Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Log inSign up
Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Blog
Job Board
Q3AS

© 2026 Aqora Quantum S.A.S.

TermsPrivacyLegal Notice

Lawrence Berkeley National Laboratory

Low noise radio frequency amplifiers based on niobium dc SQUIDs with microstrip input coupling

Michael Mück, Jost Gail, Christoph Heiden, Marc-Olivier André, John L. Clarke

Published Mar 1, 1998• 1 citation
OpenAlex

Abstract

Certain applications such us cmon detectors require radio frequency (rj) amplifiers uuli noisi temperatures ut// below I k litis need cannot be met with current semiconductor amph/icis which have minimum noise temperatures of 2 oi 3 K even when tooled to liquid helium temperatures or below I unci noise Icmpetalutes can be obtained by using a dc SQUID us an rf amplifier II e ha\e curried out experiments using a dc SQUID to amplify rf signals that were coupled to one end of the microstrip which is formed bv the input coil of the SQUID and the SQUID washer We achieved gams of up to 20 dl) in the fiequenes range of 100 MHz to 900 MHz With a bath temperature of 4 2 K and a loom temperature post-amplifier the system noise temperature ranged from 0 5 K ± 0 3k at <S0 \IH: to 3 0 K ± 0 7 K at 500 MHz Particularly at frequencies above 350 MHz hosvever the measured noise temperature svas determined bv the noise of the semiconductor post-amplifier (I s x SOK) rather than the SQUID When sic cooled the SQUID down to I H K and used a cooled posl-amplifiei consisting of a helero-fteld effect tiansistor (IITEl) with a noise temperature of 12 K we measured a ssstcm noise lemperaiuie of I) 3 k ± 0 15 Kat 250 MHz and 0 25 K t 0 15 k at 365 Mil: DISCLAIMER This document was prepared as an account of work sponsored by the United States Government.While this document is believed to contain correct information, neither the United States Government nor any agency thereof, nor the Regents of the University of California, nor any of their employees, makes any warranty, express or implied, or assumes any legal responsibility for the accuracy, completeness, or usefulness of any information, apparatus, product, or process disclosed, or represents that its use would not infringe privately owned rights.Reference herein to any specific commercial product, process, or service by its trade name, trademark, manufacturer, or otherwise, does not necessarily constitute or imply its endorsement, recommendation, or favoring by the United States Government or any agency thereof, or the Regents of the University of California.The views and opinions of authors expressed herein do not necessarily state or reflect those of the United States Government or any agency thereof or the Regents of the University of California.

Related papers

Radio-frequency amplifier based on a niobium dc superconducting quantum interference device with microstrip input coupling

Michael Mück, Marc-Olivier André, John L. Clarke +2 more

A dc superconducting quantum interference device (SQUID) was used to amplify radio-frequency signals that were coupled to one end of the microstrip formed by the input coil and the SQUID washer. For one device, the resonant frequency of the microstrip was increased from about 200 to 620 MHz by progressively shortening the length of the coil. At an operating temperature of 4.2 K, the gain was typically 18 dB, and the system noise temperature ranged from 0.5±0.3 K at 80 MHz to 3.0±0.7 K at 500 MHz.

Applied Physics Letters•Jun 1, 1998•99 citations

Radio-frequency amplifiers based on dc SQUIDs

Michael Mück, R. McDermott

SQUIDs are an attractive candidate for the amplification of low-level rf and microwave signals. Compared to semiconductor amplifiers, they offer lower noise and much lower power dissipation. Especially at frequencies below 1 GHz, the improvement in noise temperature compared to the best cold semiconductor amplifiers can be as high as 50; noise temperatures only slightly above the quantum limit have been achieved in this frequency range. This article will review the current status of radio-frequency amplifiers based on dc SQUIDs and provide detailed discussions of amplifier noise temperature, input and output impedance, and nonlinearities.

Superconductor Science and Technology•Jul 19, 2010•49 citations

Radio-frequency amplifier with tenth-kelvin noise temperature based on a microstrip direct current superconducting quantum interference device

Marc-Olivier André, Michael Mück, John L. Clarke +2 more

A dc superconducting quantum interference device (SQUID) with a resonant microstrip input and a cooled heterostructure field-effect transistor as a postamplifier is used as a radio-frequency amplifier in the frequency range 90–500 MHz. At liquid He3 temperatures, gains of 24 and 20 dB and intrinsic noise temperatures of 0.06±0.02 and 0.12±0.10 K were achieved at 89.6 and 438 MHz, respectively. The system noise temperature at 438 MHz was also estimated from the Nyquist noise produced by a resonant circuit coupled to the input of the microstrip SQUID.

