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arXiv:2608.27281

Efficient formation and identification of single emitters in 4H-SiC following maskless heavy ion implantation

S. Eserin, L. K. S. Zimmermann, E. Schneider, M. Ludlow, J. Heiler, O. G. Lloyd-Willard, K. Stockbridge, G. Aresta, L. Antwis, S. K. Clowes, M. Hofmann, S. Kucera, P. Berwian, F. Kaiser, B. N. Murdin

quant-phSubmitted Aug 27, 2026• Announced Aug 28, 2026• 0 citations

Abstract

Single photon emitters in silicon carbide (SiC) are a leading platform for scalable quantum technologies. Recent interest has focused on oxygen-vacancy-related emitters, which show exceptionally high optical brightness and strong spin readout contrast. One barrier to scalable quantum devices based on these emitters is the challenge of maskless formation and rapid identification. Here, we demonstrate the formation of isolated bright single emitters in 4H-SiC, using low-energy maskless implantation of heavy ions bismuth and tin. Following annealing, up to 18% of implanted sites host a single emitter, with optimal yields achieved at annealing temperatures of 900-1000 degrees C. Occupancy statistics are modelled to estimate the implantation dose that maximises single-emitter yield. We introduce a tiered characterisation scheme, where a simple intensity threshold isolates single-emitter candidates, confirmed through photon correlation measurements, after which correlations between polarisation, saturation count rate and magnetic resonance frequency assign emitter type. It is shown that time-consuming low-temperature spectroscopy is not necessary to distinguish emitter types. Together, maskless heavy-ion implantation and selective screening offer an efficient route to forming and rapidly identifying near-surface single emitters for room-temperature quantum technologies such as quantum sensing.

Comments: 16 pages, 5 figures, includes Supplementary Information

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Modified divacancies in the 4H polytype of silicon carbide (SiC) exhibit enhanced charge stability and spin addressability at room temperature, making them attractive for quantum applications. However, their low formation yield and lack of direct structural identification have hindered progress. Here, we demonstrate a controllable method for high-yield engineering and identification of oxygen-related modified divacancy color centers in 4H-SiC via oxygen-ion implantation. Based on their distinct optical and spin-resonance characteristics, we experimentally resolve four types of modified divacancies. Furthermore, by measuring isotope-resolved 17O hyperfine interactions, we identify them as the four crystallographic configurations of oxygen-vacancy (OV) complexes. Remarkably, single OV centers account for over 90% of the total defect population and exhibit superior optical properties and spin coherence compared with defects created by conventional carbon or nitrogen implantation. We characterize the zero-phonon lines of these OV centers and reveal distinct temperature-dependent behavior in spin-readout contrast. By optimizing implantation dose and annealing temperature, we achieve high-density ensembles and observe Rabi-oscillation beating patterns associated with different orientations of basal-type defects. These results establish a high-yield route for scalable engineering of these four oxygen-related modified divacancies in 4H-SiC and clarify their atomic structure, opening new opportunities for solid-state quantum technologies.

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Spin-carrying single-photon emitters operating in the telecommunication C-band (1530-1565nm) are prime candidates for integrated spin-photon interfaces, offering seamless compatibility with existing fiber-optic infrastructure, an essential component for future quantum networks. In this context, erbium-dopants (

\text{Er}^{3+}

) are particularly compelling due to their exceptional emitter properties, including small spectral diffusion and long spin coherence times. However, their low C-band photon-emission rate and operation at cryogenic temperatures has limited the realization of this technology. In this work, we demonstrate fully integrated single-photon emission from an ion implanted

\text{Er}^{3+}

-embedded into a 4H-silicon-carbide-on-insulator (4H-SiCOI) microring resonator operating at room temperature. By optimizing the mode overlap between the resonator and the

\text{Er}^{3+}

-defect, we achieved a $\sim

70

\times$ Purcell enhancement and recorded small spectral diffusion of $\sim$54 MHz. We further characterize the

\text{Er}^{3+}

single photon emission via photon correlation g

^{(2)}

-histograms and investigate its performance under varying magnetic-field, demonstrating Zeeman splitting on single emitters.

On-chip single photon detection is crucial for implementing on-chip quantum communication, quantum simulation, and calculation. Superconducting nanowire single-photon detectors (SNSPDs) have become one of the essential techniques to achieve high-efficiency, on-chip, single-photon detection at scale due to their high detection efficiency, low dark count rate, and low jitter. Silicon carbide (SiC) has emerged as a promising integrated photonics platform due to its nonlinear optical processing capabilities, compatibility with CMOS technology, and outstanding quantum properties as a device for single photon sources. However, achieving high-efficiency superconducting nanowire single-photon detection on SiC substrates has yet to be demonstrated. In this study, we deposited polycrystalline NbN thin films onto 4H-SiC substrates. We also ensured that the deposited NbN thin film had a flat surface with a roughness less than 1 nm on the C-side 4H-SiC substrate through optimized chemical mechanical polishing. The NbN-SNSPD achieved a saturated quantum efficiency covering the color center emission bandwidth wavelength range (from 861 to 1550 nm) of the 4H-SiC material. These results offer a promising solution for high-efficiency single-photon detection on fully integrated quantum optical chips on 4H-SiC substrates.

The identification of a microscopic configuration of point defects acting as quantum bits is a key step in the advance of quantum information processing and sensing. Among the numerous candidates, silicon-vacancy related centers in silicon carbide (SiC) have shown remarkable properties owing to their particular spin-3/2 ground and excited states. Although, these centers were observed decades ago, two competing models, the isolated negatively charged silicon vacancy and the complex of negatively charged silicon vacancy and neutral carbon vacancy [Phys. Rev. Lett. 115, 247602 (2015)], are still argued as an origin. By means of high-precision first-principles calculations and high-resolution electron spin resonance measurements, we here unambiguously identify the Si-vacancy related qubits in hexagonal SiC as isolated negatively charged silicon vacancies. Moreover, we identify the Si-vacancy qubit configurations that provide room-temperature optical readout.