SQUIDs are an attractive candidate for the amplification of low-level rf and microwave signals. Compared to semiconductor amplifiers, they offer lower noise and much lower power dissipation. Especially at frequencies below 1 GHz, the improvement in noise temperature compared to the best cold semiconductor amplifiers can be as high as 50; noise temperatures only slightly above the quantum limit have been achieved in this frequency range. This article will review the current status of radio-frequency amplifiers based on dc SQUIDs and provide detailed discussions of amplifier noise temperature, input and output impedance, and nonlinearities.
SQUIDs are an attractive candidate for the amplification of low-level rf and microwave signals. Compared to semiconductor amplifiers, they offer lower noise and much lower power dissipation. Especially at frequencies below 1 GHz, the improvement in noise temperature compared to the best cold semiconductor amplifiers can be as high as 50; noise temperatures only slightly above the quantum limit have been achieved in this frequency range. This article will review the current status of radio-frequency amplifiers based on dc SQUIDs and provide detailed discussions of amplifier noise temperature, input and output impedance, and nonlinearities.
Certain applications such us cmon detectors require radio frequency (rj) amplifiers uuli noisi temperatures ut// below I k litis need cannot be met with current semiconductor amph/icis which have minimum noise temperatures of 2 oi 3 K even when tooled to liquid helium temperatures or below I unci noise Icmpetalutes can be obtained by using a dc SQUID us an rf amplifier II e ha\e curried out experiments using a dc SQUID to amplify rf signals that were coupled to one end of the microstrip which is formed bv the input coil of the SQUID and the SQUID washer We achieved gams of up to 20 dl) in the fiequenes range of 100 MHz to 900 MHz With a bath temperature of 4 2 K and a loom temperature post-amplifier the system noise temperature ranged from 0 5 K ± 0 3k at <S0 \IH: to 3 0 K ± 0 7 K at 500 MHz Particularly at frequencies above 350 MHz hosvever the measured noise temperature svas determined bv the noise of the semiconductor post-amplifier (I s x SOK) rather than the SQUID When sic cooled the SQUID down to I H K and used a cooled posl-amplifiei consisting of a helero-fteld effect tiansistor (IITEl) with a noise temperature of 12 K we measured a ssstcm noise lemperaiuie of I) 3 k ± 0 15 Kat 250 MHz and 0 25 K t 0 15 k at 365 Mil: DISCLAIMER This document was prepared as an account of work sponsored by the United States Government.While this document is believed to contain correct information, neither the United States Government nor any agency thereof, nor the Regents of the University of California, nor any of their employees, makes any warranty, express or implied, or assumes any legal responsibility for the accuracy, completeness, or usefulness of any information, apparatus, product, or process disclosed, or represents that its use would not infringe privately owned rights.Reference herein to any specific commercial product, process, or service by its trade name, trademark, manufacturer, or otherwise, does not necessarily constitute or imply its endorsement, recommendation, or favoring by the United States Government or any agency thereof, or the Regents of the University of California.The views and opinions of authors expressed herein do not necessarily state or reflect those of the United States Government or any agency thereof or the Regents of the University of California.
Superconducting quantum interference device (SQUID) is a sensitive detector of magnetic flux signals. Up to now, the main application of SQUIDs has been measurements of magnetic flux signals in the frequency range from near DC to several MHz. Recently, cryogenic low-noise radio-frequency (RF) amplifiers based on DC SQUID are under development aiming to detect RF signals with sensitivity approaching quantum limit. In this paper, we review the recent progress of cryogenic low-noise RF amplifiers based on SQUID technology.
The dc SQUID based RF amplifier (SQA) looks very attractive as an IF amplifier for integration with a SIS mixer and a flux-flow oscillator (FFO) in a fully superconducting submillimeter wave receiver suitable for space applications. Important advantages of the SQA are its low noise, extremely low power consumption, and complete compatibility with the fabrication process currently used for SIS mixers. Single stage amplifiers with a novel signal coupling circuit have been developed and tested in the frequency range 3.6-4.1 GHz. The 1 /spl mu/m/sup 2/ area Nb-AlO/sub x/-Nb junctions shunted by Ti resistors are grouped in a double washer dc SQUID. Two samples with slightly different designs showed the following gain, noise temperature and 3 dB bandwidth: 10.0/spl plusmn/1 dB, 5.0/spl plusmn/1.5 K, 3.86-3.90 GHz, and 6.8/spl plusmn/1 dB, 22/spl plusmn/7 K, 3.89-4.05 GHz, respectively.
A low-noise rf amplifier based on a dc SQUID (SQA) is tested in the frequency range 3.3-4.1 GHz. A new signal launching system for the SQA rf coupling has been developed and successfully implemented. The following parameters have been measured at 3.65 GHz using a band-pass filter at the input of a single-stage SQA: gain (11.0/spl plusmn/1.0) dB, 3 dB bandwidth of 300 MHz and noise temperature (4.0/spl plusmn/1.0)K. This figure corresponds to a flux noise S/sub /spl Phi///sup 1/2 /=0.6 /spl mu//spl Phi//sub 0//Hz/sup 1/2 / and an energy sensitivity /spl epsi//sub i//spl ap/75 h. The input saturation power, P/sub s/, (1 dB gain compression) is measured for different bandwidths of the input band-pass filter, A corresponding input signal saturation temperature (normalized for a 1 GHz bandwidth) T/sub SAT//sup 1GHZ/=P/sub SAT//k/sub B/ is estimated to be 11.5 K GHz at an SQA bias voltage 27 /spl mu/V (condition for minimum noise temperature). The dependencies of the SQA gain, noise temperature and saturation level on the operation point are studied. The reason for the SQA saturation is discussed.
Integrated radio-frequency amplifiers comprising a 4-loop dc SQUID, seriesly connected input coil turns, a resonant capacitor parallel to the input coil, series capacitors at the input and output ports and bias resistors have been designed, fabricated and experimentally studied. A multiloop dc SQUID with parallel loops and seriesly connected single-turn input coils placed inside each loop and integration with the input resonant matching circuit elements and with elements of dc bias circuit allows one to increase signal frequency and reduce the influence of external noise. The amplifiers with three different capacitors have resonant frequencies 560, 656, 758 MHz and bandwidth about 50 MHz. The noise temperature of such amplifiers below 1.5 K has been measured using cold attenuator and room-temperature noise sources. The layout comprising three pairs of such amplifiers placed on the same 15/spl times/24 mm substrate was designed to increase the bandwidth over the bandwidth of the individual amplifiers.>
The noise and signal parameters of several types of RF amplifiers based on different SQUIDs with integrated and hybrid input coils were studied. A new type of multiloop DC SQUID with an integrated input coil and extremely low stray capacitances was designed. The inductance of a four-loop SQUID was 100 pH, the input coil inductance 1.3 nH, and mutual inductance 300 pH. The tuned integrated four-loop amplifier at 420 MHz had a noise temperature lower 0.5 K and a power gain of nearly 20 dB in a 60-MHz bandwidth. For the noise calibration of such amplifiers, SIS junctions were used as a shot noise source, or a cooled attenuator and a room temperature semiconductor noise source were used.>