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arXiv:2607.09652

Silicon-Germanium Heterostructures with Enhanced Valley Splitting for Spin Qubits

David W. Kanaar, Efrain Martinez, Peihong Zhang, Mark F. Gyure

cond-mat.mes-hallquant-phSubmitted Jul 10, 2026• Announced Jul 13, 2026
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Abstract

Achieving valley splittings well in excess of the thermal energy of electrons and avoiding valley excitations is essential for the consistent initialization, operation and readout of gate-defined Si spin qubits. In this work, we present a device-level optimization strategy for pushing valley splittings to between 1 and 5 meV, well beyond values reported in nearly all previous theoretical studies. Using device-scale simulations that incorporate atomistic alloy disorder through a 1D tight-binding theory, we demonstrate that our proposed approach yields large valley splittings with a tight distribution across disorder realizations, a key requirement for reproducible qubit performance at scale. The approach rests on an unorthodox Si/SiGe heterostructure design combining a narrow quantum well, a small Ge spike, and a pure-Ge cap. We corroborate these predictions with targeted atomistic density functional theory calculations. These results offer a clear path forward for scalable Si/SiGe spin qubit devices and, if realized experimentally, effectively eliminate valley splitting as an existential problem for large scale SiGe-based quantum processors.

Comments
9 pages, 10 figures

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Achieving valley splittings well in excess of the thermal energy of electrons and avoiding valley excitations is essential for the consistent initialization, operation and readout of gate-defined Si spin qubits. In this work, we present a device-level optimization strategy for pushing valley splittings to between 1 and 5 meV, well beyond values reported in nearly all previous theoretical studies. Using device-scale simulations that incorporate atomistic alloy disorder through a 1D tight-binding theory, we demonstrate that our proposed approach yields large valley splittings with a tight distribution across disorder realizations, a key requirement for reproducible qubit performance at scale. The approach rests on an unorthodox Si/SiGe heterostructure design combining a narrow quantum well, a small Ge spike, and a pure-Ge cap. We corroborate these predictions with targeted atomistic density functional theory calculations. These results offer a clear path forward for scalable Si/SiGe spin qubit devices and, if realized experimentally, effectively eliminate valley splitting as an existential problem for large scale SiGe-based quantum processors.
Small and device-dependent valley splittings remain a key challenge for electron spin qubits in silicon (Si), directly limiting qubit fidelity, device uniformity, and the scalability of Si-based quantum processors. In silicon-germanium (SiGe) heterostructures, this problem can be addressed through engineering of the epitaxial layer stack. Several heuristic strategies have been proposed to enhance the energy gap between the two nearly degenerate valley states in strained Si/SiGe quantum wells (QWs), e.g., sharp Si/SiGe interfaces, Ge spikes, or oscillating Ge concentrations within the QW. Here, we develop a systematic variational optimization approach to compute optimal Ge concentration profiles that enhance selected properties of the intervalley coupling matrix element. Our free-shape optimization framework is augmented by realistic technological constraints to ensure feasibility of the resulting epitaxial profiles and is based on an effective-mass envelope-function theory accounting for strain and compositional alloy disorder. Previously proposed heterostructure designs are recovered as special cases of the constrained optimization problem. Our main result is a novel heterostructure design, which we refer to as the "modulated wiggle well", providing both a large deterministic enhancement of the valley splitting and a strong suppression of disorder-induced variability. In addition, this design enables wide electrical tunability of the valley splitting - from approximately 200 μeV200\,μ\text{eV}200μeV to above 1 meV1\,\text{meV}1meV - offering new opportunities for engineering robust and switchable silicon qubits.
Single electron spins can be used to encode and process information in semiconductor quantum devices. Progress has been hindered by materials challenges, such as the small energy splitting between low-lying valley states and hyperfine coupling to nuclear spins. Here we use density functional theory to optimize the valley splitting and spin dephasing time in realistic Si/SiGe heterostructures. Reductions in the Si quantum well width generally increase the valley splitting. However, in narrow quantum wells, a larger fraction of the electronic wavefunction resides in the SiGe buffer layers, which increases the hyperfine coupling with spinful 73^{73}73Ge. Our work shows that Si/SiGe heterostructures with 3~--~4~nm wide quantum wells and 73^{73}73Ge and 29^{29}29Si concentrations of 50 ppm should support average valley splittings EvE_{v}Ev​~>>>~500~μμμeV and spin dephasing times T2∗T_2^*T2∗​ exceeding 15~μμμs assuming an effective quantum dot area of 700 nm2^22. In addition, sharper Si/SiGe interfaces in general result in larger valley splittings and longer spin dephasing times.
