Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Log inSign up
Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Blog
Job Board
Q3AS

© 2026 Aqora Quantum S.A.S.

TermsPrivacyLegal Notice

arXiv:2607.09244

Screening-controlled dynamical criticality in the quantum Hall regime

Tanima Chanda, Simrandeep Kaur, Anantbir Virk, Kenji Watanabe, Takashi Taniguchi, G. J. Sreejith, Yuval Gefen, Aveek Bid

Published Jul 10, 2026• 0 citations
arXivHTMLPDF

Abstract

At continuous electronic phase transitions, Coulomb interactions can modify the relation between length, energy, and temperature, but experimentally disentangling their effects on spatial versus dynamical criticality has remained difficult, since finite-temperature scaling alone measures only the combined exponent $κ= 1/(zγ)$. Here, we introduce two advances that resolve this limitation. First, by combining temperature scaling with independent current scaling, we separately extract the dynamical exponent $z$ and the localization-length exponent $γ$ at the quantum Hall plateau transition -- rather than inferring one from an assumed value of the other. Second, using dual-graphite-gated graphene devices in which the effective Coulomb interaction range is tuned geometrically by the ratio of the magnetic length $l_B$ to the graphite-gate distance $d$, we track this separation across both screened and unscreened interaction regimes within the same device platform. Temperature scaling gives $κ\simeq 0.21$ in the screened regime and $κ\simeq 0.41$ in the unscreened regime; combining this with current scaling reveals that screening changes $z$ from $\simeq 1$ in the unscreened regime to $\simeq 2$ in the screened regime. In contrast, $γ$ remains close to $2.4$ throughout. Our results establish that gate-controlled screening selectively modifies the interaction-dependent dynamical sector of the quantum Hall transition, leaving the localization-length exponent $γ$ unchanged within experimental uncertainty. More broadly, this work establishes geometric screening as a versatile tool for controlling interactions and disentangling interaction and disorder effects in correlated two-dimensional systems, including fractional quantum Hall states, moiré materials, and other strongly localized electronic phases.

DOI
10.48550/arxiv.2607.09244

Related papers

Quantum Hall Effect at 0.002T

Alexander S. Mayorov, Ping Wang, Xiaokai Yue +16 more

Graphene enables precise carrier-density control via gating, making it an ideal platform for studying electronic interactions. However, sample inhomogeneities often limit access to the low-density regimes where these interactions dominate. Enhancing carrier mobility is therefore crucial for exploring fundamental properties and developing device applications. Here, we demonstrate a significant reduction in external inhomogeneity using a double-layer graphene architecture separated by an ultra-thin hexagonal boron nitride layer. Mutual screening between the layers reduces scattering from random Coulomb potentials, resulting in a quantum mobility exceeding. Shubnikov de-Haas oscillations emerge at magnetic fields below 1 mT, while integer quantum Hall features are observed at 0.002T. Furthermore, we identify a fractional quantum Hall plateau at a filling factor of at 2T. These results demonstrate the platform's suitability for investigating strongly correlated electronic phases in graphene-based heterostructures.

cond-mat.mes-hallCross-listedarXiv:2601.16015•Jan 23, 2026

Quantum geometric localization length and localization criticality in an ideally flat Chern band

Xu-Cheng Wang, Yang Qi

We propose that the localization length in an isolated, ideally flat Chern band is set by quantum geometry. We explore the corresponding localization transition and its critical scaling by applying transfer matrix calculations in the maximally localized hybrid Wannier basis, whose spatial spread is exactly characterized by a quantum geometric length. Remarkably, upon tuning the quantum metric of the Chern band, we observe a crossover from a universal regime controlled by the Dirac fixed point to a non-universal regime with continuously varying critical exponents. Within the universal regime, the localization length exhibits a pronounced linear dependence on the quantum geometric length, supporting its quantum geometric nature. These findings provide a novel quantum geometric perspective on the localization in quantum Hall systems such as twisted moiré superlattices, and shed new light on the long-standing controversy over the criticality of the integer quantum Hall transition.

