parallel plate capacitor with three layers of high ε dielectrics. To achieve this, we employ three layers of Al2O3, HfO2, and TiO2 with equal thickness between the capacitor plates. The experimental results demonstrate a nearly 30% reduction in TLS power spectral density.

Advances in Analytic Science•Sep 30, 2024•0 citations
At sub-Kelvin temperatures, two-level systems (TLSs) present in amorphous dielectrics source a permittivity noise, degrading the performance of a wide range of devices using superconductive resonators such as qubits or kinetic inductance detectors. We report here on measurements of TLS noise in hydrogenated amorphous silicon (a-Si:H) films deposited by plasma-enhanced chemical vapor deposition in superconductive lumped element resonators using parallel-plate capacitors. The TLS noise results presented in this article for two recipes of a-Si:H improve on the best results achieved in the literature by a factor >5 for a-Si:H and other amorphous dielectrics and are comparable to those observed for resonators deposited on crystalline dielectrics.
At sub-Kelvin temperatures, two-level systems (TLS) present in amorphous dielectrics source a permittivity noise, degrading the performance of a wide range of devices using superconductive resonators such as qubits or kinetic inductance detectors. We report here on measurements of TLS noise in hydrogenated amorphous silicon (a-Si:H) films deposited by plasma-enhanced chemical vapor deposition (PECVD) in superconductive lumped-element resonators using parallel-plate capacitors (PPCs). The TLS noise results presented in this article for two recipes of a-Si:H improve on the best achieved in the literature by a factor >5 for a-Si:H and other amorphous dielectrics and are comparable to those observed for resonators deposited on crystalline dielectrics.
Two-level systems (TLS) are an important, if not dominant, source of loss and noise for superconducting resonators such as those used in kinetic inductance detectors and some quantum information science platforms. They are similarly important for loss in photolithographically fabricated superconducting mm-wave/THz transmission lines. For both lumped-element and transmission-line structures, native amorphous surface oxide films are typically the sites of such TLS in nonmicrostripline geometries, while loss in the (usually amorphous) dielectric film itself usually dominates in microstriplines. We report here on the demonstration of low TLS loss at GHz frequencies in hydrogenated amorphous silicon (a-Si:H) films deposited by plasma-enhanced chemical vapor deposition in superconducting lumped-element resonators using parallel-plate capacitors (PPCs). The values we obtain from two recipes in different deposition machines, $7\ifmmode\times\else\texttimes\fi{}{10}^{\ensuremath{-}6}$ and $12\ifmmode\times\else\texttimes\fi{}{10}^{\ensuremath{-}6}$, improve on the best achieved in the literature by a factor of 2--4 for a-Si:H and are comparable to recent measurements of amorphous germanium. Moreover, we have taken care to extract the true zero-temperature, low-field loss tangent of these films, accounting for temperature and field saturation effects that can yield misleading results. Such robustly fabricated and characterized films render the use of PPCs with deposited amorphous films a viable architecture for superconducting resonators and they also promise extremely low loss and high quality factor for photolithographically fabricated superconducting mm-wave/THz transmission lines used in planar antennas and resonant filters.
Amorphous hydrogenated silicon (a-Si:H) based lumped elements are one of the promising ways for large-scale integration of superconducting quantum devices. We present a detailed study devoted to the plasma-enhanced chemical vapor deposition process parameters' influence on the structure and morphology of a-Si:H dielectric thin films. We experimentally demonstrate a microcrystalline-to-amorphous growth transition by changing the H2/SiH4 ratio and establish a relationship between the film's structure, thickness, and dielectric loss tangent (tan δ). It is shown that the best dielectric loss tangents of tan δLP = 4.5 × 10−5 (average 9.2 × 10−5) and tan δHP = 1.0 × 10−6 (average 1.2 × 10−6) for superconducting lumped elements with 350 nm-thick amorphous films can be achieved in single- and multi-photon regimes at sub-20 mK, correspondingly. These values are extracted by characterizing superconducting resonators with integrated parallel-plate capacitors (C = 0.2…6.0 pF) for a frequency range from 4.0 to 7.0 GHz. The presented low-loss a-Si:H films can be useful for various superconducting quantum applications, which is illustrated by the fabrication of lumped-element bandpass filters with a well-predicted amplitude–frequency response characteristic.
The improvement of the coherence times of superconducting qubits depends on the reduction of the dielectric losses in the insulating materials implemented for the device fabrication. These losses depend on the density of spurious dipoles of different nature (two-level systems, TLSs) which couple to phase qubits and, hence, limit their coherence times. Hydrogenated amorphous silicon (a-Si:H), because of its lower loss tangent (tan δ) among conventional dielectrics (a-SiO, a-SiO2, a-SiNx:H), is considered as the best amorphous dielectric for superconducting qubit application. We have developed a reliable method for the direct measurement of dielectric losses in amorphous dielectric thin films using a novel design based on four lumped superconducting LC resonators connected in series without coupling capacitors. The losses are obtained as tan δ = 1/Q0, where Q0 is the intrinsic quality factor of the resonator, measured at 3 dB above the resonance frequency without any fitting procedure. The series type LC resonators with a-Si:H as dielectric were fabricated by the Nb technology. The measurements were done at the conditions of a qubit application (0.5 -10 GHz frequency range and low temperatures). The low values of the loss tangent of a-Si:H (up to 2.5 x 10−5 at 4.2 K) have required the development of superconducting housing for the resonators in order to eliminate a spurious dependence of tan δ on the microwave power, by reducing losses which were not originated in the dielectric itself. The results of the simulations agree well with the experiments.
Parallel-plate capacitors (PPC) significantly reduce the size of superconducting microwave resonators, reducing the pixel pitch for arrays of single-photon energy-resolving kinetic inductance detectors (KIDs). The frequency noise of KIDs is typically limited by tunneling two-level systems (TLS), which originate from lattice defects in the dielectric materials required for PPCs. How the frequency noise level depends on the PPC's dimensions has not been experimentally addressed. We measure the frequency noise of 56 resonators with aaa-SiC\mathrm{Si}\mathrm{C}SiC:H\mathrm{H}H PPCs, which cover a factor of 44 in PPC area and a factor of 4 in dielectric thickness. To support the noise analysis, we measure the resonators' TLS-induced power-dependent intrinsic loss and temperature-dependent resonance frequency shift. From the TLS models, we expect a geometry-independent microwave loss and resonance frequency shift, which is set by the TLS properties of the dielectric. However, we observe a thickness-dependent microwave loss and resonance frequency shift; this is explained by surface layers that limit the performance of PPC-based resonators. For a uniform dielectric, the frequency noise level should scale directly inversely with the PPC area and thickness. We observe that an increase in PPC size reduces the frequency noise, but the exact scaling is, in some cases, weaker than expected. Finally, we derive engineering guidelines for the design of KIDs based on PPC-based resonators.
Over the past two decades, microwave kinetic inductance detectors (MKIDs) have gained exceptional importance in millimeter and sub-millimeter astronomy. MKIDs consist of thin strip resonators capable of detecting changes in the surface impedance of superconductor strips, which result from variations in resonance circuit properties. The principal noise in MKIDs comprises excess frequency noise and two-level system noise. In this paper, we propose a technique to mitigate the effect of two-level system (TLS) noise in MKIDs using a parallel plate capacitor with three layers of high ε dielectrics. To achieve this, we employ three layers of Al2O3, HfO2, and TiO2 with equal thickness between the capacitor plates. The experimental results demonstrate a nearly 30% reduction in TLS power spectral density.