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arXiv:2610.22614

Trapping of nanofabricated SiO$_2$ high-aspect-ratio discs in an optical lattice

Shelby Klomp, Shafaq Gulzar Elahi, Scott Grudichak, Chethn Galla, Zhiyuan Wang, Mark Nguyen, George Winstone, Katarina Boskovic Guy, Emma Derrick, Maddox Wroblewski, Jacob Sprague, Andrew Laeuger, Jackson Larsen, Nancy Aggarwal, Shane L. Larson, Andrew A. Geraci

physics.opticsastro-ph.IMgr-qcquant-phSubmitted Oct 15, 2026• Announced Oct 19, 2026
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Abstract

We describe the nanofabrication and loading of lithographically patterned, high aspect ratio $10$ $μ$m diameter silicon dioxide discs with thickness of $400$ nm into an optical standing wave trap in vacuum. We obtain motional spectra of the center of mass motion of the discs using a combination of interferometric and imaging methods. The method is capable of high-efficiency loading and optical trapping using small numbers of objects, of the order of a few particles, with customized geometries and sizes compatible with wafer scale nanofabrication methods. Disc-like particles in optical traps have been identified as promising candidates for detectors of high frequency gravitational waves or as sensitive accelerometers.

Comments
8 Pages, 4 figures; Comments are welcome

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Abstract. We report on the local probing and preparation of an ultracold Fermi gas on the length scale of one micrometer, i.e. of the order of the Fermi wavelength. The essential tool of our experimental setup is a pair of identical, high-resolution microscope objectives. One of the microscope objectives allows local imaging of the trapped Fermi gas of 6Li atoms with a maximum resolution of 660 nm, while the other enables the generation of arbitrary optical dipole potentials on the same length scale. Employing a 2D acousto-optical deflector, we demonstrate the formation of several trapping geometries including a tightly focussed single optical dipole trap, a 4x4-site two-dimensional optical lattice and a 8-site ring lattice configuration. Furthermore, we show the ability to load and detect a small number of atoms in these trapping potentials. A site separation of down to one micrometer in combination with the low mass of 6Li results in tunneling rates which are sufficiently large for the implementation of Hubbard-models with the designed geometries. ∗ These authors contributed equally to the presented work. † Author to whom any correspondence should be addressed. ar
A design is proposed for a novel ion trap quantum processor chip, microfabricated using a process based on planar silica-on-silicon techniques. The trap electrodes are of gold-coated silica and are spaced by highly doped silicon in a monolithic structure. This design allows a unit aspect-ratio trap with an ion-electrode separation below 100 μm, when using current fabrication techniques. The trapping potential is modelled and the operating parameters required to achieve motional frequencies of a few MHz are calculated. RF loss and the resultant heating of the trap chip are not found to be a factor limiting the trap's operation. This monolithic unit aspect-ratio trap is therefore expected to exhibit a deep potential well, high trap efficiency, and a low RF loss, when compared to other microfabricated traps. This technological approach is in principle scaleable to complex devices, and may form the basis for large-scale ion trap quantum processors.
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