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arXiv:2605.05815

Room temperature Purcell enhanced single erbium ions in silicon-carbide-on-insulator microring resonators

Joshua Bader, Shin-ichiro Sato, Jeffrey C. McCallum, Ruixuan Wang, Shao Qi Lim, Alexey Lyasota, David Broadway, Brett C. Johnson, Sven Rogge, Qing Li, Stefania Castelletto

physics.opticsquant-phSubmitted May 7, 2026• Announced May 8, 2026• 0 citations
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Abstract

Spin-carrying single-photon emitters operating in the telecommunication C-band (1530-1565nm) are prime candidates for integrated spin-photon interfaces, offering seamless compatibility with existing fiber-optic infrastructure, an essential component for future quantum networks. In this context, erbium-dopants ($\text{Er}^{3+}$) are particularly compelling due to their exceptional emitter properties, including small spectral diffusion and long spin coherence times. However, their low C-band photon-emission rate and operation at cryogenic temperatures has limited the realization of this technology. In this work, we demonstrate fully integrated single-photon emission from an ion implanted $\text{Er}^{3+}$-embedded into a 4H-silicon-carbide-on-insulator (4H-SiCOI) microring resonator operating at room temperature. By optimizing the mode overlap between the resonator and the $\text{Er}^{3+}$-defect, we achieved a $\sim$70$\times$ Purcell enhancement and recorded small spectral diffusion of $\sim$54 MHz. We further characterize the $\text{Er}^{3+}$ single photon emission via photon correlation g$^{(2)}$-histograms and investigate its performance under varying magnetic-field, demonstrating Zeeman splitting on single emitters.

