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Wideband low-noise integrated SQUID systems

M. Podt

Published Jan 17, 2003• 6 citations
Publisher

Abstract

Cover: Optical micrographs of (from left to right): Ramp-type Nb/Al,AlOx/Al/Nb Josephson junctions, a single dc SQUID of the prototype coded SQUID arrays and the first dc SQUID based on ramp-type Nb/Al,AlOx/Al/Nb junctions. Background: Sensor SQUID of a two-stage SQUID system.
DOI
10.3990/1.9789036518369

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The authors have designed, fabricated and tested all-refractory DC SQUIDs in Nb-Al/sub 2/O/sub 3/-Nb trilayer technology that have noise performance comparable to the best previously reported for any technology. A variety of SQUID designs were incorporated as part of a trilayer process development test vehicle. SQUID inductance, junction area, and resistive shunt geometry were varied in matrix fashion to give SQUIDs with near-optimum parameter values for a factor of five range in Josephson current density and shunt sheet resistance. The devices were fabricated using a selective niobium anodization with a minimum feature size of 2 mu m. The base electrode and Nb wiring were patterned with dry etching, and the junction areas were defined by anodization: the Ti resistors were patterned with a lift-off process. Current density on different wafers was varied from 400 to 1000 A/cm/sup 2/ with typical junction V/sub m/'s of 60 mV. The shunt sheet resistance was varied in the 1-5- Omega / Square Operator range. The noise was measured with an RF SQUID direct small-signal readout scheme. A 50-pH SQUID with 3- mu m/sup 2/, 16- mu A junctions and 14- Omega shunt resistors was shown to have an ideally low white noise of 1*10/sup -13/ Phi /sub 0//sup 2//Hz, a white to 1/f crossover frequency at 7 Hz, and a noise level less than 6*10/sup -12/ Phi /sub 0//sup 2//Hz at 0.1 Hz.
Superconductor–insulator–superconductor Josephson junctions with an area smaller than 1 µm 2 are increasingly used for many applications because of their low capacitances and short switching times. The characteristics of analogue and digital SQUIDs, for example, can be improved using small-area Josephson junctions. We have developed Nb/Al, AlO x /Al/Nb junctions based on an edge geometry. These low- T c ramp-type junctions allow sub-µm 2 junction areas using micrometre resolution photolithography. The experimental I – V characteristics of the ramp-type junctions showed non-hysteretic behaviour. Using these ramp-type junctions, the first series of dc SQUIDs have been successfully developed. The characteristics of the ramp-type junctions and the dc SQUIDs have been investigated both experimentally and by using numerical simulations. The white flux noise level of a dc SQUID based on ramp-type junctions with an area of 0.2 µm × 12 µm was measured to be .
Superconducting quantum interference device (SQUID) amplifier is best known for its low input impedance, low noise and low power consumption. Nowadays it is widely used for detecting the weak signals. Compared with other methods, the Nb/Al-AlOx/Nb structure Josephson junction based SQUID has the advantages of high transition temperature, high voltage flux modulation index and good heat recycle ability, wide critical voltage range, so it is a very good option for making SQUID amplifier. In this work, we fabricate the overdamped Josephson junction and washer dc SQUID, and test the I-V characteristics at He3 3 K stage temperature and calculate the current resolution of SQUID. The result of SQUID modulation property is good. The magnification becomes larger after increasing the input line number of loops, and the system noise becomes smaller after the join of the LC filter. This work is very important for designing and manufacturing transition edge sensor readout circuits.