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arXiv:2601.16015

Quantum Hall Effect at 0.002T

Alexander S. Mayorov, Ping Wang, Xiaokai Yue, Biao Wu, Jianhong He, Di Zhang, Fuzhuo Lian, Siqi Jiang, Jiabei Huang, Zihao Wang, Qian Guo, Kenji Watanabe, Takashi Taniguchi, Renjun Du, Rui Wang, Baigeng Wang, Lei Wang, Kostya S. Novoselov, Geliang Yu

cond-mat.mes-hallquant-phSubmitted Jan 22, 2026• Announced Jan 23, 2026
arXivHTMLPDF

Abstract

Graphene enables precise carrier-density control via gating, making it an ideal platform for studying electronic interactions. However, sample inhomogeneities often limit access to the low-density regimes where these interactions dominate. Enhancing carrier mobility is therefore crucial for exploring fundamental properties and developing device applications. Here, we demonstrate a significant reduction in external inhomogeneity using a double-layer graphene architecture separated by an ultra-thin hexagonal boron nitride layer. Mutual screening between the layers reduces scattering from random Coulomb potentials, resulting in a quantum mobility exceeding. Shubnikov de-Haas oscillations emerge at magnetic fields below 1 mT, while integer quantum Hall features are observed at 0.002T. Furthermore, we identify a fractional quantum Hall plateau at a filling factor of at 2T. These results demonstrate the platform's suitability for investigating strongly correlated electronic phases in graphene-based heterostructures.