arXiv:2608.08042•Aug 8, 2026•0 citations

Short-range interactions and scaling near integer quantum Hall transitions

Ziqiang Wang, Matthew P. A. Fisher, S. M. Girvin +1 more

We study the influence of short-range electron-electron interactions on scaling behavior near the integer quantum Hall plateau transitions. Short-range interactions are known to be irrelevant at the renormalization group fixed point which represents the transition in the noninteracting system. We find, nevertheless, that transport properties change discontinuously when interactions are introduced. Most importantly, in the thermodynamic limit the conductivity at finite temperature is zero without interactions, but nonzero in the presence of arbitrarily weak interactions. In addition, scaling as a function of frequency $\ensuremath{\omega}$ and temperature T is determined by the scaling variable $\ensuremath{\omega}{/T}^{p}$ (where p is the exponent for the temperature dependence of the inelastic scattering rate) and not by $\ensuremath{\omega}/T,$ as it would be at a conventional quantum phase transition described by an interacting fixed point. We express the inelastic exponent p and the thermal exponent ${z}_{T}$ in terms of the scaling dimension $\ensuremath{-}\ensuremath{\alpha}<0$ of the interaction strength and the dynamical exponent z (which has the value $z=2),$ obtaining $p=1+2\ensuremath{\alpha}/z$ and ${z}_{T}=2/p.$

arXiv:cond-mat/9906454•Physical review. B, Condensed matter•Mar 15, 2000•51 citations

Gross-Neveu-XY quantum criticality in moiré Dirac materials

Bilal Hawashin, Michael M. Scherer, Lukas Janssen

Two-dimensional van der Waals materials offer a highly tunable platform for engineering electronic band structures and interactions. By employing techniques such as twisting, gating, or applying pressure, these systems enable precise control over the electronic excitation spectrum. In moir\'e bilayer graphene, the tunability facilitates the transition from a symmetric Dirac semimetal phase through a quantum critical point into an interaction-induced long-range ordered phase with a finite band gap. At charge neutrality, the ordered state proposed to emerge from twist-angle tuning is the Kramers intervalley-coherent insulator. In this case, the transition falls into the quantum universality class of the relativistic Gross-Neveu-XY model in $2+1$ dimensions. Here, we refine estimates for the critical exponents characterizing this universality class using an expansion around the lower critical space-time dimension of two. We compute the order-parameter anomalous dimension ${\ensuremath{\eta}}_{\ensuremath{\varphi}}$ and the correlation-length exponent $\ensuremath{\nu}$ at one-loop order, and the fermion anomalous dimension ${\ensuremath{\eta}}_{\ensuremath{\psi}}$ at two-loop order. Combining these results with previous findings from the expansion around the upper critical dimension, we obtain improved estimates for the universal exponents in $2+1$ dimensions via Pad\'e interpolation. For ${N}_{\text{f}}=4$ four-component Dirac fermions, relevant to moir\'e bilayer graphene, we estimate $1/\ensuremath{\nu}=0.916(5), {\ensuremath{\eta}}_{\ensuremath{\varphi}}=0.926(13)$, and ${\ensuremath{\eta}}_{\ensuremath{\psi}}=0.0404(13)$. For ${N}_{\text{f}}=2$, potentially relevant to recent tetralayer ${\mathrm{WSe}}_{2}$ experiments, the Gross-Neveu-XY fixed point may be unstable owing to a fixed-point collision at ${N}_{\text{f,c}}$, with ${N}_{\text{f,c}}=1+\sqrt{2}+\mathcal{O}(\ensuremath{\epsilon})$ in the expansion around the lower critical dimension.

