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arXiv:2607.13448

Deterministic single-electron trapping on solid neon using engineered dielectric surface geometry

Kundan Surse, Eric Helgemo, Andrew Palmer, Md Serajum Monir, Lukas Delventhal, Thanh Nguyen, Maja Cassidy, Rajib Rahman

quant-phcond-mat.mes-hallSubmitted Jul 15, 2026• Announced Jul 16, 2026• 0 citations
v1 · Jul 15, 2026v2 · Jul 22, 2026
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Abstract

Levitating electron qubit on the surface of solid neon has recently emerged as a promising and intrinsically noise-resilient platform for quantum information processing. Their ultra-clean, inert environment suppresses conventional decoherence pathways associated with lattice disorder, charge traps, and nuclear-spin baths that limit coherence in semiconductor qubits. Yet, uncontrolled surface features such as bumps, valleys, and electrode-defined gaps can bind electrons unintentionally, contributing charge noise and inducing spin-orbit coupling mediated decoherence. To address this challenge, we propose an engineered interface in which a dielectric layer is deposited beneath the solid neon to provide an atomically smooth template, eliminating surface-roughness induced trapping. By selectively etching this dielectric layer at desired qubit locations, deterministic potential minima can be engineered to reliably capture electrons while suppressing unwanted surface bound states. We perform large-scale Schrodinger and Poisson simulation to compare the existing and proposed strategies of electron trapping on neon, obtaining good agreement with recent experimental measurements.

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Levitating electron qubit on the surface of solid neon has recently emerged as a promising and intrinsically noise-resilient platform for quantum information processing. Their ultra-clean, inert environment suppresses conventional decoherence pathways associated with lattice disorder, charge traps, and nuclear-spin baths that limit coherence in semiconductor qubits. Yet, uncontrolled surface features such as bumps, valleys, and electrode-defined gaps can bind electrons unintentionally, contributing charge noise and inducing spin-orbit coupling mediated decoherence. To address this challenge, we propose an engineered interface in which a dielectric layer is deposited beneath the solid neon to provide an atomically smooth template, eliminating surface-roughness induced trapping. By selectively etching this dielectric layer at desired qubit locations, deterministic potential minima can be engineered to reliably capture electrons while suppressing unwanted surface bound states. We perform large-scale Schrodinger and Poisson simulation to compare the existing and proposed strategies of electron trapping on neon, obtaining good agreement with recent experimental measurements.
Single electrons trapped on solid-neon surfaces have recently emerged as a promising platform for charge qubits. Experimental results have revealed their exceptionally long coherence times, yet the actual quantum states of these trapped electrons, presumably on imperfectly flat neon surfaces, remain elusive. In this Letter, we examine the electron's interactions with neon surface topography, such as bumps and valleys. By evaluating the surface charges induced by the electron, we demonstrate its strong perpendicular binding to the neon surface. The Schrödinger equation for the electron's lateral motion on the curved 2D surface is then solved for extensive topographical variations. Our results reveal that surface bumps can naturally bind an electron, forming unique quantum ring states that align with experimental observations. We also show that the electron's excitation energy can be tuned using a modest magnetic field to facilitate qubit operation. This study offers a leap in our understanding of electron-on-solid-neon qubit properties and provides strategic insights on minimizing charge noise and scaling the system to propel forward quantum computing architectures.
Electrons floating in vacuum provide a clean platform for quantum information processing owing to their isolation from material defects. In particular, electrons on solid neon have emerged as a promising qubit platform because of their potentially long coherence times. Here, toward spin-qubit realization, we couple a single electron on solid neon to a magnetic-field-compatible superconducting NbTiN nanowire resonator. We realize a charge qubit and demonstrate microwave readout and coherent control, with Rabi frequencies up to 76 MHz, an order of magnitude larger than in previous studies. Under strong driving, we observe a qubit frequency shift from nonlinear interactions with the intense microwave field. Deterministic electron trapping at an intended position remains challenging due to solid neon surface roughness; we characterize the electron's position from its differential coupling to distinct electrodes. Although not trapped at an intended position, our estimates indicate that spin-qubit demonstrations remain feasible.
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Abstract Cryogenic solid neon has recently emerged as a pristine solid host for single electron qubits. At ~10 mK temperatures, electron-on-solid-neon (eNe) charge qubits have exhibited exceptionally long coherence times and high operation fidelities. To advance this platform towards a scalable quantum information architecture, systematic characterization of its noise feature is imperative. Here, we show the remarkable resilience of solid neon against charge and thermal noises when eNe qubits are operated away from the charge-insensitive sweet-spot and at elevated temperatures. Without optimizing neon growth, the measured charge (voltage) noise on solid neon is already orders of magnitude lower than that in most stringently grown semiconductors, rivaling the best records to date. Up to 400 mK, the eNe charge qubits operated at ~5 GHz can maintain their echo coherence times over 1 microsecond. These observations highlight solid neon as an ideal host for quantum information processing at higher temperatures and larger scales.
The promise of quantum computing has driven a persistent quest for new qubit platforms with long coherence, fast operation, and large scalability. Electrons, ubiquitous elementary particles of nonzero charge, spin, and mass, have commonly been perceived as paradigmatic local quantum information carriers. Despite superior controllability and configurability, their practical performance as qubits via either motional or spin states depends critically on their material environment. Here we report our experimental realization of a new qubit platform based upon isolated single electrons trapped on an ultraclean solid neon surface in vacuum. By integrating an electron trap in a circuit quantum electrodynamics architecture, we achieve strong coupling between the motional states of a single electron and a single microwave photon in an on-chip superconducting resonator. Qubit gate operations and dispersive readout are implemented to measure the energy relaxation time T1T_1T1​ of 15μ\muμs and phase coherence time T2T_2T2​ over 200ns. These results indicate that the electron-on-solid-neon qubit already performs near the state of the art as a charge qubit.