DOI
10.1038/s41467-026-68695-8

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Graphene enables precise carrier-density control via gating, making it an ideal platform for studying electronic interactions. However, sample inhomogeneities often limit access to the low-density regimes where these interactions dominate. Enhancing carrier mobility is therefore crucial for exploring fundamental properties and developing device applications. Here, we demonstrate a significant reduction in external inhomogeneity using a double-layer graphene architecture separated by an ultra-thin hexagonal boron nitride layer. Mutual screening between the layers reduces scattering from random Coulomb potentials, resulting in a quantum mobility exceeding. Shubnikov de-Haas oscillations emerge at magnetic fields below 1 mT, while integer quantum Hall features are observed at 0.002T. Furthermore, we identify a fractional quantum Hall plateau at a filling factor of at 2T. These results demonstrate the platform's suitability for investigating strongly correlated electronic phases in graphene-based heterostructures.
Recent experiments in monolayer and trilayer graphene have observed incompressible even-denominator fractional quantum Hall states within narrow regions of parameter space associated with crossings of zeroth Landau levels. This is surprising because at half filling the Coulomb interaction in the zeroth Landau level is expected to favour a compressible composite Fermi liquid. Here we provide the first quantitative energetic study of the candidate incompressible phases and of the microscopic mechanisms that can stabilise them near such Landau-level crossings. Using exact diagonalization and infinite density-matrix renormalisation group, we first study ultra-short-range corrections to the Coulomb interaction arising from finite layer separation, lattice-scale effects, and electron-phonon coupling. We find that a sufficiently strong attractive short-range interaction drives the composite Fermi liquid first into a weakly paired ddd-wave pseudospin-singlet state and subsequently into a strongly paired state. However, microscopic estimates of these short-range corrections are far too small to stabilise either incompressible phase. We then incorporate Landau-level mixing through screening within the random-phase approximation. Screening substantially reshapes the effective interaction, suppresses the weak-pairing regime, and strongly enhances the tendency toward strong pairing. For a realistic range of microscopic parameters, the strongly paired phase is stabilised over a substantial fraction of that range. Our results identify the interplay of Landau-level mixing and ultra-short-range interactions as a plausible microscopic mechanism for the experimentally observed incompressible states in monolayer and trilayer graphene and point toward a strongly paired composite-fermion phase as their candidate ground state.
Single-layer and Bilayer of graphene are new classes of two-dimensional electron systems with unconventional band structures and valley degrees of freedom. The ground states and excitations in the integer and fractional quantum Hall regimes are investigated on torus and spherical geometries with the use of the density matrix renormalization group (DMRG) method. At nonzero Landau level indices, the ground states at effective filling factors 1, 1/3, 2/3 and 2/5 are valley polarized both in single-layer and bilayer graphenes. We examine the elementary charge excitations which could couple with the valley degrees of freedom (so called valley skyrmions). The excitation gaps are calculated and extrapolated to the thermodynamic limit. The largest excitation gap at effective filling 1/3 is obtained in bilayer graphene, which is a good candidate for experimental observation of fractional quantum Hall effect.
At continuous electronic phase transitions, Coulomb interactions can modify the relation between length, energy, and temperature, but experimentally disentangling their effects on spatial versus dynamical criticality has remained difficult, since finite-temperature scaling alone measures only the combined exponent κ=1/(zγ)κ= 1/(zγ)κ=1/(zγ). Here, we introduce two advances that resolve this limitation. First, by combining temperature scaling with independent current scaling, we separately extract the dynamical exponent zzz and the localization-length exponent γγγ at the quantum Hall plateau transition -- rather than inferring one from an assumed value of the other. Second, using dual-graphite-gated graphene devices in which the effective Coulomb interaction range is tuned geometrically by the ratio of the magnetic length lBl_BlB​ to the graphite-gate distance ddd, we track this separation across both screened and unscreened interaction regimes within the same device platform. Temperature scaling gives κ≃0.21κ\simeq 0.21κ≃0.21 in the screened regime and κ≃0.41κ\simeq 0.41κ≃0.41 in the unscreened regime; combining this with current scaling reveals that screening changes zzz from ≃1\simeq 1≃1 in the unscreened regime to ≃2\simeq 2≃2 in the screened regime. In contrast, γγγ remains close to 2.42.42.4 throughout. Our results establish that gate-controlled screening selectively modifies the interaction-dependent dynamical sector of the quantum Hall transition, leaving the localization-length exponent γγγ unchanged within experimental uncertainty. More broadly, this work establishes geometric screening as a versatile tool for controlling interactions and disentangling interaction and disorder effects in correlated two-dimensional systems, including fractional quantum Hall states, moiré materials, and other strongly localized electronic phases.
Fibonacci anyons provide a universal platform for topological quantum computation, and emerge as low-energy excitations in the Z3\mathbb{Z}_3Z3​ Read-Rezayi phase in the fractional quantum Hall effect. However, realistic microscopic realizations of this phase in the absence of a magnetic field have remained elusive. We study a model of periodically modulated Bernal bilayer graphene with gate-screened Coulomb interactions. Using the recently developed target-phase optimization method in conjunction with band-projected exact diagonalization, we identify at filling ν=3/5ν=3/5ν=3/5 a region of parameter space whose ground state is consistent with a Read-Rezayi fractional Chern insulator. The partially filled band from which it arises is a part of a two-band complex which mimics geometric aspects of the lowest and first Landau levels, with the ground state at ν=1/2ν=1/2ν=1/2 consistent with the Moore-Read state. Our results suggest that modulated Bernal graphene can realize delicate non-Abelian fractional quantum Hall states at zero magnetic field, while demonstrating target-phase optimization as a practical route to discovering such phases in realistic, high-dimensional microscopic models.
Quantum Hall systems have a one-body energy spectrum consisting of dispersion-less Landau levels. Electron-electron interactions thus dominate in partially filled Landau levels, which exhibit a myriad of strongly correlated phases such as quantum hall ferromagnets and fractional quantum Hall phases. We study two examples of these phenomena. In the first project, we explore the ground state of a system with an interface between two semi-infinite regions with fillings ν= 4 and ν= 3 respectively. The width of the interface can be controlled by varying the background potential, which provides an additional tuning parameter. For a certain range of interaction strengths, the ν= 4 bulk is unpolarized whereas the ν= 3 bulk is fully polarized. In the parameter space spanned by the interaction strength and width of the interface, we find two phases at the interface. Phase A has spin as a good quantum number, and the long-wavelength spin edge excitations are gapped. In phase B, spin rotation symmetry is spontaneously broken at the mean-field level. Using symmetry arguments we find the effective theory near the interface of phase B. This effective theory is known to have gapless long-wavelength spin excitations. In the second project, we study the ground state of a tunnel-decoupled double-layer graphene system when both layers are undoped. We find a simple Hamiltonian in the continuum limit from symmetries of the system. Using the Hartree-Fock approximation we find a state with inter-layer coherence with broken layer U(1) symmetry. This phase becomes magnetized in presence of a non-zero Zeeman field. A first-order phase transition can be driven from the ferromagnetic phase to the magnetized inter-layer coherent phase by increasing the Zeeman field. We predict the number of gapless modes in the bulk.
The quantum Hall effect observed in a two-dimensional electron gas exposed to a perpendicular magnetic field is one of the most important modern discoveries in condensed matter physics. Advances in technology have allowed both experimental and computer-based theoretical study of miniature-size counterparts of conventional quantum Hall devices. Due to their versatile tunable electronic and magnetic properties, these systems show great promise for future technological applications. This work investigates two-dimensional semiconductor quantum dots and extended quantum rings in the quantum Hall regime. Besides being interesting on purely theoretical grounds as experimentally reachable extreme quantum-mechanical interacting many-body systems, the systems considered have major applicational interest in the realm of quantum information processing. Our emphasis lies in the strongly correlated regime where the enhanced electron-electron interactions lead to a computationally hard problem. For the systems with a few electrons, we employ the in principle exact configuration interaction method, which allows accurate study of the effects of the confinement potential and the effective form of the electron-electron interaction. Larger systems are modeled by Monte Carlo and density functional based methods. Moreover, we develop a computational method based on the reduced density-matrix functional theory to study the physics at the strongly correlated fractional quantum Hall regime with large particle numbers. The main results are related to the interplay of electron correlation and magnetism as well as the effects of tuning the electron correlation through sample engineering. The results on magnetism may find applications in future spintronics devices and spin qubits. Meanwhile, the results on electron correlation are relevant for the attempts to utilize fractional quantum Hall states in topologically protected quantum computing.