Abstract Cryogenic solid neon has recently emerged as a pristine solid host for single electron qubits. At ~10 mK temperatures, electron-on-solid-neon (eNe) charge qubits have exhibited exceptionally long coherence times and high operation fidelities. To advance this platform towards a scalable quantum information architecture, systematic characterization of its noise feature is imperative. Here, we show the remarkable resilience of solid neon against charge and thermal noises when eNe qubits are operated away from the charge-insensitive sweet-spot and at elevated temperatures. Without optimizing neon growth, the measured charge (voltage) noise on solid neon is already orders of magnitude lower than that in most stringently grown semiconductors, rivaling the best records to date. Up to 400 mK, the eNe charge qubits operated at ~5 GHz can maintain their echo coherence times over 1 microsecond. These observations highlight solid neon as an ideal host for quantum information processing at higher temperatures and larger scales.
Abstract Cryogenic solid neon has recently emerged as a pristine solid host for single electron qubits. At ~10 mK temperatures, electron-on-solid-neon (eNe) charge qubits have exhibited exceptionally long coherence times and high operation fidelities. To advance this platform towards a scalable quantum information architecture, systematic characterization of its noise feature is imperative. Here, we show the remarkable resilience of solid neon against charge and thermal noises when eNe qubits are operated away from the charge-insensitive sweet-spot and at elevated temperatures. Without optimizing neon growth, the measured charge (voltage) noise on solid neon is already orders of magnitude lower than that in most stringently grown semiconductors, rivaling the best records to date. Up to 400 mK, the eNe charge qubits operated at ~5 GHz can maintain their echo coherence times over 1 microsecond. These observations highlight solid neon as an ideal host for quantum information processing at higher temperatures and larger scales.
Electrons trapped on solid neon surfaces serve as low-noise charge qubits with long coherence times and high operational fidelities. Such charge qubits offer full electrical control and compact device footprints, convenient for scaling up with quantum circuits. Realizing two-qubit gates on this platform is a critical step towards practical quantum information processing. In this work, we report the first experimental demonstration of coherent manipulation of multiple interacting electron-on-solid-neon (eNe) charge qubits. By exploiting the electrons naturally confined in close proximity by the surface structures of solid neon, we have achieved a direct qubit-qubit coupling strength of up to 62.5 MHz, as well as implemented cross-resonance (CR) and bSWAP two-qubit gates using global microwave drives. The natural electron confinement by solid neon mitigates the high-density-wiring challenge, simplifies the multi-qubit control, and establishes a unique path to scale up the eNe qubit platform.
Electron charge qubits are compelling candidates for solid-state quantum computing because of their inherent simplicity in qubit design, fabrication, control, and readout. However, all existing electron charge qubits, built upon conventional semiconductors and superconductors, suffer from severe charge noise that limits the coherence time to the order of 1 microsecond. Here, we report our experimental realization of ultralong-coherence electron charge qubits, based upon isolated single electrons trapped on an ultraclean solid neon surface in vacuum. Quantum information is encoded in the motional states of an electron that is strongly coupled with microwave photons in an on-chip superconducting resonator. The measured relaxation time T1 and coherence time T2 are both on the order of 0.1 milliseconds. The single-shot readout fidelity without using a quantum-limited amplifier is 98.1%. The average single-qubit gate fidelity using Clifford-based randomized benchmarking is 99.97%. Simultaneous strong coupling of two qubits with the same resonator is demonstrated, as a first step toward two-qubit entangling gates for universal quantum computing. These results manifest that the electron-on-solid-neon (eNe) charge qubits outperform all existing charge qubits to date and rival state-of-the-art superconducting transmon qubits, offering an appealing platform for quantum computing.
Abstract Electrons trapped on solid neon surfaces serve as low-noise charge qubits with long coherence times and high operational fidelities. Such charge qubits offer full electrical control and compact device footprints, convenient for scaling up with quantum circuits. Realizing two-qubit gates on this platform is a critical step towards practical quantum information processing. In this work, we report the first experimental demonstration of coherent manipulation of multiple interacting electron-on-solid-neon (eNe) charge qubits. By exploiting the electrons naturally confined in close proximity by the surface structures of solid neon, we have achieved a direct qubit-qubit coupling strength of up to 62.5 MHz, as well as implemented cross-resonance (CR) and bSWAP two-qubit gates using global microwave drives. The natural electron confinement by solid neon mitigates the high-density-wiring challenge, simplifies the multi-qubit control, and establishes a unique path to scale up the eNe qubit platform.
Electron-on-neon (eNe) qubits have recently emerged as a compelling platform for quantum computing, which combines the vacuum isolation advantages of trapped-ion qubits with the scalability of superconducting circuits. In this system, electrons are trapped in vacuum above a solid neon film deposited on superconducting microwave resonators, where they exhibit strong coupling to the resonators, coherence times of ~0.1 ms, and single-qubit gate fidelities exceeding 99.97%. A central challenge, however, is the spontaneous binding of electrons to neon surface bumps. These bumps, originating from substrate roughness, vary in size: electrons on bumps of suitable sizes within the resonator can couple to microwave photons and function as qubits, whereas those on unfavorable bumps remain inactive yet contribute to background charge noise. Moreover, both the bump landscape and the sites where electrons bind differ from run to run, leading to variable qubit characteristics that hinder scalability. To address this challenging issue, we present an on-chip magnetic-levitation architecture in which arrays of solid-neon microparticles are suspended above the processor chip to act as electron carriers. This design eliminates substrate effects while retaining strong qubit-resonator coupling and supporting inter-qubit connectivity. Our analysis further shows that the qubit transition frequency can be tuned across the gigahertz range and its anharmonicity can reach ~0.8 GHz by tuning the resonator bias voltage. Together, these features suggest a promising pathway toward robust, reproducible, and scalable eNe-based quantum computing.
Abstract Recent experiments show ∼0.1 ms coherence time for a single electron charge qubit on a solid neon surface. This remarkably long coherence time is believed to result from the intrinsic purity of solid neon as a qubit host. In this paper, we present theoretical studies on the decoherence mechanisms of an electron’s charge (lateral motional) states on solid neon. At the typical experimental temperature of ∼10 mK, the two main decoherence mechanisms are the phonon-induced displacement of neon surface and phonon-induced modulation of neon permittivity (dielectric constant). With a qubit frequency increasing from 1 GHz to 10 GHz, the charge coherence time decreases from about 366 s to 7 ms and from about 864 s to 24 ms, respectively, limited by the two mechanisms above. The calculated coherence times are at least one order longer than the observed ones at ∼6.4 GHz qubit frequency, suggesting plenty of room for experimental improvement.
Levitating electron qubit on the surface of solid neon has recently emerged as a promising and intrinsically noise-resilient platform for quantum information processing. Their ultra-clean, inert environment suppresses conventional decoherence pathways associated with lattice disorder, charge traps, and nuclear-spin baths that limit coherence in semiconductor qubits. Yet, uncontrolled surface features such as bumps, valleys, and electrode-defined gaps can bind electrons unintentionally, contributing charge noise and inducing spin-orbit coupling mediated decoherence. To address this challenge, we propose an engineered interface in which a dielectric layer is deposited beneath the solid neon to provide an atomically smooth template, eliminating surface-roughness induced trapping. By selectively etching this dielectric layer at desired qubit locations, deterministic potential minima can be engineered to reliably capture electrons while suppressing unwanted surface bound states. We perform large-scale Schrodinger and Poisson simulation to compare the existing and proposed strategies of electron trapping on neon, obtaining good agreement with recent experimental measurements.