Applied Physics Letters•Aug 2, 1999•38 citations

DC SQUID RF amplifiers

Michael A. Tarasov, Victor Y. Belitsky, G.V. Prokopenko

The noise and signal parameters of several types of RF amplifiers based on different SQUIDs with integrated and hybrid input coils were studied. A new type of multiloop DC SQUID with an integrated input coil and extremely low stray capacitances was designed. The inductance of a four-loop SQUID was 100 pH, the input coil inductance 1.3 nH, and mutual inductance 300 pH. The tuned integrated four-loop amplifier at 420 MHz had a noise temperature lower 0.5 K and a power gain of nearly 20 dB in a 60-MHz bandwidth. For the noise calibration of such amplifiers, SIS junctions were used as a shot noise source, or a cooled attenuator and a room temperature semiconductor noise source were used.>

IEEE Transactions on Applied Superconductivity•Jun 1, 1992•15 citations

Radiofrequency amplifier based on a dc superconducting quantum interference device

Claude Hilbert

A low noise radiofrequency amplifier (10), using a dc SQUID (superconducting quantum interference device) as the input amplifying element. The dc SQUID (11) and an input coil (12) are maintained at superconductivity temperatures in a superconducting shield (13), with the input coil (12) inductively coupled to the superconducting ring (17) of the dc SQUID (11). A radiofrequency signal from outside the shield (13) is applied to the input coil (12), and an amplified radiofrequency signal is developed across the dc SQUID ring (17) and transmitted to exteriorly of the shield (13). A power gain of 19.5.+-.0.5 dB has been achieved with a noise temperature of 1.0.+-.0.4 K. at a frequency of 100 MHz.

•Jan 23, 2023•1 citation

Low-noise S-band DC SQUID based amplifier

G.V. Prokopenko, S. V. Shitov, D Balashov +3 more

A low-noise rf amplifier based on a dc SQUID (SQA) is tested in the frequency range 3.3-4.1 GHz. A new signal launching system for the SQA rf coupling has been developed and successfully implemented. The following parameters have been measured at 3.65 GHz using a band-pass filter at the input of a single-stage SQA: gain (11.0/spl plusmn/1.0) dB, 3 dB bandwidth of 300 MHz and noise temperature (4.0/spl plusmn/1.0)K. This figure corresponds to a flux noise S/sub /spl Phi///sup 1/2 /=0.6 /spl mu//spl Phi//sub 0//Hz/sup 1/2 / and an energy sensitivity /spl epsi//sub i//spl ap/75 h. The input saturation power, P/sub s/, (1 dB gain compression) is measured for different bandwidths of the input band-pass filter, A corresponding input signal saturation temperature (normalized for a 1 GHz bandwidth) T/sub SAT//sup 1GHZ/=P/sub SAT//k/sub B/ is estimated to be 11.5 K GHz at an SQA bias voltage 27 /spl mu/V (condition for minimum noise temperature). The dependencies of the SQA gain, noise temperature and saturation level on the operation point are studied. The reason for the SQA saturation is discussed.