arXiv:2503.19963•Physical review. B./Physical review. B•May 21, 2025•7 citations

First principles quantum Monte Carlo study of correlated electronic systems

Huihuo Zheng

The many-body correlation between electrons is the origin of many fascinating phenomena in condensed matter systems, such as high temperature superconductivity, superfluidity, fractional quantum Hall effect, and Mott insulator. Strongly correlated systems have been an important subject of condensed matter physics for several decades, especially after the discovery of high temperature cuprate superconductors. In this thesis, we apply first principles quantum Monte Carlo (QMC) method to several representative systems to study the electron correlations in transition metal oxides (vanadium dioxide) and low dimensional electronic systems (graphene and graphene-like two dimensional systems). Vanadium dioxide (VO2) is a paradigmatic example of a strongly correlated system that undergoes a metal-insulator transition at a structural phase transition. To date, this transition has necessitated significant post-hoc adjustments to theory in order to be described properly. We apply first principles quantum Monte Carlo (QMC) to study the structural dependence of the properties of VO2. Using this technique, we simulate the interactions between electrons explicitly, which allows for the metal-insulator transition to naturally emerge, importantly without ad-hoc adjustments. The QMC calculations show that the structural transition directly causes the metal-insulator transition and a change in the coupling of vanadium spins. This change in the spin coupling results in a prediction of a momentum-independent magnetic excitation in the insulating state. While two-body correlations are important to set the stage for this transition, they do not change significantly when VO2 becomes an insulator. These results show that it is now possible to account for electron correlations in a quantitatively accurate way that is also specific to materials. Electron correlation in graphene is unique because of the interplay of the Dirac cone dispersion of pi electrons with long range Coulomb interaction. The random phase approximation predicts no metallic screening at long distances and low energies because of the zero density of states at Fermi level. It is thus interesting to see how screening takes place in graphene at different length scales. We addressed this problem by computing the structure factor S(q) and S(q, ω) of freestanding graphene using ab initio fixed-node diffusion Monte Carlo and the random phase approximation. The X-ray measured structure factor is reproduced very accurately using both techniques, provided that sigma-bonding electrons are included in the simulations. Strong dielectric screening from sigma electrons are observed, which redshifts the pi plasmons resonance frequency at long distance and reduces the effective interactions between pi electrons at short distance. The short distance screening makes suspended graphene a weakly correlated semimetal which otherwise would be an insulator. The third piece of works is dedicated to studying the low energy excitation of many-body systems using extended Koopmans' theorem (EKT). The EKT provides a straight forward way to compute charge excitation spectra, such as ionization potentials, electron affinities from any level of theory. We implemented the EKT within the QMC framework, and performed systematic benchmark studies of ionization potentials of the second- and third-row atoms, and closed- and open-shell molecules. We also applied it to compute the quasiparticle band structure of solids (graphene). For complex correlated systems, identifying relevant low energy physics degrees of freedom is extremely important to understanding the system's collective behavior at different length scales. In this sense, bridging the realistic systems to lower energy effective lattice models that involve fewer but important degrees of freedom is significant to understanding correlated systems. We have formulated three ab initio density matrix based downfolding (AIDMD) methods to downfold the ab initio systems into effective lattice models. We have demonstrated the successfulness of these methods by applying them to molecules (H2) and periodic systems (hydrogen chain and graphene).

