In this paper for the first time is reported on the possibility of practical application of interconfigurational f-d-excited state absorption (ESA) in rare-earth-ions—activated dielectric single crystals.
A method of suppression of losses due to excited-state absorption (ESA) in laser crystals is proposed, based on the well-known phenomenon of electromagnetically induced transparency. Typical situations in which ESA prevents lasing are considered. Theoretical analysis shows that by using an additional driving laser field one can inhibit ESA and make lasing possible. On the basis of available spectroscopic information estimates for rare-earth-ion-doped laser materials are presented. They show the feasibility of obtaining optical gain at parity-allowed $4{f}^{n}\ensuremath{\leftrightarrow}4{f}^{n\ensuremath{-}1}5d$ transitions of rare-earth ions in the ultraviolet spectral region after suppression of ESA at an emission wavelength into the conduction band of a host material.
tion of a single photon by a pair of rare-earth ions in a crystal, acting in cooperation. Neither ion by itself could possibly absorb the photon, since no single-ion state exists at the photon energies involved. Absorption of light occurs discretely at sums of energy-level separations in the two ions and is detected experimentally by the excitation spectrum of one of the emission lines. This is an extremely important new effect which will doubtless have important practical applications in the future as well as obvious scientific implications. It should be emphasized that this is not, in any significant degree, excitation of a molecular state. The basic reason this phenomenon is so unusual is related to the fact that the interaction of radiation with matter consists of a sum of one-electron operators, A Vi, where A is the vector potential. From this point of view, only one electron at a time could possibly be excited, hence only one ion. In this paper a procedure for computing the probability of this effect is outlined, and some of the implications of the associated phenomena are discussed. These views can be found expressed in greater detail in ref. 2.