Comments
10 pages, 4 figures

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Spin-carrying single-photon emitters operating in the telecommunication C-band (1530-1565nm) are prime candidates for integrated spin-photon interfaces, offering seamless compatibility with existing fiber-optic infrastructure, an essential component for future quantum networks. In this context, erbium-dopants (Er3+\text{Er}^{3+}Er3+) are particularly compelling due to their exceptional emitter properties, including small spectral diffusion and long spin coherence times. However, their low C-band photon-emission rate and operation at cryogenic temperatures has limited the realization of this technology.
In this work, we demonstrate fully integrated single-photon emission from an ion implanted Er3+\text{Er}^{3+}Er3+-embedded into a 4H-silicon-carbide-on-insulator (4H-SiCOI) microring resonator operating at room temperature. By optimizing the mode overlap between the resonator and the Er3+\text{Er}^{3+}Er3+-defect, we achieved a ∼\sim∼70×\times× Purcell enhancement and recorded small spectral diffusion of ∼\sim∼54 MHz. We further characterize the Er3+\text{Er}^{3+}Er3+ single photon emission via photon correlation g(2)^{(2)}(2)-histograms and investigate its performance under varying magnetic-field, demonstrating Zeeman splitting on single emitters.
Individual spins that are coupled to telecommunication photons offer unique promise for distributed quantum information processing once a coherent and efficient spin–photon interface can be fabricated at scale. We implement such an interface by integrating erbium dopants into a nanophotonic silicon resonator. We achieve spin-resolved excitation of individual emitters with <0.1GHz spectral diffusion linewidth. Upon resonant driving, we observe optical Rabi oscillations and single-photon emission with a 78-fold Purcell enhancement. Our results establish a promising platform for quantum networks.
Vanadium color centers in silicon carbide (SiC) offer telecom O-band emission, sub-microsecond optical lifetimes, and second-scale spin relaxation times, rendering them promising candidates for quantum network nodes. However, efficient photon extraction from the high-refractive-index SiC host remains challenging. Here, we introduce a silicon-on-SiC heterogeneous photonic platform in which silicon nanocavities evanescently couple to shallow vanadium dopants in commercial 4H-SiC, enabling efficient zero-phonon line (ZPL) collection under resonant excitation. In as-grown ensembles, we observe Purcell-enhanced photoluminescence with transient spectral hole burning linewidths of 50 MHz on microsecond timescales. In dilute implanted samples, we isolate individual vanadium centers with high-purity single photon emission and a Purcell-enhanced lifetime of 109 ns. The entire optical interface operates through a single lensed fiber, including a 905 nm repump laser that recovers the vanadium charge state with 95% efficiency. These results establish Si-on-SiC as a scalable, foundry-compatible platform for telecom-wavelength spin-photon interfaces.
Single quantum emitters coupled to optical cavities in the Purcell regime can be used as high-efficiency spin-photon interfaces that are essential for building a quantum network. Furthermore, the dynamical control of the spontaneous emission rate of quantum emitters can have important implications in quantum technologies, e.g. for shaping the emitted photons waveform, or for driving coherently the optical transition while preventing photon emission. Here we demonstrate the dynamical Purcell-enhanced emission of a mesoscopic ensemble of erbium ions doped into nanocrystals coupled to a fully-tunable high-finesse fiber-based optical microcavity. Erbium has excellent optical and spin coherence properties at cryogenic temperatures and, in addition, has a transition in the telecom band that can facilitate integration into existing commercial telecom fibers. We show that we can tune the cavity on and out of resonance at a rate of above 8 KHz, which is two orders of magnitude faster that the natural lifetime of the erbium ions (55 Hz), and a factor of five faster than the Purcell enhanced emission (1.8 KHz). This allows us to shape in real time the Purcell enhanced emission of the ions and to achieve full control over the emitted photon’s waveforms. With moderate improvements in our detection efficiency and cavity finesse, this capability will allow for the generation of single telecom photons with controllable wave-shape from single erbium ions and for the realization of quantum processing between rare-earth ion qubits using dipolar interactions.
Rare-earth ion defects in solid-state hosts have emerged as a promising candidate for emissive quantum memories owing to their inherent spin–photon interface and long optical and spin coherence times. Erbium (Er3+) in particular has optical transitions in the C-band making it well suited to the use of existing telecom technology infrastructure. In this work, we present a platform to integrate rare-earth ions into standard silicon photonic circuits. Erbium is co-deposited in CMOS-compatible TiO2 host films onto SOI and patterned into high Purcell factor photonic crystal cavities. Purcell factors in excess of 500 are observed and transient spectral hole burning and photoluminescence excitation scans reveal homogeneous linewidths below 15 MHz. Additionally, we show that photonic wirebonding can provide a solution for low-loss and thermally stable fiber-to-chip coupling.
Silicon vacancy centers in 4H-silicon carbide (SiC) host a long-lived electronic spin with spin-resolved optical transitions. This makes them a great candidate for implementing a spin–photon interface, an important building block of quantum networks. However, the fraction of coherently scattered photons is intrinsically low, limiting the achievable communication rates. To address this problem, we integrate V2 centers within a SiC membrane into a fiber-based Fabry–Perot microcavity. We find that SiC is uniquely suited for this approach, offering extremely low losses as we evidence by a high cavity finesse F ≈40000 and naturally available maximal cavity–emitter coupling due to the perfect alignment of polarization modes and the dipole orientation. We observe a 13.3-fold Purcell enhancement of the zero phonon line of a single emitter, constituting an efficient source of coherent photons for this novel material platform, and opening the path toward a deterministic spin–photon interface.
We report the broadband luminescence enhancement of erbium ions embedded in a non-resonant hybrid waveguide photon-emitter interface on silicon. The measured emission rate enhancement of > 300 is enabled by a large radiative Purcell factor across the spectrum in the telecommunications C-band. This enables the shortening of the lifetime of erbium from 3 ms to 8 μs, effectively providing brighter on-chip photon sources. The platform efficiently collects the photon emission of erbium in a single-mode waveguide and out-couples it to a low-loss photonic waveguide using a reverse nano-focusing method. This hybrid approach opens a large range of possible emitter-waveguide platform combinations for heterogeneous and hybrid quantum emitter integration, towards scalable on-chip quantum networks.