•Jul 12, 2016•1 citation

Field Theories of Interacting and Disordered Dirac Fermions in Graphene

Christian Fräßdorf

After its first isolation by Geim and Novoselov in 2004, graphene has grown quickly into an independent subfield of contemporary condensed matter physics, counting thousands of publications. This material has attracted so much attention not only because it is truly two-dimensional -- a feature long thought to be impossible to be realized in nature -- but also because it is the prime representative of a new class of condensed matter systems, the Dirac materials, whose electronic spectrum disperses linearly around isolated points in the Brillouin zone. An outstanding consequence of this linear energy-momentum dispersion is the collapse of the Fermi surface to isolated points at charge neutrality, accompanied by a vanishing single-particle density of states. While this feature of the noninteracting model is what separates graphene from most other, more conventional condensed matter systems, giving rise to many of its astounding physical properties, it leads to severe computational complications when extending the model to contain two-body interactions and/or disorder. In this thesis we consider both extensions separately. After rigorously deriving the low-energy quantum field theory from a tight-binding model and establishing the one-particle irreducible (1PI) vertex functions as the fundamental building blocks of correlation functions, we construct a nonperturbative formalism for the calculation of these vertex functions using the well-established functional renormalization group (fRG). By combining the fRG with the Keldysh formalism, accounting for possible external electromagnetic fields and nontrivial initial correlations, this framework is capable of handling thermal equilibrium and true nonequilibrium alike. To circumvent some of the technical problems of the standard fRG formalism when treating fermionic systems at finite density, we also explore a variant of the fRG, where the chemical potential is interpreted as a flow parameter. We obtain hierarchical sets of flow equations, which describe the change of the 1PI vertex functions upon varying an artificial cutoff scale or the chemical potential, respectively. These nonperturbative formalisms have been used to calculate the renormalization of the Fermi velocity and the static dielectric function at finite temperature and density in the strong coupling regime as an explicit demonstration of their capabilities. Since the Keldysh fRG is an exact formulation of quantum field theory, in particular when external magnetic fields are present, it should be possible to describe the fractional quantum Hall effect in this framework. However, the typical truncation schemes that are currently available to approximately solve the fRG flow equation fail to account for the nontrivial correlation effects necessary to access the fractional quantum Hall regime. To circumvent this problem we consider a modified field theory, where these correlations are implemented ``by hand'' via a Chern-Simons gauge field, coupling to the fermions in addition to the Coulomb interaction term. This modified field theory is analyzed in a stationary phase approximation including Gaussian fluctuations. The electromagnetic response tensor is calculated in the random phase approximation, yielding the Hall conductivities. In the second part of this thesis we consider disordered Dirac fermions in the absence of two-particle interactions. After sketching how the most general disorder potential for Dirac fermions arises from a tight-binding model, we first consider an explicit physical scenario, a disordered graphene pn junction in the presence of a quantizing magnetic field perpendicular to the graphene sheet. We derive an effective one-dimensional theory for the chiral states that propagate along the junction interface and calculate the full conductance distribution in the crossover between the clean and the strong-disorder limit, via an exact solution of a Fokker-Planck equation. Lastly, we develop a nonperturbative approach to calculate the disorder induced self-energy that is based on exact Schwinger-Dyson equations and Ward identities, not only for graphene, but also for other paradigmatic semimetals with a nodal point dispersion.