IEEE Transactions on Applied Superconductivity•Mar 1, 2001•11 citations
Certain applications such us cmon detectors require radio frequency (rj) amplifiers uuli noisi temperatures ut// below I k litis need cannot be met with current semiconductor amph/icis which have minimum noise temperatures of 2 oi 3 K even when tooled to liquid helium temperatures or below I unci noise Icmpetalutes can be obtained by using a dc SQUID us an rf amplifier II e ha\e curried out experiments using a dc SQUID to amplify rf signals that were coupled to one end of the microstrip which is formed bv the input coil of the SQUID and the SQUID washer We achieved gams of up to 20 dl) in the fiequenes range of 100 MHz to 900 MHz With a bath temperature of 4 2 K and a loom temperature post-amplifier the system noise temperature ranged from 0 5 K ± 0 3k at <S0 \IH: to 3 0 K ± 0 7 K at 500 MHz Particularly at frequencies above 350 MHz hosvever the measured noise temperature svas determined bv the noise of the semiconductor post-amplifier (I s x SOK) rather than the SQUID When sic cooled the SQUID down to I H K and used a cooled posl-amplifiei consisting of a helero-fteld effect tiansistor (IITEl) with a noise temperature of 12 K we measured a ssstcm noise lemperaiuie of I) 3 k ± 0 15 Kat 250 MHz and 0 25 K t 0 15 k at 365 Mil: DISCLAIMER This document was prepared as an account of work sponsored by the United States Government.While this document is believed to contain correct information, neither the United States Government nor any agency thereof, nor the Regents of the University of California, nor any of their employees, makes any warranty, express or implied, or assumes any legal responsibility for the accuracy, completeness, or usefulness of any information, apparatus, product, or process disclosed, or represents that its use would not infringe privately owned rights.Reference herein to any specific commercial product, process, or service by its trade name, trademark, manufacturer, or otherwise, does not necessarily constitute or imply its endorsement, recommendation, or favoring by the United States Government or any agency thereof, or the Regents of the University of California.The views and opinions of authors expressed herein do not necessarily state or reflect those of the United States Government or any agency thereof or the Regents of the University of California.
A dc superconducting quantum interference device (SQUID) was used to amplify radio-frequency signals that were coupled to one end of the microstrip formed by the input coil and the SQUID washer. For one device, the resonant frequency of the microstrip was increased from about 200 to 620 MHz by progressively shortening the length of the coil. At an operating temperature of 4.2 K, the gain was typically 18 dB, and the system noise temperature ranged from 0.5±0.3 K at 80 MHz to 3.0±0.7 K at 500 MHz.
SQUIDs are an attractive candidate for the amplification of low-level rf and microwave signals. Compared to semiconductor amplifiers, they offer lower noise and much lower power dissipation. Especially at frequencies below 1 GHz, the improvement in noise temperature compared to the best cold semiconductor amplifiers can be as high as 50; noise temperatures only slightly above the quantum limit have been achieved in this frequency range. This article will review the current status of radio-frequency amplifiers based on dc SQUIDs and provide detailed discussions of amplifier noise temperature, input and output impedance, and nonlinearities.
A dc superconducting quantum interference device (SQUID) with a resonant microstrip input and a cooled heterostructure field-effect transistor as a postamplifier is used as a radio-frequency amplifier in the frequency range 90–500 MHz. At liquid He3 temperatures, gains of 24 and 20 dB and intrinsic noise temperatures of 0.06±0.02 and 0.12±0.10 K were achieved at 89.6 and 438 MHz, respectively. The system noise temperature at 438 MHz was also estimated from the Nyquist noise produced by a resonant circuit coupled to the input of the microstrip SQUID.
The noise and signal parameters of several types of RF amplifiers based on different SQUIDs with integrated and hybrid input coils were studied. A new type of multiloop DC SQUID with an integrated input coil and extremely low stray capacitances was designed. The inductance of a four-loop SQUID was 100 pH, the input coil inductance 1.3 nH, and mutual inductance 300 pH. The tuned integrated four-loop amplifier at 420 MHz had a noise temperature lower 0.5 K and a power gain of nearly 20 dB in a 60-MHz bandwidth. For the noise calibration of such amplifiers, SIS junctions were used as a shot noise source, or a cooled attenuator and a room temperature semiconductor noise source were used.>
A low noise radiofrequency amplifier (10), using a dc SQUID (superconducting quantum interference device) as the input amplifying element. The dc SQUID (11) and an input coil (12) are maintained at superconductivity temperatures in a superconducting shield (13), with the input coil (12) inductively coupled to the superconducting ring (17) of the dc SQUID (11). A radiofrequency signal from outside the shield (13) is applied to the input coil (12), and an amplified radiofrequency signal is developed across the dc SQUID ring (17) and transmitted to exteriorly of the shield (13). A power gain of 19.5.+-.0.5 dB has been achieved with a noise temperature of 1.0.+-.0.4 K. at a frequency of 100 MHz.
A low-noise rf amplifier based on a dc SQUID (SQA) is tested in the frequency range 3.3-4.1 GHz. A new signal launching system for the SQA rf coupling has been developed and successfully implemented. The following parameters have been measured at 3.65 GHz using a band-pass filter at the input of a single-stage SQA: gain (11.0/spl plusmn/1.0) dB, 3 dB bandwidth of 300 MHz and noise temperature (4.0/spl plusmn/1.0)K. This figure corresponds to a flux noise S/sub /spl Phi///sup 1/2 /=0.6 /spl mu//spl Phi//sub 0//Hz/sup 1/2 / and an energy sensitivity /spl epsi//sub i//spl ap/75 h. The input saturation power, P/sub s/, (1 dB gain compression) is measured for different bandwidths of the input band-pass filter, A corresponding input signal saturation temperature (normalized for a 1 GHz bandwidth) T/sub SAT//sup 1GHZ/=P/sub SAT//k/sub B/ is estimated to be 11.5 K GHz at an SQA bias voltage 27 /spl mu/V (condition for minimum noise temperature). The dependencies of the SQA gain, noise temperature and saturation level on the operation point are studied. The reason for the SQA saturation is discussed.