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Conference on Lasers and Electro-Optics

Quantum coherence in semiconductor quantum dots

Hans Christian Schneider, Weng W. Chow

Published Jan 1, 2004• 0 citations
Publisher

Abstract

Quantum-coherence phenomena are studied for semiconductor quantum-dot structures under transient conditions. Inversionless gain, electromagnetically induced transparency, refractive index enhancement and group-velocity reduction are predicted. Substantial deviations from atomic systems exist because of many-body effects.
DOI
10.1364/iqec.2004.ithf2

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We investigate the impact of many-body interactions on group-velocity slowdown achieved via electromagnetically induced transparency in quantum dots using three different coupling-probe schemes (ladder, VVV, and $\ensuremath{\Lambda}$, respectively). We find that for all schemes many-body interactions have an important impact on the slow light properties. In the case of the $\ensuremath{\Lambda}$ and VVV schemes, the minimum required coupling power to achieve slow light is significantly reduced by many-body interactions. VVV type schemes are found to be generally preferable due to a favorable redistribution of carriers in energy space.
A theoretical investigation on slow light propagation based on electromagnetically induced transparency in a three-level quantum-dot system is performed including non-Markovian effects and correlated dephasing reservoirs. It is demonstrated that the non-Markovian nature of the process is quite essential even for conventional dephasing typical of quantum dots leading to significant enhancement or inhibition of the group velocity slow-down factor as well as to the shifting and distortion of the transmission window. Furthermore, the correlation between dephasing reservoirs may also either enhance or inhibit non-Markovian effects.
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