•Jan 1, 2019•0 citations
At continuous electronic phase transitions, Coulomb interactions can modify the relation between length, energy, and temperature, but experimentally disentangling their effects on spatial versus dynamical criticality has remained difficult, since finite-temperature scaling alone measures only the combined exponent κ=1/(zγ)κ= 1/(zγ)κ=1/(zγ). Here, we introduce two advances that resolve this limitation. First, by combining temperature scaling with independent current scaling, we separately extract the dynamical exponent zzz and the localization-length exponent γγγ at the quantum Hall plateau transition -- rather than inferring one from an assumed value of the other. Second, using dual-graphite-gated graphene devices in which the effective Coulomb interaction range is tuned geometrically by the ratio of the magnetic length lBl_BlB​ to the graphite-gate distance ddd, we track this separation across both screened and unscreened interaction regimes within the same device platform. Temperature scaling gives κ≃0.21κ\simeq 0.21κ≃0.21 in the screened regime and κ≃0.41κ\simeq 0.41κ≃0.41 in the unscreened regime; combining this with current scaling reveals that screening changes zzz from ≃1\simeq 1≃1 in the unscreened regime to ≃2\simeq 2≃2 in the screened regime. In contrast, γγγ remains close to 2.42.42.4 throughout. Our results establish that gate-controlled screening selectively modifies the interaction-dependent dynamical sector of the quantum Hall transition, leaving the localization-length exponent γγγ unchanged within experimental uncertainty. More broadly, this work establishes geometric screening as a versatile tool for controlling interactions and disentangling interaction and disorder effects in correlated two-dimensional systems, including fractional quantum Hall states, moiré materials, and other strongly localized electronic phases.
Graphene enables precise carrier-density control via gating, making it an ideal platform for studying electronic interactions. However, sample inhomogeneities often limit access to the low-density regimes where these interactions dominate. Enhancing carrier mobility is therefore crucial for exploring fundamental properties and developing device applications. Here, we demonstrate a significant reduction in external inhomogeneity using a double-layer graphene architecture separated by an ultra-thin hexagonal boron nitride layer. Mutual screening between the layers reduces scattering from random Coulomb potentials, resulting in a quantum mobility exceeding. Shubnikov de-Haas oscillations emerge at magnetic fields below 1 mT, while integer quantum Hall features are observed at 0.002T. Furthermore, we identify a fractional quantum Hall plateau at a filling factor of at 2T. These results demonstrate the platform's suitability for investigating strongly correlated electronic phases in graphene-based heterostructures.
We propose that the localization length in an isolated, ideally flat Chern band is set by quantum geometry. We explore the corresponding localization transition and its critical scaling by applying transfer matrix calculations in the maximally localized hybrid Wannier basis, whose spatial spread is exactly characterized by a quantum geometric length. Remarkably, upon tuning the quantum metric of the Chern band, we observe a crossover from a universal regime controlled by the Dirac fixed point to a non-universal regime with continuously varying critical exponents. Within the universal regime, the localization length exhibits a pronounced linear dependence on the quantum geometric length, supporting its quantum geometric nature. These findings provide a novel quantum geometric perspective on the localization in quantum Hall systems such as twisted moiré superlattices, and shed new light on the long-standing controversy over the criticality of the integer quantum Hall transition.
We study the influence of short-range electron-electron interactions on scaling behavior near the integer quantum Hall plateau transitions. Short-range interactions are known to be irrelevant at the renormalization group fixed point which represents the transition in the noninteracting system. We find, nevertheless, that transport properties change discontinuously when interactions are introduced. Most importantly, in the thermodynamic limit the conductivity at finite temperature is zero without interactions, but nonzero in the presence of arbitrarily weak interactions. In addition, scaling as a function of frequency $\ensuremath{\omega}$ and temperature T is determined by the scaling variable $\ensuremath{\omega}{/T}^{p}$ (where p is the exponent for the temperature dependence of the inelastic scattering rate) and not by $\ensuremath{\omega}/T,$ as it would be at a conventional quantum phase transition described by an interacting fixed point. We express the inelastic exponent p and the thermal exponent zT{z}_{T}zT​ in terms of the scaling dimension $\ensuremath{-}\ensuremath{\alpha}<0$ of the interaction strength and the dynamical exponent z (which has the value z=2),z=2),z=2), obtaining $p=1+2\ensuremath{\alpha}/z$ and zT=2/p.{z}_{T}=2/p.zT​=2/p.