In Si(111) crystals, a strong biaxial tensile strain applied within the (111) plane is considered to shift the lowest energy point of the conduction band from the ΔΔΔ valley to the L valley. Electrons confined in this L valley experience a splitting of their quadruply degenerate energy levels into an undegenerate single-level ground state (L1) and a triply degenerate excited state (L3). The energy of the single-level ground state is sufficiently low relative to the energies of the L3 valley and the ΔΔΔ valley, making it optimal as a two-level system for a qubit. Using deformation potential theory and incorporating quantum effects from electron confinement in the SiGe/Si(111)/SiGe structure, we determine the value of the biaxial tensile strain causing the shift of the conduction band energy minimum from the ΔΔΔ valley to the L valley, along with the corresponding Ge concentration. We also calculate the critical thickness for the plastic relaxation of the Si quantum well under this large biaxial tensile strain and examine the feasibility of realizing it as a SiGe/Si(111)/SiGe heterostructure.
Controlling the energy scales of a quantum system is essential for defining robust qubits. In silicon spin qubits, the nearly degenerate conduction-band valleys create a leakage channel from the single-spin computational basis, posing a challenge to scaling and to shuttling-based architectures. Here, we measure the relevant energy scales of single-electron spin qubits in buried silicon quantum wells co-designed for low disorder and high valley splitting. Across a linear array of four quantum dots with an average orbital energy of 2.4(2) meV, we report an average single-electron valley splitting of 0.40(6) meV and an average two-electron singlet-triplet splitting of 0.24(7) meV. In three dots, we observe a strong correlation between valley splitting and orbital energy, with an average linear coefficient of ≈0.22\approx 0.22≈0.22 (meV/meV), demonstrating that electrostatic confinement can increase the valley splitting by several hundred microelectronvolts. In contrast, the remaining dot exhibits the highest valley splitting of 0.76(2) meV and low correlation, suggesting excellent characteristics for spin-qubit operation. Our findings demonstrate that strong confinement can be exploited in buried quantum wells to effectively enhance the valley splitting, thereby establishing a viable path toward the realization of shuttling and sparse-occupation-based architectures in low-disorder heterostructures.
Planar germanium heterostructures hosting hole-spin qubits are among the leading platforms for scalable semiconductor-based quantum computing. Yet, device performance is hindered by significant quantum dot variability, which leads to uncertainty in qubit energy levels and random orientations of the spin quantization axis. Tailored control of the g-tensor offers a strategy to overcome these limitations and achieve more reliable qubit operations. Here, we introduce a flexible optimization framework for engineering g-tensor properties. As a benchmark, we numerically obtain the optimal reshaping of the out-of-plane potential in a SiGe-Ge-SiGe quantum well to suppress the in-plane g-tensor components and realize the recently proposed gapless single-spin qubit encoding. This reshaping is achieved through heterostructure engineering, specifically by adjusting the silicon concentration within the quantum well, though the framework remains readily adaptable to alternative design objectives. Our results provide practical design principles for improving the tunability of the spin response, paving the way towards large-scale germanium-based quantum computers.
Valley splitting in strained Si/SiGe quantum wells is a central parameter for silicon spin qubits and is commonly described with envelope-function and effective-mass theories. These models provide a computationally efficient continuum description and have been shown to agree well with atomistic approaches when the confinement potential is slowly varying on the lattice scale. In modern Si/SiGe heterostructures with atomically sharp interfaces and engineered Ge concentration profiles, however, the slowly varying potential approximation underlying conventional (local) envelope-function theory is challenged. We formulate an exact multi-valley envelope-function model by combining Burt-Foreman-type envelope-function theory, which does not rely on the assumption of a slowly varying potential, with a valley-sector decomposition of the Brillouin zone. This construction enforces band-limited envelopes, which satisfy a set of coupled integro-differential equations with a non-local potential energy operator. Using degenerate perturbation theory, we derive the intervalley coupling matrix element within this non-local model and prove that it is strictly invariant under global shifts of the confinement potential (choice of reference energy). We then show that the conventional local envelope model generically violates this invariance due to spectral leakage between valley sectors, leading to an unphysical energy-reference dependence of the intervalley coupling. The resulting ambiguity is quantified by numerical simulations of various engineered Si/SiGe heterostructures. Finally, we propose a simple spectrally filtered local approximation that restores the energy-reference invariance exactly and provides a good approximation to the exact non-local theory.