Two-dimensional van der Waals materials offer a highly tunable platform for engineering electronic band structures and interactions. By employing techniques such as twisting, gating, or applying pressure, these systems enable precise control over the electronic excitation spectrum. In moir\'e bilayer graphene, the tunability facilitates the transition from a symmetric Dirac semimetal phase through a quantum critical point into an interaction-induced long-range ordered phase with a finite band gap. At charge neutrality, the ordered state proposed to emerge from twist-angle tuning is the Kramers intervalley-coherent insulator. In this case, the transition falls into the quantum universality class of the relativistic Gross-Neveu-XY model in 2+12+12+1 dimensions. Here, we refine estimates for the critical exponents characterizing this universality class using an expansion around the lower critical space-time dimension of two. We compute the order-parameter anomalous dimension ${\ensuremath{\eta}}_{\ensuremath{\varphi}}$ and the correlation-length exponent $\ensuremath{\nu}$ at one-loop order, and the fermion anomalous dimension ${\ensuremath{\eta}}_{\ensuremath{\psi}}$ at two-loop order. Combining these results with previous findings from the expansion around the upper critical dimension, we obtain improved estimates for the universal exponents in 2+12+12+1 dimensions via Pad\'e interpolation. For Nf=4{N}_{\text{f}}=4Nf​=4 four-component Dirac fermions, relevant to moir\'e bilayer graphene, we estimate $1/\ensuremath{\nu}=0.916(5), {\ensuremath{\eta}}_{\ensuremath{\varphi}}=0.926(13)$, and ${\ensuremath{\eta}}_{\ensuremath{\psi}}=0.0404(13)$. For Nf=2{N}_{\text{f}}=2Nf​=2, potentially relevant to recent tetralayer WSe2{\mathrm{WSe}}_{2}WSe2​ experiments, the Gross-Neveu-XY fixed point may be unstable owing to a fixed-point collision at Nf,c{N}_{\text{f,c}}Nf,c​, with ${N}_{\text{f,c}}=1+\sqrt{2}+\mathcal{O}(\ensuremath{\epsilon})$ in the expansion around the lower critical dimension.
The many-body correlation between electrons is the origin of many fascinating phenomena in condensed matter systems, such as high temperature superconductivity, superfluidity, fractional quantum Hall effect, and Mott insulator. Strongly correlated systems have been an important subject of condensed matter physics for several decades, especially after the discovery of high temperature cuprate superconductors. In this thesis, we apply first principles quantum Monte Carlo (QMC) method to several representative systems to study the electron correlations in transition metal oxides (vanadium dioxide) and low dimensional electronic systems (graphene and graphene-like two dimensional systems). Vanadium dioxide (VO2) is a paradigmatic example of a strongly correlated system that undergoes a metal-insulator transition at a structural phase transition. To date, this transition has necessitated significant post-hoc adjustments to theory in order to be described properly. We apply first principles quantum Monte Carlo (QMC) to study the structural dependence of the properties of VO2. Using this technique, we simulate the interactions between electrons explicitly, which allows for the metal-insulator transition to naturally emerge, importantly without ad-hoc adjustments. The QMC calculations show that the structural transition directly causes the metal-insulator transition and a change in the coupling of vanadium spins. This change in the spin coupling results in a prediction of a momentum-independent magnetic excitation in the insulating state. While two-body correlations are important to set the stage for this transition, they do not change significantly when VO2 becomes an insulator. These results show that it is now possible to account for electron correlations in a quantitatively accurate way that is also specific to materials. Electron correlation in graphene is unique because of the interplay of the Dirac cone dispersion of pi electrons with long range Coulomb interaction. The random phase approximation predicts no metallic screening at long distances and low energies because of the zero density of states at Fermi level. It is thus interesting to see how screening takes place in graphene at different length scales. We addressed this problem by computing the structure factor S(q) and S(q, ω) of freestanding graphene using ab initio fixed-node diffusion Monte Carlo and the random phase approximation. The X-ray measured structure factor is reproduced very accurately using both techniques, provided that sigma-bonding electrons are included in the simulations. Strong dielectric screening from sigma electrons are observed, which redshifts the pi plasmons resonance frequency at long distance and reduces the effective interactions between pi electrons at short distance. The short distance screening makes suspended graphene a weakly correlated semimetal which otherwise would be an insulator. The third piece of works is dedicated to studying the low energy excitation of many-body systems using extended Koopmans' theorem (EKT). The EKT provides a straight forward way to compute charge excitation spectra, such as ionization potentials, electron affinities from any level of theory. We implemented the EKT within the QMC framework, and performed systematic benchmark studies of ionization potentials of the second- and third-row atoms, and closed- and open-shell molecules. We also applied it to compute the quasiparticle band structure of solids (graphene). For complex correlated systems, identifying relevant low energy physics degrees of freedom is extremely important to understanding the system's collective behavior at different length scales. In this sense, bridging the realistic systems to lower energy effective lattice models that involve fewer but important degrees of freedom is significant to understanding correlated systems. We have formulated three ab initio density matrix based downfolding (AIDMD) methods to downfold the ab initio systems into effective lattice models. We have demonstrated the successfulness of these methods by applying them to molecules (H2) and periodic systems (hydrogen chain and graphene).
After its first isolation by Geim and Novoselov in 2004, graphene has grown quickly into an independent subfield of contemporary condensed matter physics, counting thousands of publications. This material has attracted so much attention not only because it is truly two-dimensional -- a feature long thought to be impossible to be realized in nature -- but also because it is the prime representative of a new class of condensed matter systems, the Dirac materials, whose electronic spectrum disperses linearly around isolated points in the Brillouin zone. An outstanding consequence of this linear energy-momentum dispersion is the collapse of the Fermi surface to isolated points at charge neutrality, accompanied by a vanishing single-particle density of states. While this feature of the noninteracting model is what separates graphene from most other, more conventional condensed matter systems, giving rise to many of its astounding physical properties, it leads to severe computational complications when extending the model to contain two-body interactions and/or disorder. In this thesis we consider both extensions separately. After rigorously deriving the low-energy quantum field theory from a tight-binding model and establishing the one-particle irreducible (1PI) vertex functions as the fundamental building blocks of correlation functions, we construct a nonperturbative formalism for the calculation of these vertex functions using the well-established functional renormalization group (fRG). By combining the fRG with the Keldysh formalism, accounting for possible external electromagnetic fields and nontrivial initial correlations, this framework is capable of handling thermal equilibrium and true nonequilibrium alike. To circumvent some of the technical problems of the standard fRG formalism when treating fermionic systems at finite density, we also explore a variant of the fRG, where the chemical potential is interpreted as a flow parameter. We obtain hierarchical sets of flow equations, which describe the change of the 1PI vertex functions upon varying an artificial cutoff scale or the chemical potential, respectively. These nonperturbative formalisms have been used to calculate the renormalization of the Fermi velocity and the static dielectric function at finite temperature and density in the strong coupling regime as an explicit demonstration of their capabilities. Since the Keldysh fRG is an exact formulation of quantum field theory, in particular when external magnetic fields are present, it should be possible to describe the fractional quantum Hall effect in this framework. However, the typical truncation schemes that are currently available to approximately solve the fRG flow equation fail to account for the nontrivial correlation effects necessary to access the fractional quantum Hall regime. To circumvent this problem we consider a modified field theory, where these correlations are implemented ``by hand'' via a Chern-Simons gauge field, coupling to the fermions in addition to the Coulomb interaction term. This modified field theory is analyzed in a stationary phase approximation including Gaussian fluctuations. The electromagnetic response tensor is calculated in the random phase approximation, yielding the Hall conductivities. In the second part of this thesis we consider disordered Dirac fermions in the absence of two-particle interactions. After sketching how the most general disorder potential for Dirac fermions arises from a tight-binding model, we first consider an explicit physical scenario, a disordered graphene pn junction in the presence of a quantizing magnetic field perpendicular to the graphene sheet. We derive an effective one-dimensional theory for the chiral states that propagate along the junction interface and calculate the full conductance distribution in the crossover between the clean and the strong-disorder limit, via an exact solution of a Fokker-Planck equation. Lastly, we develop a nonperturbative approach to calculate the disorder induced self-energy that is based on exact Schwinger-Dyson equations and Ward identities, not only for graphene, but also for other paradigmatic semimetals with a nodal point dispersion.